4164-2 RAM Search Results

IC 4164

Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Contextual Info: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability

4164 ram

Abstract: HYB4164 4164-2 RAM HYB4164-P2 4164 4164 dynamic ram siemens hyb4164 4164-2 RAM 4164 HYB4164-1
Contextual Info: SIEM ENS HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 b it organization • • A ll inputs and outputs TTL com patible • High over- and undershooting capability on all inputs • Low supply current transients

4164 ram

Abstract: 4164 dynamic ram RAM 4164 4Q709 4164 4164 (RAM)
Contextual Info: TEXAS IN STR { A S I C / M E M O R Y J- 7 7 Ö961725 TEXAS INSTR CASIC/MEMORY D E| 8^1755 D 04 G 7D t , 77C 4 0 7 0 6 3 D TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1986 6 5 ,5 3 6 X 9 Organization TM 4164EL9 . . . L SINGLE-IN-UNE PACKAGE*

LM 4138

Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
Contextual Info: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,

4164 ram

Abstract: IC 4164 DYNAMIC RAM 65536 TEXAS tms4164 RAM 4164 4164 (RAM)
Contextual Info: TEXAS INSTR -CASIC/flEMORY} 77 DE§ 0Tbl7SS 0040737 3 0 9 6 1 7 2 5 TEXAS INSTR <ASIC/MEMORY T7C 4 0 7 3 7 TM4164FL8, TM4164FM8 65.536 BY 8-BIT DYNAMIC RAM MODULES NOVEMBER 1983 - REVISED NOVEMBER 1985 TM 4164FL8 . TM 4164FM 8 6 5,5 36 X 8 Organization Single 5-V Supply 10% Tolerance)

4164-12

Abstract: NEC 4164 PD4164 4164-10 LPD416
Contextual Info: NEC |jl,PD4164 6 5,536 x 1-BIT DYNAMIC NMOS RAM NEC Electronics Inc. Revision 4 Description Pin Configuration The N EC J.PD4164 is a 65,536-word by 1-bit dynamic N-channel MOS R andom -access M em ory (RAM designed to operate from a single + 5V power supply. The negativevoltage substrate bias is internally generated providing both

PEB 4165 T

Abstract: AC GENERATOR PEB 3465 V1.2 PEB 3465 PEB 4166 T
Contextual Info: A pplic ation N ote, D S2, Jan. 2001 MuSLIC Multichannel Subscriber Line Interface Concept PEB 3465 V 1.2 PEB 31666/31665/31664 V1.3 PEB 4166/4165/4164 V2.3 Coefficient Handling of MuSLIC Chipset Wired Communications N e v e r s t o p t h i n k i n g . Edition 2001-01-15

Contextual Info: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164E L9 . . . L SINGLE-IN-LINE PACKAGEf T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5-V Supply 10% Tolerance (TOP VIEW)

dram 4164

Abstract: 74670 register 41256
Contextual Info: UNITED MICROELECTRONICS 30E D • q3a5fl5a 00001 51 T ■ T ~ 5 ^ - 3 3 -òS UM82C088 PC/X T Integration Chip Features ■ Fully IBM-PC/XT compatible ■ 82C84 Clock generator with 2 clock-inputs to generate the CPU clock. These are 14.318 MHz and 30 MHz which will support 4.77 MHz and 10 MHz CPU clocks

AN-3004

Abstract: valve control example l1.2 Multivibrator 555
Contextual Info: BACK AN3004 sames AN3004 APPLICATION NOTE SA9202 PORT EXPANDER The SA9202 family of port expanders may be used in a variety of applications in industries ranging from agricultural to food processing or telecommunications. This application note describes how the SA9202 could be applied in a typical industrial control system.

information applikation

Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Contextual Info: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond

lm3364

Abstract: M5K4164NP-15 LM3364-15 LM3364-20 AM9064-15 M5K4164NS-15 IMS2600-15 A9064 C2164-15 M5K4164NP-20
Contextual Info: - 168 - X m % tt £ CC TRAC max ns) 6 4 K nMOS D y n a m i c + y :7' ft 'ft 'f (ns) TCAD rain (ns) TRCY TAH min (ns) TP nil) (ns) TWCY min (ns) TDH rain (ns) RAM (6 5 5 3 6 x 1 ) £ TRWC min (ns) V D D or V C C (V) A M I DD max <mA) I D D STANDBY (ISB/ISB2)

sense amplifier bitline memory device

Abstract: F4164 F4164-1 F4164-2 F4164-3
Contextual Info: F 4164 6 5 ,5 3 6 x 1 Dynamic RAM MOS Memory Products Logic Symbol Description The F4 1 6 4 is a dynamic Random A c c e s s Memory RAM circuit organized a s 6 5 ,5 3 6 single-bit words. This memory u ses the Fairchild advanced double poly NMOS, Isoplanar-H p ro cess which allows

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS8256P8 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS8256P8-25, -35, -45, -55 is a high speed 256K x 8 Static Random Access M em o ry SRAM m o d u le constructed on an ep oxy lam inate substrate using eight 256K x 1 C M O S RAM 's in plastic surface

PEB3465

Abstract: PEB 4165 T PEB31665 dcnc PEB 4166 T P-MQFP-80-1 smd marking KH PEB31664 PEB31666 PEB4164
Contextual Info: Dat a Sh eet , DS1 , Ju ly 20 00 QAP Q u a d A n a lo g P O TS PEB 3465 Version 1.2 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000-07-14 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

4164 ram

Abstract: lh521008
Contextual Info: CMOS 128K x 8 Static RAM FEATURES • Fast Access Times: 20/25/35 ns • JEDEC Standard Pinout • High Density 32-Pin, 400-mil SOJ Package • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • 2 V Data Retention

smd diode marking LM

Abstract: 4166 ic equivalent PEB 4165 T ntp 3000 HIGHWAY drv 801 ic MVAM-1 PEB 4166 T PEB31666 PEB3465 PEB4164
Contextual Info: Pr el imi nar y Dat a Sh eet , DS1 , Ju ly 20 00 MuSLIC M u l t i c h a n n e l S u b s c r i b e r L in e Interface Concept PEB 3465 Version 1.2 PEB 31666/31664 Version 1.3 PEB 4166/4164 Version 2.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g .

150TYP

Contextual Info: DS2257, DS 2257S DALLAS SEMICONDUCTOR DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design A12 C C A7 Z A14 • Standby current 400 nA max at 500 nA max at 4 jiA max at 10 nA max at tA = 25°C tA = 25°C tA = 60°C

Contextual Info: DS 2257, DS 2257S PA LLA S SEMICONDUCTOR DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • Standby current 400 nA max at 500 nA max at 4 jiA max at 10 nA max at t* = 25°C tA = 25°C ìa = 60°C t* = 85°C

PEB 4165 T

Abstract: 4166 ic equivalent SPT170 PEB31664 PEB31666 PEB4164 P-MQFP-64-1 PEB 4166 T
Contextual Info: Pr eli mi nar y Dat a Sh eet , DS1 , No v. 20 00 MuPP µC Multichannel Processor for POTS PEB 31666 Version 1.3 PEB 31664 Version 1.3 W ir e d C o m m u n i c a t io n N e v e r s t o p t h i n k i n g . Edition 2000-11-06 Published by Infineon Technologies AG,

Contextual Info: DS2257, DS2257S DALLAS SEMICONDUCTOR CORP DALLAS SEMICONDUCTOR SO E D 2bl4130 1 DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • • Standby current 400 nA max at 500 nA max at 4 jiA max at lOjiAmaxat 00047TD

DDA 003A

Abstract: DS2257 DS2257-70 DS2257S DS2257S-70
Contextual Info: DS2257, DS2257S DA LL AS S E M I C O N D U C T O R CORP DALLAS SEMICONDUCTOR SOE D 2bl4130 00047^0 1 DS2257, DS2257S 32K x 8 3V Operation Static RAM PIN ASSIGNMENT FEATURES • Low power CMOS design • • Standby current 400 nA max at 500 nA max at 4 jiA max at

TMS4164A

Abstract: TM41 TM4164 TMS4416 RAM 4164 TM41 diode TM4164EL9 pj 889 diode
Contextual Info: TM4164EL9, TM4164FM9 65,536 BY 9-BIT DYNAMIC RAM MODULES NOVEMBER 1 9 8 3 - 6 5 ,5 3 6 X 9 Organization REVISED NOVEMBER 1 9 8 5 TM 4164EL9 . . . L SINGLE-IN-LINE PACKAGE* T M 4164 F M 9 . . . M SINGLE-IN-LINE PACKAGE Single 5 -V Supply 1 0 % Tolerance (TOP VIEW)

5K4164ANP-20

Contextual Info: MITSUBISHI LSIs M 5K4164ANP-20 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD B Y 1-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T his is a fa m ily o f 65536-word b y 1-bit d y n a m ic R A M s , fab ricate d w ith the high p erform ance N-channel silicongate