ATF13136
Abstract: ATF13136-TR1 ATF13136-STR atf13136str 2-18 GHz Low Noise Gallium Arsenide FET ATF-13136-TR1
Text: 44M7SaM ODOTflTM DTE • H P A blE D HEWLETT- PAC KARD/ CHPNTS WhoI H E W L E T T mLftM PA C K A R D ATF-13136 2-16 GHz Low Noise Gallium Arsenide FET 36 mlcro-X Package1 Features Low Noise Figure: 1.2 dB typical at 12 GHz High Associated Gain: 9.5 dB typical at 12 GHz
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44M7SaM
ATF-13136
ATF13136
ATF13136-TR1
ATF13136-STR
atf13136str
2-18 GHz Low Noise Gallium Arsenide FET
ATF-13136-TR1
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IAM-82008
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CÎ1PNTS b lE I> • *44M7Sö M DG10G02 543 « H P A W fw l H EW LETT m HEM P A C K A R D S ilico n B ipolar MMIC 5 GHz A ctive D ouble B alanced M ixer/IF Amp Technical Data IAM-82008 Features • RF-IF C onversion Gain: 15 dB from 0.05-5 GHz
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44M7SÃ
DG10G02
IAM-82008
IAM-82008
IAM-82008-TR1
IAM-82008-TR2
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heds 6300
Abstract: No abstract text available
Text: HEWL E TT -P A CK AR D / CMPNTS hlE T> m MM47SÔ4 O D D Ü B I S S 3 ? H H P A HEW LETT PACKARD T'- Technical Data HLMP-PXXX Sériés HLMP-Q1XX Sériés HLMP-6XXX Sériés HLMP-70XX Sériés Features Dome Packages The HLMP-6XXX Series dome lamps for use as indicators use a
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MM47SÃ
HLMP-70XX
HLMP-66XX
heds 6300
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100A101MCA50
Abstract: No abstract text available
Text: That H E W L E T T ' mLfim P A C K A R D Surface Mount Microwave Schottky D etector D iodes in SOT-323 SC -70 Technical Data HSMS-285A Series HSMS-286A Series F eatures Package Lead Code Identification (Top View) • S u rface M ount SOT-323 P ackage • H igh D e te c tio n S en sitiv ity :
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OT-323
HSMS-285A
HSMS-286A
OT-323
5965-4704E
5965-8838E
100A101MCA50
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hp 2400
Abstract: HCPL-2411
Text: HEWLETT-PACKARD/ CMPNTS T> blE • 44H75Ô4 DDO^DMS 15b « H P A W mL'hal HM HP AE CWKLAERTDT 20 M Baud High CMR Logic Gate Optocoupler HCPL-2400 HCPL-2411 • High Speed: 4 0 MBd Typical D ata R ate • High Common Mode Rejection H C P L -2400:10 kV/us @
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44H75Ã
HCPL-2400
HCPL-2411
E55361)
M3L-STD-1772Version
HCPL-5400/1)
HCPL-2400/11
hp 2400
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hl 4929
Abstract: 34T sot-363 ATIC 164 D2 48 pin
Text: That HEWLETT WL'kM PACKARD 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, A ctive Bias Circuit Surface Mount Package SOT-363 SC -70 D escription Pin C onnections and Package Marking The INA-12063 is a unique RFIC
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INA-12063
OT-363
INA-12063
OT-363
OT-143
5965-5365E
4447S
GD1S32Û
hl 4929
34T sot-363
ATIC 164 D2 48 pin
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SK 1117
Abstract: No abstract text available
Text: 10-1500 MHZ MEDIUM POWER T0-8 CASCADABLE AMPLIFIER HAMP-1001 HAMP-1001 TXV T E C H N IC A L D A T A A P R IL 1985 Features 12.96 0.510 12.44 (0 .490) DIA. ULTRA WIDE 1 dB BANDWIDTH 5-2800 MHz EXCEPTIONAL PHASE LINEARITY 0.5 Degree Deviation from 100 to 1500 MHz
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HAMP-1001
HAMP-1001TXV
001b7fi4
SK 1117
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Untitled
Abstract: No abstract text available
Text: W tin l H E W L E T T mllim PACKARD 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features • Ultra-Miniature Package • Internally Biased, Single +5 V Supply 1 4 mA • 1.6 dB N oise Figure at 2.4 GHz • 21.8 dB Gain at 2.4 GHz • +3.1 dBm P idB at 2.4 GHz
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MGA-86563
OT-363
MGA-86563
5964-9806E
5965-4746E
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Untitled
Abstract: No abstract text available
Text: W tiol H E W L E T T mL'HÆ P AC K A R D High Performance Surface Mount Chip LEDs Technical Data SunPower Series HSMX-S660 Series HSMX-S670 Series HSMX-S690 Series Features Description • High Brightness AlInGaP M aterial • Industry Standard 2.00 x 1.25 mm Package
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HSMX-S660
HSMX-S670
HSMX-S690
HSMX-S660.
5965-1216E
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Untitled
Abstract: No abstract text available
Text: WhoI HEWLETT m LEM P A C K A R D T-18/4 5 mm High Intensity LED Lamps Technical Data Features * Reliable and Rugged • Available on Tape and Reel * High Intensity * Choice of 3 Bright Colors High Efficiency Red Yellow High Performance Green • Popular T -l3/4 Diameter
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T-18/4
T-13A
MP3315
D013flD3
HLMP-351X
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41411
Abstract: transistor 41 74t transistor 45 f 122
Text: Thal h e w le tt mL'fiÆ PACKARD « Surface M ount Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41411 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.8 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz
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AT-41411
AT-41411
OT-143
Rn/50
0017b2fl
41411
transistor 41 74t
transistor 45 f 122
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5T74
Abstract: IM3642-16L
Text: Whpt H E W L E T T mLHM P A C K A R D C-Band Internally-M atched Power GaAs FETls IMFETs 3.6 to 4.2 GHz111 Technical Data IM3642-4L IM3642-16L Features Description • High Output Power: The H ew lett-Packard IM3642-xL internally-m atched GaAs pow er FET, or IMFET family is de
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IM3642-4L
IM3642-16L
IM3642-4L:
IM3642-16L:
IM3642-xL
5965-7393E
D0171bD
5T74
IM3642-16L
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Untitled
Abstract: No abstract text available
Text: Whp1H EW LETT milKM PACKARD Avantek Products Surface Mount Cascadable Amplifier 10 to 500 MHz Technical Data PPA-557 Features Description Pin Configuration • F requency Range: 10 to 500 MHz The PPA-557 high-power, low voltage, medium gain RF amplifier containing discrete HP transistors
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PPA-557
PPA-557
PP-38
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AT-00535
Abstract: Silicon Bipolar Transistor MICRO-X
Text: HEWLETT-PACKARD/ CMPNTS blE » HEW LETT PA C K A R D • AT-00535 Up to 4 GHz General Purpose Silicon Bipolar Transistor 35 mfcro-X Package Features • • 4M47SÄM GGGt177li 3S3 « H P A 16.0 dBm typical Pi dsat 2.0 GHz 10.5 dB typical Gi dBat 2.0 GHz • 2.5 dB typical NFo at 2.0 GHz
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4M47564
AT-00535
AT-00535
Silicon Bipolar Transistor MICRO-X
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