450V MOSFET Search Results

ZXMN0545G4TA

Abstract: ZXMN0545G4 ZXMN0545G4TC
Contextual Info: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

Contextual Info: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

TBA 611

Contextual Info: ZXMN0545G4 ADVANCE INFORMATION 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high

Q1NC45

Abstract: Q1NC45R D2NC45 JESD97 STD2NC45-1 STQ1NC45R-AP
Contextual Info: STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD2NC45-1 450V <4.5Ω 1.5A 30W STQ1NC45R-AP 450V <4.5Ω 0.5A 3.1W • 3 Extremely high dv/dt capability ■ 100% avalanche tested

Contextual Info: STD2NC45-1 STQ1NC45R-AP N-channel 450V - 4.1Ω - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STD2NC45-1 450V <4.5Ω 1.5A 30W STQ1NC45R-AP 450V <4.5Ω 0.5A 3.1W • 3 Extremely high dv/dt capability ■ 100% avalanche tested

RFM10N50

Abstract: AN7254 AN7260 RFM10N45 TA17435
Contextual Info: [ /Title RFM10 N45, RFM10 N50 /Subject (10A, 450V and 500V, 0.600 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdfmark RFM10N45, RFM10N50 Semiconductor 10A, 450V and 500V, 0.600 Ohm,

TA17425

Abstract: AN7254 AN7260 RFM6N45 RFP6N45 RFP6N50 TB334 20KW motor
Contextual Info: [ /Title RFM6 N45, RFP6N4 5, RFP6N5 0 /Subject (6A, 450V and 500V, 1.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM6N45, RFP6N45, RFP6N50 Semiconductor 6A, 450V and 500V, 1.250 Ohm,

pj 996 diode

Abstract: HV9106 48V DC to 12v dc 40 amp converter circuit diagram smps circuit diagram HV9106P 48V DC to 12v dc converter circuit diagram 40 amp amplifier diagram n mosfet depletion 600V A510K HV9106PJ
Contextual Info: HV9106/HV9109 HV9106 HV9109 Preliminary High-Voltage Switchmode Controllers with MOSFET Ordering Information MOSFET Switch +VIN Package Outlines BVDSS RDS ON Min Max Feedback Voltage 600V 20Ω 12V 450V ±1% 49% HV9106P HV9106PJ 600V 20Ω 12V 450V ±1% 99%

Contextual Info: RFH10N45, RFH10N50 Semiconductor October 1998 Data Sheet File Number 1629.2 Features 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs • 10A, 450V and 500V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such

LM 4585

Abstract: sml451r1gn
Contextual Info: SEP1ELAB PLC 0133107 t>OE D000Ô3Ô INI 525 •SMLB ä MOS POWER -13 SML5085GN SML4585GN SEME LAB 500V 450V 500V 450V SML501R1GN SML451R1GN 0.8512 7.0A 7.0A 0.85Q 1.1 on 1.1 on 6.5A 6.5A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

mosfet 1000A

Abstract: Preconditioning MOSFET
Contextual Info: DMOS Application Note AN–D1 DMOS FET Electrical Performance .6V VGS = 6V VGS = 4V VGS = 2V VGS = 0V .6V 450V 450V 1.5 1.35 VGS th (normalized) The electrical behavior of MOSFETs has been explained by numerous authors. A different, and nontraditional way of viewing

irf430

Contextual Info: IRF430, IRF431, IRF432, IRF433 IHARRI5 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 4.0A and 4.5A, 450V and 500V, These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

rfm10n50

Contextual Info: W vys S RFM10N45, RFM10N50 Semiconductor y 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 10A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such

IRF420

Abstract: IRF422 TB334 IRF421 IRF423
Contextual Info: IRF420, IRF421, IRF422, IRF423 Semiconductor 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

5040bn

Abstract: sml4540bn SML5040BN
Contextual Info: _ bDE SEHELAB PLC Ô1331Û7 » GGD0b32 E45 « S I I L B INI MOS POWER 4 SML5040BN SML4540BN SML5050BN SML4550BN SEME LAB 500V 450V 500V 450V 16.0A 16.0A 14.0A 14.0A 0.40Q 0.40Q 0.50Q 0.5012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: if* ? S IRF430, IRF431, IRF432, IRF433 Semiconductor y y 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 4.0A and 4.5A, 450V and 500V, • High Input Impedance These are N-Channel enhancement mode silicon gate

5085CN

Abstract: sml451r1cn SML5085CN
Contextual Info: SEMELAB PLC hOE D Ô1331Ô7 OOGDfllD mib « S M L B — MOS POWER 4 iFFi SEME SML5085CN SML4585CN SML501R1CN SML451R1CN LAB 500V 450V 500V 450V 8.0A 0.85Q 8.0A 0.8512 7.0A 1.10Q 7.0A 1.1 OQ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

sml4540an

Abstract: sml4550an 15tr package unit
Contextual Info: SEMELAB PLC bOE D 0133167 DD0G7Sf l 432 IS MLB MOS POWER = INI 4 r r = " T v S * - 15 SEME SML5040AN SML4540AN SML5050AN SML4550AN LAB 500V 450V 500V 450V 14.5A 14.5A 13.0A 13.0A 0.40Q 0.40Q 0.500 0.500 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

sml5040cn

Abstract: SML5040 sml4540cn sml4550cn
Contextual Info: SEMELAB PLC bO E Ö1331Ö7 ODGOflOb TIS • SMLB D INI 4 MOS POWER iF F i INI SEME ''P 3 A - I3 SML5040CN SML4540CN SML5050CN SML4550CN LAB 500V 450V 500V 450V 13.0A 13.0A 11.5A 11.5A 0.40ft 0.40ft 0.50ft 0.50ft N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: IRF830, IRF831, IRF832, IRF833 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.0A and 4.5A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

RFH10N50

Abstract: RFH10N45 TA17435 TB334
Contextual Info: RFH10N45, RFH10N50 Semiconductor Data Sheet 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs October 1998 File Number 1629.2 Features • 10A, 450V and 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.600Ω (RFH10 power field effect transistors designed for applications such

4525 GE

Abstract: sml4525hn 5025HN
Contextual Info: SEHELAB PLC bOE ]> • 0133107 DDDDflSfl 313 H S flL B MOS POWER ËFFË 4 'T - V t - 1 5 INI SML5025HN SML4525HN SML5030HN SML4530HN SEME LAB 500V 450V 500V 450V 21.0A 21.0 A 19.0A 19.0A 0.25ft 0.2512 0.30ft 0.30ft N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Contextual Info: HV9120 HV9123 High-Voltage Current-Mode PWM Controller Ordering Information +VIN Max Duty Cycle Package Options 16 Pin 20 Pin SOIC Plastic PLCC Min Max Feedback Accuracy 10V 450V <+2% 49% HV9120C HV9120P HV9120NG HV9120PJ HV9120X 10V 450V <+2% 99% HV9123C

Contextual Info: HV9106 HV9109 Supertex inc. P re lim in a r y High-Voltage Switchmode Controllers with MOSFET Ordering Information MOSFET Switch +v,N Min Max 16 Pin Plastic DIP 20 Pin Plastic PLCC 600V 20Ì2 12V 450V ±1% 49% HV9106P HV9106PJ 600V 2012 12V 450V ±1% 99% HV9109P