441B205 Search Results

HZT22

Abstract: ZTK22 DO-35 BLUE CATHODE Hitachi Scans-001
Contextual Info: blE J> m 441b205 o o m i o a b77 • HIT4 HITACHI/ OPTOELECTRONICS Appendix O HZT22 0.1 General Description Hitachi monolithic IC HZT22 is specially designed for stabilized power supply of a CATV converter. 0.2 Features • Lower temperature coefficient of reference voltage (compatible to ZTK22, but more stable).

HITACHI LCD h2571

Abstract: h2571
Contextual Info: HITACHI/ OPTOELE CTR ONICS 40 blE D • 44^505 0012411 031 « H I T 4 HITACHI 7 ^ /A 3 y H2571 ■ 3 2 character x 1 line ■ INTERNAL PIN CONNECTION Controller LSI H D 4 4 7 8 0 is built-in (See page 115). Pin No. ■ + 5 V single power supply M E C H A N IC A L D A T A (Nom inal dimensions)

HE8807SG

Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Contextual Info: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­

HE1301

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are

2SK1763

Abstract: 44TB2 Hitachi Scans-001
Contextual Info: blE ]> • 44TbEG5 ÜQlBSEb fl47 « H I T 4 2SK1763 , 2SK1763 s Silicon N Channel MOS FET HITACHI/(OPTOELECTRONICS) Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — can be driven from

CHARACTERISTICS DIODE 1n4732

Abstract: zener diode 1n4744 1n4753 1n4737 zener diode 1N4742 1N4733 zener diode diode 1n4742 TMA 900 1n4747 DIODE 1N4747
Contextual Info: b l E D • 44 Tb EG 5 OOmGSfi 7 3 T ■ H U M H ITACHI/ OPTOELECTRONI CS Appendix E 1W Zener Diodes 1N4728 through 1N4753 E .l General Description Hitachi 1W zener diode series 1N4728 through 1N4753 are specially designed for stabilized power supply, clipper, limiter, and surge absorber applications.

HL7836MG

Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
Contextual Info: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light

hitachi sr 302

Contextual Info: HITACHI/ OPTOELECTRONICS 54E HH T b SD S D D 1 2 1 S 3 254 « H I T 4 InGaAsP LD H L 1 5 6 1 A /A C /B F Description The HL1561A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)

HE8807SG

Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.

11w cfl circuit

Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Contextual Info: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm

hitachi he1301

Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Contextual Info: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro­ priate as the light source for various optical application devices, including laser beam printers and laser

Thermistor bth 471

Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
Contextual Info: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier

hitachi sr 302

Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Contextual Info: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)

T9040

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are

Contextual Info: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.

HL8312E

Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
Contextual Info: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope

HL7802E

Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040
Contextual Info: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.

2SK619

Abstract: J10V diode gate
Contextual Info: 2SK 619 blE D 44TbE0S 0013103 bib • HITH HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET it rT HIGH FREQUENCY HIGH IMPEDANCE AMPLIFIER ì h ■ FEATURES • • High Voltage (VDSS - 70 V) Effective to Suppress Signal Radiation Connected Source to Heat Sink