4500A Search Results

Contextual Info: TM 4500A DYNAMIC RAM CONTROLLER D 2 6 7 4 . JA N U A R Y 1982 TM S 4500A Controls Operation of 8K, 16K, 32K , and 64 K Dynam ic RAMs CLK ROY One Package Contains Address M ultiplexer, Refresh Control, and Timing Control • RENI CS ALE Directly Addresses and Drives Up to 2 5 6 K

DF685

Abstract: DS4303-1
Contextual Info: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability

DCR4500A36

Abstract: DCR4500A40 DCR4500A42 DS5942-1
Contextual Info: 4500A42 Phase Control Thyristor Preliminary Information DS5942-1.0 June 2009 LN 26810 KEY PARAMETERS FEATURES VDRM IT(AV) ITSM dV/dt* dI/dt Double Side Cooling High Surge Capability 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available

Contextual Info: S i GEC P L E S S E Y SEPTEMBER 1995 SEMICONDUC TOR S DS4303-1.2 DF685 FAST RECOVERY DIODE KEY PARAMETERS 4500V 445A Jf AV 4500A FSM 650(lC Or APPLICATIONS vRRM • Snubber Diode For GTO Applications. 5|iS FEATURES ■ Double Side Cooling. ■ High Surge Capability.

4501T

Abstract: 4501-T 4507T 4508T 4511t
Contextual Info: 3/16 HEX MALE-FEMALE STANDOFFS Order Code: code is blank Finishes: [How to create part numbers] [Material Specifications] select a finish SELECT PART NO. LENGTH SELECT PART NO. LENGTH SELECT PART NO. LENGTH CODE THREAD 4500A 5/32 4509 3/4 4515 1-1/8 256

Contextual Info: 4500A42 Phase Control Thyristor Preliminary Information DS5942-3 July 2012 LN 29654 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available

DCR4500A42

Contextual Info: 4500A42 Phase Control Thyristor DS5942-4 April 2013 LN30255 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available APPLICATIONS

DF451

Abstract: DF685
Contextual Info: DF685 DF685 Fast Recovery Diode Replaces January 2000 version, issue DS4303-2.0 DS4303-3.0 June 2004 APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability

Contextual Info: 4500A42 Phase Control Thyristor DS5942-4 April 2013 LN30255 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available APPLICATIONS

Contextual Info: @ M ITEL DF685 Fast Recovery Diode S E M IC O N D U C T O R Supersedes Septem ber 1995 version, DS4303 - 1.2 DS4303 - 1.3 March 1998 APPLICATIONS KEY PARAMETERS • Snubber Diode For GTO Applications. ^rrm 4500V ^f av 445A 'fsm 4500A Qr 650(iC trr 5^is FEATURES

Contextual Info: SEPTEMBER 1995 DF685 DS4303-1.2 DF685 FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs • Snubber Diode For GTO Applications. FEATURES ■ Double Side Cooling. ■ High Surge Capability. ■ Low Recovery Charge.

Contextual Info: M ITEL DF685 Fast Recovery Diode SEMICONDUCTOR Supersedes Septem ber 1995 version, DS4303 - 1.2 DS4303 - 1.3 March 1998 APPLICATIONS • KEY PARAMETERS 4500V 445A Jf AV 4500A FSM 650|lC Q, VRRM S nubber Diode For GTO Applications. 5(iS FEATURES ■ Double Side C ooling.

GTO thyristor 4500V 4000A

Abstract: DS4303-1 AN4506 AN4839 AN4853 DF685
Contextual Info: DF685 DF685 Fast Recovery Diode Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000 KEY PARAMETERS VRRM 4500V IF AV 445A IFSM 4500A Qr 650µC trr 5µs APPLICATIONS • Snubber Diode For GTO Applications FEATURES ■ Double Side Cooling ■ High Surge Capability

DCR4500A36

Abstract: DCR4500A40 DCR4500A42
Contextual Info: 4500A42 Phase Control Thyristor Preliminary Information DS5942-2 August 2010 LN 27491 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available

4500a

Abstract: APT0502 APT0601 APTGF300DU120G
Contextual Info: APTGF300DU120G Dual Common Source NPT IGBT Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 VCES = 1200V IC = 300A @ Tc = 80°C Q2 G1 G2 E1 E2 E G1 C1 E C2 E1 Features • Non Punch Through NPT FAST IGBT

Contextual Info: TOSHIBA TENTATIVE 1500JXH22 T O SH IBA FAST RECO V ERY DIO D E SILICON DIFFUSED TYPE 1500JXH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIO NS • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling 2 - 0 5 .2 + 0.2 : V r r m ~ 6000V

Contextual Info: TP3 www.vishay.com Vishay Sprague Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT Molded Case, High Performance, Automotive Grade FEATURES • AEC-Q200 qualified • Low ESR • 100 % surge current tested B, C, D, and E case sizes • High ripple current carrying capability

4500a

Abstract: GA170DL
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 300 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 300 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

Contextual Info: TOSHIBA SG4500GXH25 TENTATIVE T O SH IBA GATE TURN-OFF THYRISTOR SG4500GXH25 INVERTER APPLICATIO N Repetitive Peak Off-State Voltage : V n^ivr—4500V Note 1 Repetitive Peak Reverse Voltage : V r r ]V[ = 4000V R.M.S On-State C urrent : I t (RMS) ~ 3000A

Contextual Info: 1500JXH22 T O SH IB A TENTATIVE TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 5QQJXH22 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling : V r r ]vi = 6000V : Ip AV = 1500A MAXIMUM RATINGS (Ta = 25°C)

VIPER L2A RoHS

Abstract: Viper L2A schematic diagram offline UPS ZO 103 TRIAC PL3150-L10 Wiegand schematic PL3120-E4T10 upc 3842 SCR C103 TRANSISTOR SUBSTITUTION DATA BOOK
Contextual Info: PL 3120 / PL 3150® Power Line Smart Transceiver Data Book @ ® Ve r s i o n 2 005-0154-01C Echelon, LON, LONWORKS, LonBuilder, NodeBuilder, LonManager, LonTalk, Neuron, LONMARK, 3120, 3150, the Echelon logo, and the LONMARK logo are registered trademarks of Echelon Corporation. LonMaker, LNS, i.LON, ShortStack, and LonSupport are trademarks of

Contextual Info: Date:- 7 May, 2003 Data Sheet Issue:- 1 Rectifier Diode Type W2624NC160 to W2624NC250 Old Type No.: SW16-25CXC11C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 1600-2500 V VRSM Non-repetitive peak reverse voltage, (note 1)

A30QS400-4

Abstract: A30QS604 A30QS800-4 300 volt 5 ampere transistor 4500a A30QS125-4 A30QS7 A30QS600 datasheet of blown fuse indicator 250 volt to 600 volt fuse
Contextual Info: AMP-TRAP –Form 101 A30QS SEMICONDUCTOR PROTECTION FUSES A30QS Amp-Trap® Semiconductor Protection fuses are intended for the protection of Power Semiconductors such as Diodes, Phase Control SCR’s and other Power Semiconductor devices. The A30QS is recommended for

4500a

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 300 GA 170 DLS 07.05.1998 BSM 300 GA 170 DLS vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung