44RB203 Search Results

Contextual Info: LIE D I 44Rb203 0023723 HB56B48 Series T33 * H I T 2 HITACHI/ LOGIC/ARRAYS/MEM 4,194,304-Word x 8-bit High Density Dynamic RAM Module The HB56B48 is a 4M x 8 dynamic RAM module, m ounted e ig h t 4-M b it D RA M H M 514101A S se a le d in S O J p a c k a g e . A n o u tlin e o f th e

Contextual Info: HM51441OB/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi H M 51441 OB/BL is a CMOS dynamic R A M o rg a n iz e d 1,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1441 OB/BL h as re a liz e d h ig h e r d en sity , h ig h e r p e rfo rm a n c e and v a rio u s fu n c tio n s by

HM514170CLJ8

Abstract: HM514170CLJ-8 HM514170CJ7
Contextual Info: HM514170C Series HM51S4170C Series 262,144-word x 16-bit Dynamic Random Access Memory HITACHI Rev. 1.0 Jul. 21, 1995 Description The Hitachi HM 51 S 4170C are CMOS dynamic RAM organized as 262,144-word x 16-bit. HM51(S)4170C have realized higher density, higher performance and various functions by employing 0.8 p.m CMOS process

Contextual Info: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,

Contextual Info: HB56SW864ES-6/7 8,388,608-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-776A Z Rev. 1.0 Apr. 23,1997 Description The HB56SW864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: H B 5 6 U W 1 6 7 3 E - 6 A /7 A 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-575A Z Rev. 1.0 Dec. 24, 1996 Description The HB56UW1673E belongs to the 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The

Contextual Info: HM5118160I Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-756A Z Rev. 1.0 Mar. 10, 1997 Description The Hitachi HM 51181601 Series are CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160I

AR6F

Contextual Info: HB56SW464DB Series 4,194,304-Word x 64-Bit High-Density Dynamic RAM Module HITACHI ADE-203-758A Z Rev. 1.0 March 20,1997 Description The HB56SW464DB is a 4 Mbit x 64 dynamic RAM small-outline dual in-line memory module (SODIMM), mounted in 16 pieces of 16-Mbit DRAM (HM51W16405) sealed in a TCP package and one

HM514260DJI-7

Abstract: HM514260DJI-8 HM514260DLJI-7 HM514260DLJI-8 SC-640 Hitachi Scans-001
Contextual Info: HM514260DI Serie 262,144-word x 16-bit Dynamic RAM HITACHI ADE-203-710A Z Rev. 1.0 Feb.13, 1997 Description The Hitachi HM514260DI is a CMOS dynamic RAM organized as 262,144 words x 16 bits. The HM514260DI realizes higher density, higher performance, and various functions by employing 0.8 (am

Contextual Info: HB56AW873E Series 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-685A Z Rev. 1.0 Nov. 28, 1996 Description The HB56AW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HB52R168DB Series 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components HITACHI ADE-203-886 (Z) Preliminary, Rev. 0.0 F eb .6,1998 Description The HB52R168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line

Contextual Info: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699A Z Rev. 1.0 Dec. 27,1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1

3240B

Contextual Info: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-381B Z Rev. 2.0 Jan. 7, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance.

Contextual Info: HM5164805A Series HM5165805A Series 8388608-word x 8-bit Dynamic Random Access Memory HITACHI ADE-203-458 A (Z) Preliminary Rev. 0.1 Apr. 30, 1996 Description The Hitachi HM5164805A Series, HM5165805A Series are CMOS dynamic RAMs organized 8,388,608word x 8-bit. They employ the most advanced CMOS technology forhighperformanceandlowpower. The

Contextual Info: HB56A132 Series 1,048,576-word x 32-Bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1,1995 Description The H B56A132 is a 1 M x 32 dynamic RAM m odule, mounted 8 pieces o f 4-M bit DRAM (HM514400CS/CLS) sealed in SOJ package. An outline of the HB56A132 is 72-pin single in-line package.

HN62448NI

Abstract: d0344 44-B50
Contextual Info: HN62448NI Series 524288-word x 16-bit/l048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-771A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62448NI series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. As it has realized high speed normal access 100 ns and page mode

Contextual Info: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic RAM HITACHI ADE-203-453 Z Preliminary - Rev. 0.4 Apr. 28, 1997 Description The Hitachi HM5164165A Series, HM5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word x 16-bit. They employ the most advanced CMOS technology for high performance and

Contextual Info: HB56A432 Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56A432 is a 4 M x 32 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM HM5117400BS sealed in SOJ package. An outline o f the HB56A432 is 72-pin single in-line package. Therefore, the

HN27C4096AHCC-85

Abstract: HN27C4000 HN27C4096AHG-85 27c4096a HN27C4096 HN27C4096AHCP-10 HN27C4096AHG Hitachi Scans-001
Contextual Info: HN27C4096AH Series Preliminary 4M 256K x 16-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C4096AH is a 4-Megabit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 262,144 x 16-bits. The HN27C4096AH features fast address access times of 85

Contextual Info: HN58V65A Series HN58V66A Series 8192-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-539 Z Preliminary Rev. 0.1 Nov. 12, 1996 Description The Hitachi HN58V65A series and HN58V66A series are a electrically erasable and programmable EEPROM’s organized as 8192-word x 8-bit. Employing advanced MNOS

Z1132

Contextual Info: HM5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118165B offers Extended

Edd 44

Abstract: HM514405C HM514405CS-6 HM514405CS-7 HM514405CS-8 2B4D Hitachi Scans-001
Contextual Info: H M 5 1 4 4 0 5 C Preliminary S e r ie s 1,048,576-w ord x 4-bit Dynam ic Random Access M em ory HITACHI The H itachi H M 514405C is a CMOS dynam ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 w ords x 4 b its. HM 514405C has realized higher density, higher performance and various functions by employing

M514400C

Abstract: M514400 m5144 HM514400C HM514400CL Hitachi Scans-001
Contextual Info: HM514400C/CL Series 1,048,576-word x 4-bit D yn am ic Random A c c e s s Memory HITACHI The H itachi H M 514400C is a CM OS dynam ic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w ord x 4 -b it. HM 514400C has realized higher density, higher performance and various functions by employing

Contextual Info: HN29VT800 Series, HN29VB800 Series 1048576-word X 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-781A Z Rev. 1.0 Apr. 25, 1997 Description The Hitachi HN29VT800 Series, HN29VB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS R ash Memory with DINOR (Divided bitline NOR) type memory cells, that realize programming and erase