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KEMET Corporation SMR5474J50J04L16.5CBULK Film Capacitors 0.47uF 50V 5%
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KEMET Corporation SMR15475J50B14L16.5CBULK Film Capacitors 4.7uF 50V 5%
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Mouser Electronics	SMR15475J50B14L16.5CBULK					1 - 10 - 100 - 1000 - 10000 $9.31	Get Quote

416 J50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TEA4263 Abstract: Troubleshooting varistor 4263B 2110-0202 Contextual Info: Agilent 4263B LCR Meter Service Manual SERIAL NUMBERS This manual applies directly to instruments with serial number pre x JP1KD. For additional important information about serial numbers, read \Instruments Covered by This Manual" in Chapter 1 of this manual.	Original	4263B TEA4263 Troubleshooting varistor 2110-0202	PDF
2SC3606 Abstract: c3c3 transistor Contextual Info: TOSHIBA 2SC3606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3606 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. + 0 .5 2 . 5 - 0 .3 • Low Noise Figure, High Gain. . NF = l.ld B , \|S 2lel 2—lld B f=lG H z M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SC3606 SC-59 -j250 /-jl50 2SC3606 c3c3 transistor	PDF
Contextual Info: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for	Original	FLC317MG-4 FLC317MG-4 FCSI0598M200	PDF
FLC317MG-4 Contextual Info: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for	Original	FLC317MG-4 FLC317MG-4 FCSI0598M200	PDF
Contextual Info: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for	Original	FLC317MG-4 FLC317MG-4	PDF
FLC317MG-4 Contextual Info: FLC317MG-4 C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC317MG-4 is a power GaAs FET that is designed for	Original	FLC317MG-4 FLC317MG-4	PDF
FLM7785-18F Contextual Info: FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7785-18F -45dBc FLM7785-18F FCSI0500M200	PDF
417-116 Abstract: FLM5964-6F Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5964-6F -46dBc FLM5964-6F FCSI0598M200 417-116	PDF
Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50W	Original	FLM5359-25F -46dBc FLM5359-25F FCSI0499M200	PDF
FLM5359-25F Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5359-25F -46dBc FLM5359-25F FCSI0499M200	PDF
Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W	Original	FLM5964-6F -46dBc FLM5964-6F FCSI0598M200	PDF
417-116 Abstract: FLM5964-6F 26dBm Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5964-6F -46dBc FLM5964-6F 417-116 26dBm	PDF
Contextual Info: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50W	Original	FLM5972-8F -45dBc FLM5972-8F FCSI0599M200	PDF
FLM5359-25F Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5359-25F -46dBc FLM5359-25F Powe4888	PDF

FLM5359-25F Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5359-25F -46dBc FLM5359-25F Pow4888	PDF
FLM5964-6F Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5964-6F -46dBc FLM5964-6F	PDF
FLM5972-8F Contextual Info: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5972-8F -45dBc FLM5972-8F FCSI0599M200	PDF
FLM7785-18F Contextual Info: FLM7785-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 42.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM7785-18F -45dBc FLM7785-18F	PDF
Tamagawa TS-2014N181E32 Abstract: tamagawa power flex 700 vfd motor wiring diagram Allen-Bradley VFD Powerflex 700S TS-2014N182E32 20-HIM-C3 tamagawa ts ts2087n1e9 TS-2014N181E32 1321-3R130-B Contextual Info: Technical Data Phase I Control PowerFlex 700S High Performance AC Drive 2 PowerFlex 700S AC Drives Technical Data — Phase I Control The Allen-Bradley PowerFlex® 700S AC drive, a version of PowerFlex 700 power platform, offers high performance drive control, advanced features and more	Original	20D-TD001G-EN-P 20D-TD001F-EN-P Tamagawa TS-2014N181E32 tamagawa power flex 700 vfd motor wiring diagram Allen-Bradley VFD Powerflex 700S TS-2014N182E32 20-HIM-C3 tamagawa ts ts2087n1e9 TS-2014N181E32 1321-3R130-B	PDF
Contextual Info: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5972-8F -45dBc FLM5972-8F	PDF
17800 Contextual Info: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω	Original	FMM5805GJ-1 FMM5805GJ-1 FCSI0301M200 17800	PDF
FMM5805 Contextual Info: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω	Original	FMM5805GJ-1 FMM5805GJ-1 FCSI0500M200 FMM5805	PDF
FLM5972-8F Contextual Info: FLM5972-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 31% (Typ.) Low IM3 = -45dBc@Po = 28.0dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5972-8F -45dBc FLM5972-8F	PDF
17800 Abstract: FMM5805GJ-1 Contextual Info: FMM5805GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • High Output Power: P1dB = 31.0dBm Typ. • High Gain: G1dB = 20.0dB(Typ.) • High PAE: ηadd = 27% (Typ.) • Low In/Out VSWR • Broad Band: 17.7 ~ 19.7GHz • Impedance Matched Zin/Zout = 50Ω	Original	FMM5805GJ-1 FMM5805GJ-1 17800	PDF

416 J50 Search Results

416 J50 Price and Stock

KEMET Corporation SMR5474J50J04L16.5CBULK

KEMET Corporation SMR15475J50B14L16.5CBULK

416 J50 Datasheets Context Search

TEA4263

2SC3606

FLC317MG-4

FLC317MG-4

FLM7785-18F

417-116

FLM5359-25F

417-116

FLM5359-25F

FLM5359-25F

FLM5964-6F

FLM5972-8F

FLM7785-18F

Tamagawa TS-2014N181E32

17800

FMM5805

FLM5972-8F

17800