431 NPN Search Results

transistor w 431

Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
Contextual Info: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW

h a 431 transistor

Abstract: LH 431 IC 431 1N3913 431 transistors
Contextual Info: CÂ \X y . Series PTC 430, PTC 431 , V- /? % - High Voltage NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators

SLA6023 driver schematic

Abstract: UDN2983A equivalent SMA4033 ULN2068LB STA431A STA458C UDN2580A udn darlington driver ic SLA4031 T02EB0
Contextual Info: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022

SLA6023 driver schematic

Abstract: pinout sla6023 sma4033 SLA6022 driver schematic SLA*6022 udn darlington driver ic SMA4032 SLA6022 sanken 2596 regulators SLA4031
Contextual Info: POWER & DISPLAY DRIVERS 431 THRU 458, 4310 THRU 4391, 5022 THRU 6030, AND 8001 BRIDGE AND HALF-BRIDGE TRANSISTOR ARRAYS Part Number STA431A STA434A STA457C STA458C SLA4310 SLA4313 SLA4340 SLA4390 SLA4391 SLA8001 SLA5022 SMA6010 SLA6012 SMA6014 SLA6020 SLA6022

100 amp npn darlington power transistors

Abstract: 10 amp npn darlington power transistors 10 amp npn power transistors SK9255 SK9139 15 amp npn darlington power transistors SK9229 SK9140 SK9234 SK9143
Contextual Info: TH On S O N / HÜ DISTRIBUTOR BIPOLAR TRANSISTORS SflE D • TQi?bö?3 OQauAÌT, 431 ■ TCSK com. Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application "complementary device type Device Power Dissipata Collector Current Continuous

2N6431

Abstract: 2N6432 2N6433 2N6430
Contextual Info: Datasheet Central 2N6430 2N6432 2 N 6 431 2N6433 NPN PN P Semiconductor Corp. C O M P L E M E N T A R Y SILICON T R A N S IS T O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JE D E C T O -1 8 C A S E Manufacturers of W orld C la ss Discrete Sem iconductors

2N3442

Abstract: E271 2n4347
Contextual Info: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment

Transistor PJ 431

Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

transistor c 6073

Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
Contextual Info: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005

TRANSISTOR bH-16

Abstract: BH-16 marking TRANSISTOR bH-10 bh16 transistor marking code 431 marking BH-10 bcp56-16t1g marking BH SOT-223 431 marking code sot BH-16 transistor
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

DO122

Abstract: BF181 bf 331 RIA23 10MEG MAX912 MAX913 DIA23 DO102 DO52
Contextual Info: * MAX912 FAMILY MACROMODELS * -* FEATURES: * Ultra-Fast, 10nS Propagation Delay 5mV overdrive * Input Voltage Range Extends Below Negative Supply * Low Power: 6mA Per Comparator (+5V) * Single +5V or Dual +/-5V Supply Operation * Available in 8-Pin DIP/SO (Single MAX913)

BF 331

Abstract: 10MEG DA10 MAX961 MAX962 DO122
Contextual Info: * MAX961 FAMILY MACROMODELS * -* FEATURES: * Ultra-Fast, 7nS Propagation Delay 5mV overdrive * Rail-to-Rail Input Voltage Range * Low Power: 8.5mA Per Comparator (+5V) * Single 3V/5V Supply Operation * Available in 8-Pin uMAX/SO (Single MAX961)

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

10MEG

Abstract: MAX909 RIA22 RIA23
Contextual Info: * MAX909 FAMILY MACROMODEL * -* FEATURES: * Fast, 40nS Propagation Delay 5mV overdrive * Wide Input Voltage Range Includes Ground * Internal Hysteresis for Clean Switching * Internal Latch * Available in 8-Pin DIP/SO (Single MAX909)

TRANSISTOR 431

Abstract: transistor 431 c BD177
Contextual Info: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively VABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Symbol : BD175 : BD177 Rating VcBO : BD179 Collector Emitter Voltage

Contextual Info: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).

2sa962

Abstract: 2SC2194 2SC2194A 2C163 2SA962A
Contextual Info: 9097250 TOS HIBA DE I TCHTaSD □□□7500 a Sb TOSHIBA íDISCRETE/OPTOl 5 6C 07 500 <D IS C R E T E / O P T O > D T ~ 3 3 - 0 5' SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 2 1 9 4 A Unit in mm POWER AMPLIFIER APPLICATIONS. a 9 MAX . 02.Z±O.2 "XL-FEATURES:

2SD1273

Abstract: 2SD1273A 100 HFK
Contextual Info: Power Transistors 2SD1273, 2SD1273A 2SD1273, 2SD1273A Silicon NPN Triple-Diffused Planar Type • Package D im ensions High DC C urrent Gain Iife , Power A m plifier —< ■ Features Unit ! mm • High DC cu rren t gain (hFt) • Good linearity of DC c u rre n t gain Qife)

Contextual Info: rZ Z SGS-THOMSON ^7# ssaœ iiuiÊTO©«e8 BUR52 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR • MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL

2SA962

Abstract: 2SA962A 2SC2194 SN7500
Contextual Info: TOSHIBA íDISCRETE/OPTOl 9097250 TOSHIBA Sb DE I T C H T S S n 56C DIS C R E T E / O P T O 07500 □□□7500 fl T-33-Q&' D 2SC2194A SILICON NPN EPITAXIA L TYPE (PCT PROCESS) Unit in mm POWER AMPLIFIER APPLICATIONS. ä 9 MAX . 0 3 .2 ± O .2 - FEATURES:

2SC2673

Abstract: 2SC4040 2sa881
Contextual Info: / I ransistors Is "7 2SC 2673 2S C 4040 2SC2673/2SC4040 Power Amp. Epitaxial Planar NPN Silicon Transistors • W Fi \fi± |H /D im en sio n s Unit : mm 1) Pc =600m W 2) VCE(sat)=150m V Typ (at Ic / I b = 500mA/50mA) ¿r iS l'o 3) 2SA881 /2SA15601 =l > Z f') „

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

MG20G4GL1

Abstract: mg20g4
Contextual Info: MG20G4GL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 7-F A S T -O N -T A B # 1 1 0 4 -F A ST -O N -T A B # 2 5 0 FEATURES: . The Collector is Isolated from Case. . 4 Power Transistors and 4 Free Wheeling Diodes