43DBM Search Results

EIA1718-1P

Abstract: EIB1718-1P
Contextual Info: Excelics EIA/EIB1718-1P PRELIMINARY DATA SHEET 17.7-18.7GHz, 1W Internally Matched Power FET • • • • • • 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE 25% TYPICAL EIB FEATURES HIGH IP3(43dBm TYPICAL)

FLL21E090IK

Contextual Info: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,

212-PIN

Abstract: EUDYNA marking c7 sot-89 Eudyna Devices power amplifiers ISO-14001 KP035J P02221B2P P0222
Contextual Info: P02221B2P Technical Note 500mW InGaP HBT Amplifier ♦Features 4 ♦Functional Diagram •1.8 to 2.5GHz Frequency Band ·+26.5dBm Output Power ·+43dBm Output IP3 ·+5V Single Supply Voltage ·14dB Gain at 2.14GHz ·Highly Reliable InGaP HBT ·Pb-free SOT-89 SMT Package

sumitomo 131 datasheet

Abstract: DC 8881 ml marking ml marking sot 89 ISO-14001 KP028J P0120008P RR0816
Contextual Info: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package

P012

Abstract: ISO-14001 KP028J P0120008P RR0816 marking c7 sot-89
Contextual Info: P0120008P Technical Note 1W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +28 dBm output power · Up to +43dBm Output IP3 · High Drain Efficiency · 12dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

Contextual Info: MMIC AP205A Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 14.0dB Gain • 22dBm P1 dB • Single +5V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89

WP-22

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

Contextual Info: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTION FEATURES n n n n n n n n n 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise: 15dB NF, en = 2.6nV/√Hz (20MHz)

trw RF POWER TRANSISTOR

Abstract: trw rf transistor CA2875R trw rf hybrid amp TRW amplifier
Contextual Info: RF Devices Division TRW Electronic Components Group CA2875R CA2875R Thin Film RF Linear Hybrid Amplifier • Wide Dynamic Range: +43dBm Third Order Intercept • Excellent Match at Input/Output: Lowest VSWR • Low Noise Figure Push-pull Cascode Circuit

AP205A

Abstract: Amplifier SOT-89 c4 mmic C4 sot 89 sot89 mmic 25 AP205 mmic amplifier sot-89 C5100 mmic C5 sot 89
Contextual Info: MMIC AP205A Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 14.0dB Gain • 22dBm P1 dB • Single +5V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89

mmic C4 sot 89

Contextual Info: MMIC AP209 Product Features Application • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89

SMM-280-2

Contextual Info: SMM-280-2 1.5-2.7 GHz, 2 Watt GaAs MMIC Amplifier April, 1995 Features - 24dB Gain and 33dBm Output Power - High Third Order Intercept, +43dBm Typ - High Power Added Efficiency - Low VSWR 1.7:1 Typical - Copper-Tungsten Package Description Stanford Microdevices' SMM-280-2 is a high performance

Contextual Info: SHF-0500 DC- 8 GHz, 2 Watt AIGaAs/GaAs HFET Preliminary Data Features - AIGaAs/GaAs Heterostructure FET Technology - +33dBm Output Power at 1dB Compression - High Power Added Efficiency: Up to 40% - +43dBm Output 3rd Order Intercept Point - Low Cost Copper Tungsten Package

Contextual Info: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

Contextual Info: MMIC AP249 Product Features Application • 50 ~ 3000 MHz • GaAs MMIC • 43dBm Output IP3 • 26dB Gain • 24dBm P1dB • Single +9V Supply •C DMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP249 is a high linearity amplifier designed with GaAs MMIC. AP249 is designed for applications such as GSM, CDMA, WCDMA driver devices which require high IP3

Contextual Info: Push Pull Type Power Transistor RT440 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 46dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

Contextual Info: AE618 E-pHEMT MMIC Product Features Applications • 5 ~ 1000MHz • 8 ~ 12V Supply Voltage • Lower manufacturing cost • -69dBc CSO 79 Channels @ 43dBmV • -64dBc CTB 79 Channels @ 43dBmV • -60dBc XMOD 79 Channels @ 43dBmV • Cable Modem • FTTH G-PON, GE-PON

FLL21E090IK

Contextual Info: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,

LT6402

Abstract: OIP310M OIP320M OIP325M LTC17XX LTC22xx LC-B-B
Contextual Info: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTION FEATURES n n n n n n n n n 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise: 15dB NF, en = 2.6nV/√Hz (20MHz)

M/A-COM TOP PART MARKING QFN

Abstract: OIP310M L 0706 lter marking LT6402 OIP320M OIP325M
Contextual Info: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise:

AP209

Abstract: 50-3000MHz sot89 mmic 25 mmic C4 sot 89 PFL3 AP-209
Contextual Info: MMIC AP209 Product Features Applications • 50 ~ 3000MHz • GaAs MMIC • 43dBm Output IP3 • 13.7dB Gain • 24dBm P1 dB • Single +9V Supply • SOT-89 SMT Package • CDMA, W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package Type: SOT-89

Contextual Info: TGA2533-SM Ku-Band Power Amplifier Applications •  Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features          Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 43dBm Power: 34.5 dBm Psat, 33 dBm P1dB

B0725

Abstract: JESD22-A114 RO4003 TGA2533-SM
Contextual Info: TGA2533-SM Ku-Band Power Amplifier Applications • • Point-to-Point Radio Ku-Band VSAT QFN 5x5mm 24L Product Features • • • • • • • • • Functional Block Diagram Frequency Range: 12.5 – 15.5 GHz TOI: 43dBm Power: 34.5 dBm Psat, 33 dBm P1dB

16l soic8

Abstract: qfn16 thermal resistance
Contextual Info: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters