414 RF TRANSISTOR Search Results

transistor BF 414

Abstract: 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414
Contextual Info: BF 414 NPN Silicon RF Transistor ● BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 – Q62702-F517 Pin Configuration 1 2 3 C B Package1 TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

transistor BF 414

Contextual Info: SIEMENS NPN Silicon RF Transistor BF 414 • For low-noise, common base VH F and FM stages Type Marking Ordering Code BF 414 - Q62702-F517 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

BF414

Abstract: transistor BF 414 414 transistor BF 414 marking code B1C TRANSISTOR MARKING CODE "SP" K 414 transistor
Contextual Info: TELEFUNKEN ELECTRONIC Û1 C D • ô'tëO D 'Jt. 0 0 Q5 2 G4 fi 7 BF 414 M electronic TO Creative Technologies Silicon PNP Epitaxial Planar RF Transistor Applications: VHF input stages in common base configuration Features: • Small feedback capacitance • Large signal to intermodulation ratio

MRF181SR1

Contextual Info: Section Two Motorola RF Discrete Transistors – Data Sheets Device Number Page Number Device Number Page Number MRF134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF373 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–258

heat sink design guide, IGBT

Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
Contextual Info: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs

transistor BF 257

Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität

Contextual Info: » w / IjF i Com I¡near ÜLJ Corporation Quad, Low-Power Monolithic Op Amp CLC414 APPLICATIONS: FEATURES typical : • • • • • • • • • • • • • • • com posite video distribution amps H D TV am plifiers R G B-video am plifiers CCD signal processing

BF606

Abstract: BF254 BF414 BF763 BF255 BF450 BF 414 BF979 to-92 type BF979S
Contextual Info: Transistors — bipolar RF tran sisto rs P la stic p acka g e T O 92 NPN PNP = = N Vceo P Figure Characteristics TA = 25°C Maximum ratings Type lc P.O. tore /cBO V^CEaat ft mA Vce V nA V MHz lc leu* V mA mW BF 199 N 25 25 500 85 (> 38) 7 10 <100 - 550 BF 240

PO32

Abstract: 33J6 PH1600
Contextual Info: n/A-con p 2S E o h D • 5^42205 n D G Q S 7b 273 ■ HAP - T-3 3 -H M /A-COM PHI, IN C. 1742 CRENSHAW BLVD, TORRANCE, CALIFORNIA 9 0 5 0 1 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 A # A > M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR

MRF1375

Contextual Info: MOTOROLA Order this document by MRF1375/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TACAN and DME. • Guaranteed Performance @ 1090 MHz

npn 222

Abstract: 251bf "AGC Amplifier" AM "AGC Amplifier" AM FM radio AM/FM bf 233 BF222 agc amplifier F VHF amplifier
Contextual Info: CONSUMER TRANSISTORS continued o Q. > i> 0 CL Li] CD >~ < O ÜJ ÜJ JE > > U. o _c s> 0) > X o L» CM II I- rsi X ¡2 ro 1- P A CKAG E cc < NF (dB) h PG (dB) > DESCRIPTIO N TYPE RF amplifiers-mixer/oscillators 3 _E □ o_ 800 200 600 TO-72 6.5 800 175 550 TO-72

BVC71

Abstract: BCV71R BCV71 BCV72 BCV72R DS42 S0T23 ctc4
Contextual Info: BCV71 BCV72 S0T 23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR PA RT M A RKIN G DETAILS:BVC71 - K7 BCV72 - K8 BCV 71R - K6 BCV 72R - K9 ABSOLUTE M A X IM U M RATINGS PARAM ETER SYM BO L VALUE U N IT Collector-Base Voltage V CBO 80 V Collector-Em itter Voltage

Contextual Info: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT L-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over

gsm 900 amplifier

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9080 MRF9080S N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common–

BFR92

Abstract: BFR92A P1 BFR92A b41 Marking BFR92A Transistor BFR92 transistor
Contextual Info: / = T SGS-THOMSON ^ 7 # MOrami@ra M©t BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR Type Marking BFR92 P1 BFR92A P2 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GOLD METALLIZED TRANSISTOR FOR

cl 740

Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
Contextual Info: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES

2SB546

Abstract: 2SB541 2SB542 138B 2SB544 2SB547 2SD386
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

n channel MOSFET 45 w 10 v

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

transistor K 1413

Abstract: D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110
Contextual Info: .I TELEFUNKEN ELECTRONIC 17E D • ÛTSOCHb o o o i m i BF 469Ö BF 471 S ‘¡nUilPMKIKi electronic Creaiiv* techootojK» T * 3 2 -O S “ Silicon NPN Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 469 S complementary to BF470S

ELTEC INSTRUMENTS

Contextual Info: 414 Series Opposed Dual Pyroelectric IR Detector with Source Follower E LH T E C Manufactured under one or more of the following US patents 3,839.640 - 4.218,620 - 4.326,663 - 4,384207 - 4,437,003 4,441,023 - 4.523,095 .040 SPACING r T 1.0 ELEMENT T.O080

BF441

Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62
Contextual Info: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5

Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with

Transistors BF 324

Abstract: AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233
Contextual Info: CONSUMER TRANSISTORS IF amplifiers @ o o m LU U ai > > and @ ÍD < < O < E I- C3 CL Q_ @ □ a . BF 158 NPN IF a m p lifie r fo r T V BF 160 NPN IF a m p lifie r fo r AM -FM radio 12 12 BF 167 NPN AG C-l F a m p lifie r fo r T V 30 BF 173 NPN IF vision am p-output stage

Contextual Info: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!