4310 MOSFET Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SPD25D28 TECHNICAL DATA DATASHEET 4310, Rev- DC Solid State Power Controller Module Description: The Solid State Power Controller SSPC Module is a 25 Amp microcontroller-based Solid State Relay designed to be used in Army, Air force and Navy in 28V DC applications. This module has integrated

sspc

Abstract: relay aircraft 25A 28V MIL-STD-1275B MIL-W-5088L 217F SN74LVC3G14 14-GAUGE 28V generator aerospace
Contextual Info: SENSITRON SEMICONDUCTOR SPD25D28NT TECHNICAL DATA DATASHEET 4310, Rev D DC Solid State Power Controller Module Description: This Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated up to 25A, designed to be used in 28V DC applications. This module has integrated current sensing with no

MIL-W-5088L

Abstract: sspc 4310 MOSFET SPD25D28 *4310
Contextual Info: SENSITRON SEMICONDUCTOR SPD25D28 TECHNICAL DATA DATASHEET 4310, Rev- DC Solid State Power Controller Module Description: The Solid State Power Controller SSPC Module is a 25 Amp microcontroller-based Solid State Relay designed to be used in Army, Air force and Navy in 28V DC applications. This module has integrated

DIODE i2t

Abstract: 450W Mosfet Module
Contextual Info: SENSITRON SEMICONDUCTOR SPDXXD28 SERIES TECHNICAL DATA DATASHEET 4310, Rev C DC Solid State Power Controller Module Description: These Solid State Power Controller SSPC Modules are microcontroller-based Solid State Relays rated up to 25A designed to be used in Army, Air force and Navy in 28V DC applications. These modules have

SPD25D28NT

Abstract: sspc 217F t4 switch 5 pin relay 28vdc drawing circuit diagram of relay 8 pin MIL-W-5088L MIL-STD-1275B 450W Mosfet Module
Contextual Info: SENSITRON SEMICONDUCTOR SPD25D28NT TECHNICAL DATA DATASHEET 4310, Rev D.1 DC Solid State Power Controller Module Description: This Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated up to 25A, designed to be used in 28V DC applications. This module has integrated current sensing with no

relay aircraft 20A 28V

Abstract: SPD25D28 SPD5D28-1 SPD5D28-3 SPD5D28-5 SPDXXD28 relay aircraft 25A 28V
Contextual Info: SENSITRON SEMICONDUCTOR SPDXXD28 SERIES TECHNICAL DATA DATASHEET 4310, Rev B DC Solid State Power Controller Module Description: The Solid State Power Controller SSPC Module is a microcontroller-based Solid State Relay rated upto 25A designed to be used in Army, Air force and Navy in 28V DC applications. This module has integrated

EN4310

Abstract: AX-9832 2SK1921
Contextual Info: Ordering number:EN4310 N-Channel Silicon MOSFET 2SK1921 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. unit:mm 2052C [2SK1921] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7

car mosfet audio amplifier diagram

Abstract: mosfet HF amplifier TDA car audio amplifier AM FM TUNER module car Car electronics 5.1 amplifier circuits tda audio amplifier 4320X 4310 SMD IC tetrode smd
Contextual Info: TUA 4310XS / TDA 4320X CAR RADIO Enclosure: figure 1 figure 2 figure 3 figure 4 figure 5 block circuitrys of the ICs schematic diagram of the demoboard partlist for the FM module SO-SMD partside of the pcb partside of the pcb measurement diagrams Integrated Circuits for Consumer Electronics

ir 4310

Abstract: irf7832pbf mj 4310 4310 MOSFET
Contextual Info: PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance

Contextual Info: IRFP140 S em iconductor D ata S h eet Ju ly 1999 31 A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)

FDA24N50F

Contextual Info: UniFETTM FDA24N50F N-Channel MOSFET 500V, 24A, 0.2 Features Description • RDS on = 0.166 ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

4311 mosfet transistor

Abstract: transistor tl 4311 IRFP140 TA17421 TB334
Contextual Info: IRFP140 Data Sheet July 1999 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF 4310

Abstract: ir 4310 IRF621R
Contextual Info: J2 H A R R IS IR F 620/621/6 2 2 /6 2 3 IR F620R /621R /622R /623R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B TOP VIEW • 4.0A and 5.0A, 1S0V - 200V • •-D S o n = 0 . 8 0 a n d 1 . 2 f l DRAIN (FLANGE)

fda24n50f

Abstract: A1872 ir 4310
Contextual Info: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

mj 4310

Abstract: Irf 1540 N MOSFET IRF 1540 Irf 1540 G IRF 4310 IRF3805S-7P L0043 DM 7820 AN-994 IRF3805S
Contextual Info: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G ID = 160A

Irf 1540 N

Abstract: Irf 1540 G MOSFET IRF 1540 IRF3805S-7P IRF 4310 AN-994 L0043 IRF3805S mj 4310
Contextual Info: PD - 96904 AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G ID = 160A

IRF 4310

Abstract: IRF3805S-7P mj 4310 AN-994 IRF3805S L0043
Contextual Info: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G ID = 160A

irf3805s

Abstract: AN-994 mj 4310 L0043 irf3805l-7p IRF3805L IRF3805L-7PPBF IRF3805S-7P
Contextual Info: PD - 97205A AUTOMOTIVE MOSFET IRF3805S-7PPbF IRF3805L-7PPbF Features l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V

Contextual Info: PD - 96904A AUTOMOTIVE MOSFET IRF3805S-7P HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 2.6mΩ‰ G S

FDA24N50F

Abstract: mj 4310
Contextual Info: UniFETTM FDA24N50F tm N-Channel MOSFET 500V, 24A, 0.2Ω Features Description • RDS on = 0.166Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

IRF 4310

Abstract: irf7832
Contextual Info: PD - 94594E IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance

IRF7832

Contextual Info: PD - 94594C IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance