Untitled
Abstract: No abstract text available
Text: RFPA1012 RFPA1012 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package Style: DFN, 8-Pin, 2mm x 2mm Features High Linearity: OIP3 = 44dBm at 900MHz Low Noise: NF = 3.5dB at 900MHz Low DC Power: 5V, 90mA
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RFPA1012
400MHz
2700MHz
44dBm
900MHz
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lmh6881
Abstract: ADC12D1800rf mixer ADC12D1800RF L6881
Text: LMH6881 DC to 2.4GHz, High Linearity, Programmable Differential Amplifier General Description The LMH6881 is a high-speed, high-performance, programmable differential amplifier. With a bandwidth of 2.4GHz and high linearity of 44dBm OIP3, the LMH6881 is suitable for
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LMH6881
LMH6881
44dBm
24-Pin
SQA24A
ADC12D1800rf mixer
ADC12D1800RF
L6881
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FLM0910-25F
Abstract: 103-61 s-parameter s11 s12 s21 10000 ED-4701 9.5-10.5GHz
Text: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM0910-25F
44dBm
FLM0910-25F
103-61
s-parameter s11 s12 s21 10000
ED-4701
9.5-10.5GHz
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L6881SQ
Abstract: No abstract text available
Text: LMH6881 www.ti.com SNOSC72D – JUNE 2012 – REVISED NOVEMBER 2012 LMH6881 DC to 2.4GHz, High Linearity, Programmable Differential Amplifier Check for Samples: LMH6881 FEATURES 1 • • • • • • • • • 23 Small Signal Bandwidth: 2400MHz OIP3 @ 100 MHz: 44dBm
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LMH6881
SNOSC72D
LMH6881
2400MHz
44dBm
-100dBc
L6881SQ
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Untitled
Abstract: No abstract text available
Text: LMH6881 DC to 2.4GHz, High Linearity, Programmable Differential Amplifier General Description The LMH6881 is a high-speed, high-performance, programmable differential amplifier. With a bandwidth of 2.4GHz and high linearity of 44dBm OIP3, the LMH6881 is suitable for
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LMH6881
LMH6881
44dBm
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9.5-10.5GHz
Abstract: No abstract text available
Text: FLM0910-25F X, Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd =30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM0910-25F
44dBm
FLM0910-25F
FCSI0202M200
9.5-10.5GHz
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ED-4701
Abstract: FLM0910-25F
Text: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM0910-25F
44dBm
FLM0910-25F
ED-4701
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16 pin 4x4 amplifier gsm
Abstract: mch185C102kk MCH185A100DK ECJ-1VF1A105Z
Text: PRELIMINARY DATA SHEET ECP052 0.5 WATT POWER AMPLIFIER Features Applications 0.8GHz to 1GHz 28.0dBm P1dB High Linearity: 44dBm OIP3 High Efficiency: PAE > 50% 17dB Linear Gain High Reliability Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE
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ECP052
44dBm
QFN-16
ECP052
ECP052G
ECP052G-500
ECP052G-1000
ECP052D
ECP052D-500
ECP052D-1000
16 pin 4x4 amplifier gsm
mch185C102kk
MCH185A100DK
ECJ-1VF1A105Z
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9.5-10.5GHz
Abstract: No abstract text available
Text: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM0910-25F
44dBm
FLM0910-25F
9.5-10.5GHz
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EGN28B400M1B-R
Abstract: JESD22-A114 Sumitomo 1076
Text: EGN28B400M1B-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 400W min. @ Pin=25W (44dBm) •High Efficiency: 50%(typ.) @ Pin=25W (44dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B400M1B-R offers high power, high
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EGN28B400M1B-R
44dBm)
EGN28B400M1B-R
JESD22-A114
Sumitomo 1076
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TOSHIBA HEMT
Abstract: TGI7785-120L
Text: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER Pout=51.0dBm at Pin=44.0dBm HIGH GAIN GL=11.0dB at Pin=20.0dBm BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE LOW INTERMODULATION DISTORTION
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TGI7785-120L
-25dBc
44dBm
20dBm
7-AA06A)
TOSHIBA HEMT
TGI7785-120L
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Untitled
Abstract: No abstract text available
Text: OPA 693 OPA6 93 OPA693 SBOS285 – OCTOBER 2003 Ultra-Wideband, Fixed Gain Video BUFFER AMPLIFIER with Disable FEATURES DESCRIPTION ● VERY HIGH BANDWIDTH G = +2 : 700MHz ● FLEXIBLE SUPPLY RANGE: +5V to +12V Single Supply ±2.5V to ±6V Dual Supplies ● INTERNALLY FIXED GAIN: +2 or ±1
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OPA693
SBOS285
700MHz
120mA
OT23-6
OPA693
2500Vstruments
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47DBM
Abstract: No abstract text available
Text: News Release ⎜ www.linear.com 50Ohm IF Gain Block Provides 47dBm OIP3, 15.5dB Gain Consumes only 450mW MILPITAS, CA – September 18, 2012 – Linear Technology announces the LTC6431-15, a 15.5dB gain block that achieves high dynamic range in a 50Ohm environment from 20MHz to
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50Ohm
47dBm
450mW
LTC6431-15,
20MHz
240MHz,
44dBm.
450mW.
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Untitled
Abstract: No abstract text available
Text: R3005300L R3005300L 30dB Reverse Hybrid 5MHz to 300MHz Low Current Package: SOT-115J The R3005300L is a hybrid reverse amplifier. The part employs a silicon die. It has extremely low distortion and superior return loss performance. The part also provides
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R3005300L
300MHz
OT-115J
R3005300L
300MHz
160mA
24VDC
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QFN24
Abstract: WCDMA* antenna WCDMA1700 NJG1658K34
Text: NJG1658K34 DP7T ANTENNA SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1658K34 is a GaAs DP7T antenna switch IC designed for WCDMA/GSM multimode handsets. This switch can be operated by six bits control signal from 1.3V of logic high voltage. This switch features low insertion loss and low distortion. Also, the ESD
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NJG1658K34
NJG1658K34
QFN24-34
WCDMA800
WCDMA1700/1500
WCDMA2000
GSM850/900
GSM1800/1900
QFN24
WCDMA* antenna
WCDMA1700
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Untitled
Abstract: No abstract text available
Text: OPA 693 OPA6 93 OPA693 SBOS285 – OCTOBER 2003 Ultra-Wideband, Fixed Gain Video BUFFER AMPLIFIER with Disable FEATURES DESCRIPTION ● VERY HIGH BANDWIDTH G = +2 : 700MHz ● FLEXIBLE SUPPLY RANGE: +5V to +12V Single Supply ±2.5V to ±6V Dual Supplies ● INTERNALLY FIXED GAIN: +2 or ±1
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OPA693
SBOS285
700MHz
120mA
OT23-6
OPA693
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Untitled
Abstract: No abstract text available
Text: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz
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FLM3742-25DA
UJ11jU
44dBm
-45dBc
32dBm
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FLM4450-25D
Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
Text: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-25DA
44dBm
-45dBc
32dBm
FLM4450-25DA
FLM4450-25D
FUJI GaAs FET
25Q 328
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Untitled
Abstract: No abstract text available
Text: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q
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FLM5964-25DA
UJ11bU
44dBm
-45dBc
32dBm
5964-25D
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FLM3742-25DA
Abstract: No abstract text available
Text: F|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q
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FLM3742-25DA
44dBm
-45dBc
32dBm
FLM3742-25DA
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FLM4450-25DA
Abstract: FLM4450-25D
Text: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-25DA
44dBm
-45dBc
32dBm
FLM4450-25DA
FLM4450-25D
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FLM5964-25DA
Abstract: CS 5800
Text: lîrTCI FLM5964-25DA r UJI1bU Internally Matched Power GaAs F E Ts FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-25DA
44dBm
-45dBc
32dBm
FLM5964-25DA
CS 5800
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FLM6472-25D
Abstract: No abstract text available
Text: F|.9J^., FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-25DA
44dBm
-45dBc
32dBm
Te298
FLM6472-25D
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FLM6472-25DA
Abstract: No abstract text available
Text: F| .ÇjU-, FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ.) High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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FLM6472-25DA
44dBm
-45dBc
32dBm
Vo119
FLM6472-25DA
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