4400A Search Results

Contextual Info: TOSHIBA 4400ASJL/AFTL80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC51V 4400ASJL/AFTL is the new generation dynam ic RAM organized 1,048,576 w ord by 4 bit. The TC51V 4400A SJL/AFTL utilizes T oshiba's CM OS silicon gate process technology as w ell as advanced

alcoa electrical joint compound

Abstract: SF1154 dissipator presspak diode A800 A800L A800LA A800LB G322L A800LD
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A SPCO The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

512kx4

Abstract: SOJ26-P-350 1024X1024X4
Contextual Info: 4400AP/AJ/ASJ/AZ-80 j g g g g P/AJ/ASJ/AZ-10 m Ë È Mm ê s M S ii* ® S m PRELIMINARY 1,048,576 W O R D x 4 BIT D Y N A M IC RAM DESCRIPTION The 4400AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 4400AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well

RT 8284 N

Contextual Info: O rd e rin g n u m b e r :EN 4400A _ 1SV248 Silicon E pitaxial Type PIN Diode for VHF, UHF, AGC _Applications F e a tu re s • Very small-sized package facilitates high-density mounting and permits lSV248-applied equipm ent to be made sm aller.

SF1154

Abstract: SF-1154
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

dissipator

Abstract: GE-SPCO SF116 TI 745A A800 A800L A800LA A800LB A800LC A800LD
Contextual Info: GE-SPCO 34E D • 3ß74Sß4 0000156 b H G E S P A800 —-oc-tb 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design, manufactured by Staiic ¿'öwer Component uoeràtion Malvern,PA USA G E CO/ S T A T I C PUR CMPN T

SF1154

Abstract: dissipator presspak A800 A800L A800LA A800LB A800LC A800LD A800LE
Contextual Info: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.

thyristor Vtm 6.5

Abstract: 2400Volts thyristor POWEREX
Contextual Info: TDS4_4402 Phase Control Thyristor Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697 www.pwrx.com 4400Amperes 2400Volts 724 925-7272 The TDS4 is a medium voltage, high current, thin pack disc SCR employing a amplifing gate structure. This thin package provides

Contextual Info: SEMiX303GB12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 466 A Tc = 80°C 359 A 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 338 A Tc = 80°C 252 A 900 A -40 . 175 °C ICRM = 3xICnom VGES

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GD 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

4-400a eimac

Abstract: centrifugal blower Tube 4-400a Eimac 4-400a "RF Power Amplifier"
Contextual Info: 4-400A Beam Power Tube F O R C E D -A IR COOLED GENERAL DATA E le c t r ic a l: F ila m e n t, T h o ria te d T ungsten: V o lt a g e AC o r D C . 5 ± 5% C u rre n t at 5 v o l t s . 1 4 .5 T ra n sc on d u c tan ce , f o r p la t e v o l t s =

PURE SINE WAVE inverter schematic diagram

Abstract: 2262 af C17S CS5316 inverter PURE SINE WAVE schematic diagram krohn-hite 4400a ups PURE SINE WAVE schematic diagram sr 2262 1 phase pure sine wave inverter schematic design pure "sine wave" power inverter
Contextual Info: CS5317 Semiconductor Corporation 16-Bit, 20 kHz Oversampling A/D Converter Features General Description The CS5317 is an ideal analog front-end for voiceband signal processing applications such as high-perform­ ance modems, passive sonar, and voice recognition

Contextual Info: MURI DA30020 DACO SEMICONDUCTOR CO,LTD. THRU MUFRI DA30060 SUPER FAST HIGH POWER DIODE MODULE TYPES 300A Features High Surge Capability Types Up to 600V V rrm Isolation Type Package Electrically Isolation base plate 300 Amp Rectifier 200- 600 Volts HEAVY DIODE

Contextual Info: M URTA60020 R DACO SEMICONDUCTOR CO., LTD. THRU M URTA60060(R) SUPER FAST DIODE MODULE TYPES 600A Features High Surge Capability 600 Amp Rectifier 200-600 Volts Types Up to 600V V RRM Isolation Type Package Electrically Isolation base plate H E AV Y TH REE TO W ER

Contextual Info: • li 6 INTEGRATED CIRCUIT TO SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 4400APL / AJ L / A SJ L / A Z L / AFTL / ATRL - 8 0 / 1 0 SILICON GATE CMOS TECH NICAL DATA TENTATIVE D A TA 1.048.576 W ORD x 4 BIT DYN AM IC RAM DESCRIPTION The 4400APL/AJL/ASJL/AZL/AFTL/ATRL is the new generation dynamic RAM organized

AZL-70

Contextual Info: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The 4400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The 4400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the

71C4400A

Contextual Info: GOLDSTAR TECHNOLOGY IN C/ 47E D • 402Ö7S7 GQ03455 ö «GST T-M-Z3-tZ GoldStar GM 4400A/AL 1,048,576 WORDSx 4 BIT CMOS DYNAMIC RAM Description Features The 4400A/AL is the new generation dy­ namic RAM organized 1,048,576 x 4 Bits. 4400A/AL has realized higher density, higher per­

SIDC42D60E6

Contextual Info: Preliminary SIDC42D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC42D60E6 600V 100A A This chip is used for:

transistor equivalent book FOR D 1047

Abstract: signetics ne5534a CS5012A 2n5210 equivalent NE5534AN Thomas M Frederiksen signetics lm324 AN06 CS5014 CS5016
Contextual Info: AN06 Application Note Buffer Amplifiers for the CS5012A/CS5014/CS5016/ CS5101A/CS5102A/CS5126 Series of A/D Converters by Jerome Johnston +5V Analog Supply VA+ VD+ BW BP/UP Signal Conditioning Analog Signal Source Buffer Amplifier V+ Voltage Reference CLKIN

Contextual Info: GMM7361000SG/SGS-60/70/80 1,048,576 W O R D S x 36 BIT GMM7362000SG-60/70/80 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 W O R D Sx 36 BIT CM O S DYNA M IC RAM M O DULE Description Features The G M M 7361000SG /SG S is a 1M x 36 b its d y ­ n am ic RAM M O D U LE w hich is assem b led 8

SIDC42D60E6

Contextual Info: Preliminary SIDC42D60E6 Fast switching diode chip in EMCON-Technology FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR IF SIDC42D60E6 600V 100A A This chip is used for:

Contextual Info: Subminiature, Radial Leaded, Fast-Acting Fuses PC-Tron Series Part Number System/Ordering - An Option Code Must Be Selected Radial Leaded Device • Specify packaging code prefix, product and option code suffix BK PCB- 1/2 -R Packaging Code Prefix Fuse Series / Lead Style

buss pcb 3a

Abstract: buk catalog buss pcb 250v 3A
Contextual Info: Bussm ann PC-Tron Series Printed Circuit Board Fuses PC-Tron® Subminiature Fuses Dimensional Data: All tolerances Standard Fuse PCB, PCD ± .005" ± .13 mm Socket (PCS) .12" ±.010" (3.05mm ± 0.25mm) CATALOG SYMBOL: PCB, PCC, PCF, PCH, PCD, PCE, PCG

Contextual Info: DIM150WHS12-E000 DIM150WHS12-E000 Half Bridge IGBT Module PDS5630-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)