437 BD Search Results

21-597

Abstract: 245d
Contextual Info: RED INDICATESORIGINAL D DIA V E ASSEMBLE FLATS PER A A 3, 2, 1. V- □ DIA ,516 ,437 .213 K 3 7 5 ±,0D5 DIA ,255 FIG ,312 WRENCH FLATS CABLE ENTRY - E ±.005 WRENCH FLATS 1A TAI-117 -003 SHGWN .290 .578 .500 ,255 .516 .437 .290 •57B .500 .255 .516 .437

BD433

Abstract: BD434 BD435 BD436 BD437 BD438
Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

bd435 fairchild

Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

bd433

Abstract: BD434 BD435 BD436 BD437 BD438
Contextual Info: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

bd435

Abstract: BD437 transistor bd435 transistor BD437 BD433
Contextual Info: BD433/435/437 BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 Collector current ICM: 4 Collector-base voltage BD433 V(BR)CBO: W (Tamb=25℃) 1. EMITTER 2. COLLECTOR A 3. BASE 123 22 V BD435 32 V BD437 45 V Operating and storage junction temperature range

transistor d325

Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Contextual Info: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector

BD437

Abstract: BD433 ic 437 BD434 BD435 437 ic
Contextual Info: SavantIC Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD434/436/438 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

BD435

Abstract: ic 435 BD433 BD437
Contextual Info: Inchange Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD434/436/438 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1

BD437

Abstract: bd433 b 435 transistor
Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage

BD435

Abstract: transistor bd435 BD433 BD434 BD436 BD437 BD438
Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD433 : BD435 : BD437 Collector Emitter Voltage : BD433

BD435

Abstract: BD437 transistor BD435 BD433 ic 437
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Amplifier and switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage

BD434

Abstract: BD438 BD436
Contextual Info: SavantIC Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD433/435/437 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

BD434

Abstract: BD436 ic 438 BD438
Contextual Info: Inchange Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD433/435/437 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1

BD441

Abstract: bd 426 BD 440 NPN transistors BD437 BD - 100 V BD 439 437 bd ic 437 BD439 B0439
Contextual Info: « BD 437 • BD 439 • BD 441 'W Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: Allgemein Im NF-Berelch Applications: General in AF-range Features: Besondere Merkmale: • Hohe Spitzenleistung • High peak power

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Amplifier and Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage

BD437

Abstract: BD433 BD435 transistor BD437 transistor BD435 BD434 BD436 BD438 TRANSISTOR BD433
Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol Rating Unit 22 V : BD435 32 V : BD437

b 435 transistor

Abstract: 2A4030 BD437
Contextual Info: BD433/435/437 NPN EPITAXIAL SILICO N TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol : BD433 VcBO : BD435 : BD437 Collector Emitter Voltage : BD433

Contextual Info: BD433, BD435, 437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM rr 7.8 B 10.5 10.8

Contextual Info: BD433/435/437 NPN Epitaxial Silicon Transistor Features • Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base Ordering Information Part Number Marking Package Packing Method

Contextual Info: BD433, BD435, 437 BD434, BD436, BD438 BD433, 435, 437 BD434,436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 - rr I_ DIM & MAX. A 7,4

BD435

Abstract: BD437 BD433 TRANSISTOR BD433
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD433/435/437 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 4 A ICM: Collector-base voltage BD433 22 V V(BR)CBO:

8043

Abstract: 33T4 BD433 BD434 BD435 BD436 BD437 BD438 DDD121D
Contextual Info: BD433, BD435, 437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS M edium pow er linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 DIM MIN. MAX. ‘V A 7.4

all ic data

Abstract: BD440 BD441 BD442 BD438 BD439 BD433 BD434 BD435 BD436
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN/PNP PLASTIC MEDIUM POWER SILICON TRANSISTORS BD433, 435, 437, 439, 441 NPN BD434, 436, 438, 440, 442 PNP