44N50 Search Results
44N50 Price and Stock
onsemi FDH44N50MOSFET N-CH 500V 44A TO247-3 |
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FDH44N50 | Tube | 489 | 1 |
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FDH44N50 | Bulk | 16 Weeks, 4 Days | 1 |
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FDH44N50 | 7,348 |
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FDH44N50 | Bulk | 417 | 1 |
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FDH44N50 | 270 | 1 |
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FDH44N50 | 450 |
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FDH44N50 | 11 Weeks | 450 |
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FDH44N50 | 300 | 12 Weeks | 30 |
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FDH44N50 | 30 | 13 Weeks | 30 |
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FDH44N50 | 30 | 1 |
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Littelfuse Inc IXFT44N50PMOSFET N-CH 500V 44A TO268 |
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IXFT44N50P | Tube | 300 | 1 |
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IXFT44N50P | Bulk | 300 |
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Littelfuse Inc IXFR44N50PMOSFET N-CH 500V 24A ISOPLUS247 |
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IXFR44N50P | Tube | 289 | 1 |
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IXFR44N50P | Bulk | 300 |
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IXFR44N50P | Bulk | 8 Weeks | 300 |
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Littelfuse Inc IXFH44N50Q3MOSFET N-CH 500V 44A TO247AD |
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IXFH44N50Q3 | Tube | 138 | 1 |
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IXFH44N50Q3 | Bulk | 300 |
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IXFH44N50Q3 | Bulk | 8 Weeks | 300 |
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Littelfuse Inc IXFK44N50PMOSFET N-CH 500V 44A TO264AA |
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IXFK44N50P | Tube | 94 | 1 |
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IXFK44N50P | Bulk | 8 Weeks | 300 |
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44N50 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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123B16
Abstract: 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q
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44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1 123B16 44N50 48N50 48N50Q IXFN48N50Q IXFN 48n50q | |
44N50Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions |
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ISOPLUS247TM 44N50P 405B2 44N50 | |
44N50P
Abstract: ISOPLUS247
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44N50P ISOPLUS247TM 03-21-06-B 44N50P ISOPLUS247 | |
48N50
Abstract: 48N50Q 44N50
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44N50Q 48N50Q 44N50 48N50 OT-227 E153432 48N50 48N50Q 44N50 | |
48N50Q
Abstract: 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q
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ISOPLUS247TM, 44N50Q 48N50Q 247TM E153432 IXFR44N50Q: IXFR48N50Q: 728B1 48N50Q 44N50 0NAL IXFR44N50Q IXFR48N50Q 44N50Q | |
ot 409
Abstract: SMD-264 K44N50
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OCR Scan |
44N50 48N50 48N50 Cto150 OT-227 E153432 ot 409 SMD-264 K44N50 | |
44N50
Abstract: 48N50 48N50Q ixys ixfk 44n50
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48N50Q 44N50Q 247TM 44N50 48N50 ixys ixfk 44n50 | |
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet |
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ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q: | |
44n50
Abstract: 44N50P IXFH44N50P
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44N50P 405B2 IXFH44N50P 44n50 44N50P | |
Contextual Info: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P = 500 V = 44 A Ω ≤ 140 mΩ ≤ 200 ns VDSS ID25 RDS on trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS |
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44N50P O-247 O-264 IXFH44N50P 03-21-06-B | |
Contextual Info: PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω ≤ 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM |
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44N50P 03-21-06-B | |
ixys ixfk 44n50
Abstract: DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 48N50 SMD-264
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44N50/50S 48N50/50S 44N50 48N50 48N50 ixys ixfk 44n50 DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 SMD-264 | |
Contextual Info: HiPerFETTM Power MOSFETs VDSS TO-264 AA IXFK Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C 500 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 500 V VGS Continuous ±20 ±20 V VGSM Transient ±30 ±30 V ID25 TC = 25°C 44N50 |
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44N50 48N50 48N50 O-264 | |
Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS IXFN 44N50Q IXFN 48N50Q trr ≤ 250 ns Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 44N50 48N50 |
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44N50Q 48N50Q 44N50 48N50 OT-227 E153432 728B1 123B1 | |
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Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS IXFE 44N50Q IXFE 48N50Q ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions |
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44N50Q 48N50Q 227TM 728B1 123B1 728B1 | |
48N50Q
Abstract: s 404 p
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44N50Q 48N50Q 728B1 123B1 728B1 065B1 48N50Q s 404 p | |
IXFH44N50P
Abstract: 44n50p ixfh 44n50p C4455 IXFK44N50P
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44N50P O-247 IXFH44N50P 03-21-06-B 44n50p ixfh 44n50p C4455 IXFK44N50P | |
48N50Q
Abstract: IXFN48N50Q 44N50
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44N50Q 48N50Q 227TM IXFN48N50Q 44N50Q: 48N50Q: 48N50Q 44N50 | |
Contextual Info: VDSS HiPerFETTM Power MOSFETs ID25 RDS on IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW Q-CLASS trr £ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data PLUS 247TM (IXFX) |
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48N50Q 44N50Q 247TM O-264 44N50 48N50 | |
48N50
Abstract: TAB 429 H 44n50 ixys ixfk 44n50 ixys 44n50 SMD-264 931 diode smd D-68623 IXFK48N50 smd diode 513
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44N50/50S 48N50/50S 44N50 48N50 44N50 48N50 O-264 SMD-264 TAB 429 H ixys ixfk 44n50 ixys 44n50 SMD-264 931 diode smd D-68623 IXFK48N50 smd diode 513 | |
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ |
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44N50P 405B2 | |
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM, Q-Class VDSS IXFR 44N50Q IXFR 48N50Q ID25 RDS on 500 V 34 A 120 mW 500 V 40 A 100 mW trr £ 250 ns (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet |
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ISOPLUS247TM, 44N50Q 48N50Q 48N50Q IXFR44N50Q: | |
Contextual Info: Advance Technical Information HiPerRFTM Power MOSFETs ISOPLUS247TM F-Class: MegaHertz Switching IXFR 44N50F VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C |
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ISOPLUS247TM 44N50F 247TM E153432 | |
44N50PContextual Info: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ |
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44N50P 405B2 44N50P |