450UM Search Results
450UM Price and Stock
ROHM Semiconductor RB450UMFHTLDIODE SCHOTTKY 40V 100MA UMD3F |
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RB450UMFHTL | Digi-Reel | 2,575 | 1 |
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RB450UMFHTL |
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RB450UMFHTL | Cut Tape | 5 |
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ROHM Semiconductor RB450UMTLDIODE SCHOTTKY 40V 100MA UMD3F |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RB450UMTL | Cut Tape | 282 | 1 |
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RB450UMTL | 1,236 |
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450UM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TC8600F
Abstract: 1126to PHOTO INTERRUPT ROTATING SPEED SENSOR 360rpm magnetic head FDD
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TC8600F TC8600F TC8600F, 1126to PHOTO INTERRUPT ROTATING SPEED SENSOR 360rpm magnetic head FDD | |
PLX PEX8112-AA66BI
Abstract: PEX8112 PEX8112-AA66BIF plx 8112 PEX8112-AA66FBIF PEX8112-AA66FBI PEX8112-AA66FBI F pex 8112 PEX8112AA66 1018H
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8112-AA PLX PEX8112-AA66BI PEX8112 PEX8112-AA66BIF plx 8112 PEX8112-AA66FBIF PEX8112-AA66FBI PEX8112-AA66FBI F pex 8112 PEX8112AA66 1018H | |
Contextual Info: K4S643234E-SE/N CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2.5V Extended Temperature 90-Ball FBGA Revision 1.8 April 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.8 April 2002 |
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K4S643234E-SE/N 32bit 90-Ball 2Mx32 | |
uaf4000
Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
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20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR | |
LX3050
Abstract: LX3052 InGaAs array 1550nm
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LX3050/52 LX305X LX3050 LX3052, 50ohm LX3052 InGaAs array 1550nm | |
Contextual Info: epitex Opto-Device & Custom LED MOLD LED LAMP L850F-06-45 L850F-06-45 LN850F-06-45 Infrared LED Lamp for High Current Drive L850F-06-45 is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 850nm. |
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L850F-06-45 LN850F-06-45) L850F-06-45 850nm. 450umx450um 850nm 21min. 100mA, | |
L870F-04-45
Abstract: 870nm
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L870F-04-45 LN870F-04-45) L870F-04-45 870nm. 450umà 450um 870nm 100mA, | |
Microsemi LX3055
Abstract: photo diode 10 Gbps LX3055 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode
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LX3055 1310nm 1550nm LX3055 Microsemi LX3055 photo diode 10 Gbps 1550nm photodiode 1.6 Ghz VCSEL 1550 nm 1 Gbps 1550nm VCSEL InGaAs Photodiode 1550nm PHOTO diode | |
K4S643234EContextual Info: K4S643234E-S T CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(2.5V) Extended Temperature TSOP/90-Ball FBGA Revision 1.7 November 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.7 (Nov. 2001) |
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K4S643234E-S 32bit TSOP/90-Ball 2Mx32 K4S643234E | |
Contextual Info: Data Sheet No.PD94724 IR3638SPbF HIGH FREQUENCY SYNCHRONOUS PWM BUCK CONTROLLER FOR TRACKING APPLIACTIONS Features Description • • • • • • The IR3638 controller IC is designed to provide a simple synchronous Buck regulator for on-board DC to DC applications in a 14-pin SOIC. The |
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PD94724 IR3638SPbF IR3638 14-pin 400kHz IRF8910 2x22uF 1x470uF, | |
Contextual Info: E nmgics @ ATA121302D1C 1.25 Gb/s Transimpedance Amplifier Advanced Product Information Rev 0 FEATURES APPLICATIONS • 1.25 Gb/s Differential Output TIA • Gigabit Ethernet 1.250 Gb/s • Automatic Gain Control • Fibre Channel (1.064 Gb/s) ELECTRICAL CHARACTERISTICS0 } (TA = 25 °C, V DD =+5.0V + 10%) |
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ATA121302D1C ATA121302D1C | |
diode 0 dB 1550nm
Abstract: LX3050 LX3052 photo diode array amplifier 1310 vcsel photo diode array InGaAs AW32 VCSEL flip InGaAs array 1550nm
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LX3050/52 LX305X L14-898-8121, LX3050/2 diode 0 dB 1550nm LX3050 LX3052 photo diode array amplifier 1310 vcsel photo diode array InGaAs AW32 VCSEL flip InGaAs array 1550nm | |
L870F-05-45
Abstract: 870nm
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L870F-05-45 LN870F-05-45) L870F-05-45 870nm. 450umà 450um 870nm 100mA, | |
L870F-06-45
Abstract: 870nm
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L870F-06-45 LN870F-06-45) L870F-06-45 870nm. 21min. 450umà 450um 870nm | |
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PEX8111
Abstract: L2PMU PEX8111-BB66BCF 161-ball PEX8111-BB66FBC 8111AS re-enumeration 256 FBGA 17 X 17 PLX
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8111BB PEX8111RDK-R 8111BB PEX8111 L2PMU PEX8111-BB66BCF 161-ball PEX8111-BB66FBC 8111AS re-enumeration 256 FBGA 17 X 17 PLX | |
F1-9229-ST
Abstract: F1-9229-CH dust cap LC F1-1080-FC F1-0061 FC 0137 F1-0061F Zirconia SPLIT ferrules dust cap F1830
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250ym 450pm 650yrn_ 20jjm^ F1-1080-SCAPC F1-9229-CH F1-9229-ST F1-90010 F1-0125 dust cap LC F1-1080-FC F1-0061 FC 0137 F1-0061F Zirconia SPLIT ferrules dust cap F1830 | |
TC8600F
Abstract: floppy disk motor head step magnetic head FDD Fdd spindle motor circuit 300 Fdd spindle motor circuit floppy disk spindle controller MAGNETIC HEAD circuit MAGNETIC Write HEAD circuit mtron Stepping Motor Toshiba
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TC8600F C86OOF TC8600F TC8600F, TLCS-47 sy223 floppy disk motor head step magnetic head FDD Fdd spindle motor circuit 300 Fdd spindle motor circuit floppy disk spindle controller MAGNETIC HEAD circuit MAGNETIC Write HEAD circuit mtron Stepping Motor Toshiba | |
TGA4521-EPU
Abstract: TGA4521
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TGA4521-EPU TGA4521-EPU TGA4521 | |
Contextual Info: PRODUCT GUIDE B. New LCD Driver 1C Code Information S6XXXXXXXX - X X X X 1 (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) (14) (15) (1) System LSI (s) (2) Large Classification: LCD Driver IC (6) (3) Small Classification: A; B; C; D STN (Character Type) |
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145um± 180um 200um 220um 180um± 250um± 300um 280um± 300um± 320um | |
hx8312Contextual Info: DOC No. HX8312-A-DS HX8312-A 240 RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver Version 05 March, 2006 HX8312-A 240 RGB x 320 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents March, 2006 |
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HX8312-A-DS HX8312-A 123March hx8312 | |
L850F-06-45
Abstract: 850nm
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L850F-06-45 L850F-06-45 850nm. 21min. 450umx450um 850nm J-6512. | |
L870F-02-45
Abstract: 870nm
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L870F-02-45 L870F-02-45 870nm. 450umà 450um 870nm 100mA, | |
diode varicap BB 112
Abstract: SMD TRANSISTOR MARKING 02N toshiba smd marking code transistor SOT23-6 MARKING 02n smd code marking NEC rf transistor transistor smd marking CODE Wb smd transistor m29 sot343 UXA23465 RF LNB C band chipset smd transistor M26 sot23
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BFU725F diode varicap BB 112 SMD TRANSISTOR MARKING 02N toshiba smd marking code transistor SOT23-6 MARKING 02n smd code marking NEC rf transistor transistor smd marking CODE Wb smd transistor m29 sot343 UXA23465 RF LNB C band chipset smd transistor M26 sot23 | |
K4S643234EContextual Info: K4S643234E-TC CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2.5V Commercial Temperature 86-TSOP Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 (Oct. 2001) |
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K4S643234E-TC 32bit 86-TSOP K4S643234E-80/10 450um 350um K4S643234E |