4330 030 36 FERROXCUBE Search Results

MSA486

Abstract: uhf 3W amplifier BGY206 0104220
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY206 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS

BGY205

Abstract: 4330 030 36 ferroxcube
Contextual Info: Product specification P hilips Sem iconductors UHF amplifier module BGY205 PINNING -SOT321B FEATURES • 6 V nominal supply voltage DESCRIPTION PIN • 3.5 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output

bgy205

Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY205 FEATURES PINNING -SOT321B • 6 V nominal supply voltage PIN • 3.5 W pulsed output power 1 RF input • Easy control of output power by DC voltage. 2 Vc Vs RF output DESCRIPTION 3 APPLICATIONS

Amplifier Modules

Abstract: DA-157
Contextual Info: Philips Semiconductors Product specification UHF amplifier modules BGY122A; BGY122B FEATURES PINNING - SOT388B • Single 4.8 V nominal supply voltage PIN DESCRIPTION • 1.2 W output power 1 RF input • Easy control of output power by DC voltage 2 VC • Very high efficiency typ. 55%

DB35T

Abstract: BGY240
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY240 FEATURES PINNING - SOT388C • 3.5 V nominal supply voltage PIN DESCRIPTION • 3 W output power 1 RF input • Easy output power control by DC voltage. 2 Vc Vs RF output 3 APPLICATIONS

MGD363

Contextual Info: Product specification Philips Semiconductors UHF amplifier module BGY204 PINNING-SOT321B FEATURES • 4.8 V nominal supply voltage PIN DESCRIPTION • 3.2 W output power 1 RF input • Easy control of output power by DC voltage. 2 Vc 3 Vs RF output APPLICATIONS

4330 030 36 ferroxcube

Abstract: BGY925 FERROXCUBE 4330 MM 4054
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY925 FEATURES PINNING - SOT365 • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 Cl with an RF drive power of 36 mW. APPLICATIONS • Base station transmitting equipment operating in the

Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY925 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 Q with an RF drive power of 36 mW. APPLICATIONS DESCRIPTION 1 RF input 2 Vsi 3 VS2

BGY925

Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY925 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 £1 with an RF drive power of 36 mW. APPLICATIONS • Base station transmitting equipment operating in the

BGY925

Abstract: RF MOSFET MODULE MCD835 K-920 MSA44
Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY925/5 FEATURES PINNING - SOT365A • 26 V nominal supply voltage PIN • 23 W output power into a load of 50 £2 with an RF drive power of 36 mW. APPLICATIONS DESCRIPTION 1 RF input 2 Vsi

uhf amplifier design

Abstract: w-TMB uhf amplifier BGY206 MSA486 SC09 MGD353 47VC
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY206 UHF amplifier module Preliminary specification File under Discrete Semiconductors, SC09 1996 May 29 Philips Semiconductors Preliminary specification UHF amplifier module BGY206 FEATURES PINNING - SOT388A • 4.8 V nominal supply voltage

philips ferroxcube 4c6

Abstract: ferroxcube 4322 020 97171 68w transistor transistor 68W MCA264 choke marking nb 03 FERROXCUBE 4330 BLF175 ferroxcube 4322 M11 marking transistor
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7 ^ 3 1 -// SbE D I 7110Û2L BLF175 DGM3712 2Ô2 « P H I N PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control

UHF amplifier module

Abstract: BGY110F uhf amplifier design transistor CD 910 905-890 SL 100 NPN Transistor uhf amplifier 110G BGY110D BGY110E
Contextual Info: Product specification Philips Semiconductors , 1U_ . . . UHF amplifier modules BGY110D; BGY110E; BGY110F; BGY110G PINNING - SOT246 DESCRIPTION The BGY110 is a four-stage UHF amplifier module, primarily designed for hand-held transmitting equipment operating from a nominal

Contextual Info: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

BGY205

Abstract: pn1996 2 MHz ultrasonic transmitter
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY205 UHF amplifier module Product specification Supersedes data of May 1994 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY205 FEATURES PINNING - SOT321B • 6 V nominal supply voltage

ferroxcube 4322 020 97171

Abstract: philips ferroxcube 4c6 D1 Marking SOT123 BLF175 RF transistor marking code Mt UBB0711 bje resistor MCA264 CA-272 ferroxcube 4322
Contextual Info: P h n ip ^ e m ic o n d u c to i^ ^ ^ ^ • b b5 3 T 31 □□2 T6 bM 4□4 WÊ A P X Product specification HF/VHF power MOS transistor BLF175 N AMER P H I L I P S / D I S C R E T E FEATURES • • • • • • PIN CONFIGURATION High power gain Low intermodulation distortion

msa386

Abstract: MGD350 BGY119A BGY119B SC09 pn1996
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY119A; BGY119B UHF amplifier modules Product specification Supersedes data of April 1994 File under Discrete Semiconductors, SC09 1996 May 08 Philips Semiconductors Product specification UHF amplifier modules BGY119A; BGY119B

philips ferroxcube 4c6

Abstract: mgp063 BLF175 PHILIPS HF CHOKE type 4330 hf amplifier for transformer D1 Marking SOT123 PHILIPS toroidal core MGP080 ferroxcube 4C6 ferroxcube 4322 020 97171
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF175 PIN CONFIGURATION • High power gain • Low intermodulation distortion

thermal compound wps II

Abstract: PHILIPS TANTALIUM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGF844 GSM800 EDGE power module Preliminary specification 2002 Oct 25 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 PINNING - SOT365C FEATURES • Low distortion to a GSM EDGE signal. PIN

BGY204

Abstract: SC09 MGD375
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY204 UHF amplifier module Product specification File under Discrete Semiconductors, SC09 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY204 FEATURES PINNING - SOT321B • 4.8 V nominal supply voltage

BGY204

Abstract: SC09
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY204 UHF amplifier module Product specification File under Discrete Semiconductors, SC09 1996 May 21 Philips Semiconductors Product specification UHF amplifier module BGY204 FEATURES PINNING - SOT321B • 4.8 V nominal supply voltage

Contextual Info: DISCRETE SEMICONDUCTORS [M m SMEET BGY240S UHF amplifier module 1998 Jul 09 Preliminary specification Supersedes data of 1998 May 07 File under Discrete Semiconductors, SC19a Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification

BGY110D

Abstract: BGY110E 110E 110G BGY110F BGY110G MBH304 Amplifier Modules
Contextual Info: Product specification Philips Semiconductors BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules PINNING - SOT246 FEATURES • 7.2 V nominal supply voltage DESCRIPTION PIN • 1.7 W output power 1 RF input/Vc • Easy control of output power by DC voltage.

thermal compound wps II

Abstract: austerlitz BGF844 SR200 SR400 SR600
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of