430MA Search Results
430MA Result Highlights (1)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LQW18CNR65J0HD | Murata Manufacturing Co Ltd | Fixed IND 650nH 430mA POWRTRN |
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430MA Price and Stock
Littelfuse Inc V430MA7BVARISTOR 430V 100A SOD83A AXIAL |
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V430MA7B | Bulk | 4,206 | 1 |
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V430MA7B | 1,340 |
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V430MA7B | Bulk | 652 | 1 |
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V430MA7B | Bulk | 1,500 |
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V430MA7B | Bulk | 2,325 | 25 |
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V430MA7B | 1,500 |
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V430MA7B | 3,260 |
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V430MA7B | 20 |
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V430MA7B | 1,500 |
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Texas Instruments LMQ66430MA5RXBRQ1IC REG BUCK ADJ/1V 3A 14VQFN |
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LMQ66430MA5RXBRQ1 | Digi-Reel | 2,970 | 1 |
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LMQ66430MA5RXBRQ1 | 2,976 |
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Texas Instruments LMQ66430MA3RXBRQ1IC REG BUCK ADJ/1V 3A 14VQFN |
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LMQ66430MA3RXBRQ1 | Cut Tape | 2,959 | 1 |
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LMQ66430MA3RXBRQ1 | 2,875 |
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Littelfuse Inc V430MA3AVARISTOR 430V 100A SOD83A AXIAL |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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V430MA3A | Bulk | 201 | 1 |
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V430MA3A | 1,230 |
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V430MA3A | Bulk | 1,500 |
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V430MA3A | 1,500 |
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Belden Inc FM4MMB1430MAMDEFMT OM4 MPO12(M-M) B 12F 430M |
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FM4MMB1430MAMDE | Bulk | 1 |
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430MA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LT1946 1.2MHz Boost DC/DC Converter with 1.5A Switch and Soft-Start FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LT 1946 is a fixed frequency step-up DC/DC converter containing an internal 1.5A, 36V switch. Capable of generating 8V at 430mA from a 3.3V input, the LT1946 is ideal |
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LT1946 430mA LT1946 300mA LT1944/LT1944-1 350mA LT1945 250mA LT1946A | |
ERJ3EKF0R00V
Abstract: SC792 BZV55C6V2 PMBT4401
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CRD1680-7W CRD1680-7W CS1680 430mA 12VAC/VDC, CRD1680-7W-Z EN55022 30MHz ERJ3EKF0R00V SC792 BZV55C6V2 PMBT4401 | |
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series AQ1055N1S-T Features Item Summary 5.1nH(-0.3nH to +0.3nH), 430mA, 8, 0402 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
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AQ1055N1S-T 430mA, 10000pcs 100MHz 175mm 430mA 560mA 4000MHz | |
Contextual Info: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance |
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DMN62D0SFD 430mA 540mA AEC-Q101 DS35473 | |
Contextual Info: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA N EW PRODU CT V(BR)DSS • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance |
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DMN62D0SFD 540mA 430mA AEC-Q101 DS35473 | |
Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) max • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
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DMP2004K -430mA -150mA DS30933 | |
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N1B-E Features Item Summary 1.1nH(-0.1nH to +0.1nH), 430mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
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HKQ04021N1B-E 430mA, 40000pcs 500MHz 430mA 10000MHz | |
Contextual Info: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance |
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DMN62D0SFD 430mA 540mA AEC-Q101 DS35473 | |
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors for Signal Lines LB series M type / LE series M type LEM2520TR22K Features Item Summary 0.22 H(±10%), 430mA, 1008 Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table |
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LEM2520TR22K 430mA, 2000pcs 430mA 450MHz 30min | |
LTUG
Abstract: mse8 CDRH5D18-4R1 CDRH5D28-5R3 LT1946 LT1946EMS8 LT1946EMS8E RLF5018T-4R7M1R4 UPS120
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LT1946 430mA LT1946 300mA LT1944/LT1944-1 350mA LT1945 250mA LT1946A LTUG mse8 CDRH5D18-4R1 CDRH5D28-5R3 LT1946EMS8 LT1946EMS8E RLF5018T-4R7M1R4 UPS120 | |
DMP2004K-7Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • ID RDS(on) max TA = 25°C 0.9Ω @ VGS = -4.5V -430mA 2.0Ω @ VGS = -1.8V -150mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
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DMP2004K -430mA -150mA AEC-Q101 DS30933 621-DMP2004K-7 DMP2004K-7 DMP2004K-7 | |
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N2B-T Features Item Summary 1.2nH(-0.1nH to +0.1nH), 430mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
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HKQ04021N2B-T 430mA, 20000pcs 500MHz 430mA 10000MHz | |
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N2B-E Features Item Summary 1.2nH(-0.1nH to +0.1nH), 430mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
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HKQ04021N2B-E 430mA, 40000pcs 500MHz 430mA 10000MHz | |
Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBC2012T2R2M Features Item Summary 2.2 H(±20%), 430mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions |
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LBC2012T2R2M 430mA, 3000pcs 96MHz 430mA 70MHz | |
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LTUG
Abstract: mse8 marking ltug linear RLF5018T CDRH5D18-4R1 CDRH5D28-5R3 LT1946 LT1946EMS8 LT1946EMS8E RLF5018T-4R7M1R4
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LT1946 430mA LT1946 300mA LT1944/LT1944-1 350mA LT1945 250mA LT1946A LTUG mse8 marking ltug linear RLF5018T CDRH5D18-4R1 CDRH5D28-5R3 LT1946EMS8 LT1946EMS8E RLF5018T-4R7M1R4 | |
Contextual Info: Spec Sheet INDUCTORS Multilayer Chip Inductors for High Frequency Applications HK series HK06031N5S-T Features Item Summary 1.5nH(-0.3nH to +0.3nH), 430mA, 4, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 15000pcs Products characteristics table |
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HK06031N5S-T 430mA, 15000pcs 100MHz 430mA 10000MHz | |
LTUG
Abstract: marking ltug linear cdrh5d285r3 CDRH5D18-5R4
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LT1946 300mV 430mA LT1613 LT1615 LT1930/LT1930A LT1947 LTUG marking ltug linear cdrh5d285r3 CDRH5D18-5R4 | |
Contextual Info: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance |
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DMN62D0SFD 430mA 540mA AEC-Q101 DS35473 | |
CDRH5D18-4R1
Abstract: CDRH5D28-5R3 LT1946 LT1946EMS8 RLF5018T-4R7M1R4 UPS120 ltug rc coupled amplifier
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LT1946 430mA LT1946 300mA LT1944/LT1944-1 350mA LT1945 250mA LT1946A CDRH5D18-4R1 CDRH5D28-5R3 LT1946EMS8 RLF5018T-4R7M1R4 UPS120 ltug rc coupled amplifier | |
SOT23 PABContextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max Features • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
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DMP2004K -150mA -430mA AEC-Q101 DS30933 SOT23 PAB | |
Contextual Info: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ04021N1B-T Features Item Summary 1.1nH(-0.1nH to +0.1nH), 430mA, 8, 01005 Lifecycle Stage Mass Production Standard packaging quantity (minimum) |
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HKQ04021N1B-T 430mA, 20000pcs 500MHz 430mA 10000MHz | |
CDRH5D18-4R1
Abstract: CDRH5D28-5R3 LT1946 LT1946EMS8 RLF5018T-4R7M1R4 UPS120 LTUG
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LT1946 430mA LT1946 300mA LT1944/LT1944-1 350mA LT1945 250mA LT1946A CDRH5D18-4R1 CDRH5D28-5R3 LT1946EMS8 RLF5018T-4R7M1R4 UPS120 LTUG | |
Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max Package -20V 0.9Ω @ VGS = -4.5V 2.0Ω @ VGS = -1.8V SOT23 ID TA = +25°C -430mA -150mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching |
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DMP2004K -430mA -150mA DS30933 | |
Contextual Info: Spec Sheet INDUCTORS Axial Leaded Inductors LAN02TA1R8J Features Item Summary 1.8 H ±5% , 430mA, 50, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.6(max)x2.4(max)mm |
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LAN02TA1R8J 430mA, 2000pcs 96MHz 50min 140MHz |