463A Search Results

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F 6 DATE 28 APR 2005 1 SCALE 4:1 D −X− 6 5 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

Contextual Info: Luckylight 6.22mmx3.68mm Rectangular Type Amber LED Technical Data Sheet Part No.: LL-463ADS Spec No.: 463 Rev No: V.3 Date: Nov./28/2006 Approved: ZHOU Checked: Wu Drawn: Shu Lucky Light Electronics Co., Ltd. Page: 1 OF 7 http://www.luckylight.cn Luckylight

sot-36

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT–563, 6 LEAD CASE 463A–01 ISSUE O SCALE 4:1 A –X– 5 6 1 2 K 4 B –Y– 3 D EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 STYLE 2: PIN 1. 2. 3. 4. 5. 6. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI

463a

Contextual Info: Filename: tfs 463a.doc Version 1.4 VI TELEFILTER 01.03.2005 Filter specification TFS 463A 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: * Input: Output: 23 °C dBm 228 Ω | -1.25 pF 228 Ω | -1.25 pF Characteristics

SZNUP4114HMR6T1G

Abstract: MARKING D7 SOT363 MARKING d5 SOT363 marking X2 NUP4114HMR6T1G marking code p4 TSOP6 marking D3 TSOP-6
Contextual Info: NUP4114 Series, SZNUP4114HMR6T1G Transient Voltage Suppressors ESD Protection Diodes with Low Clamping Voltage http://onsemi.com The NUP4114 transient voltage suppressors are designed to protect high speed data lines from ESD. Ultra−low capacitance and high level

SBAS16DXV6T1G

Contextual Info: BAS16DXV6T1, BAS16DXV6T5, SBAS16DXV6T1G Dual Switching Diode Features http://onsemi.com • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements Pb−Free Packages are Available

bc 147 transistor

Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
Contextual Info: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits

Contextual Info: MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

NSBC113EPDXV6T1

Contextual Info: MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

BAV70DXV6T1

Abstract: BAV70DXV6T5
Contextual Info: BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode • Lead-Free Solder Plating http://onsemi.com MAXIMUM RATINGS EACH DIODE Rating Symbol Value Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc

BC847

Abstract: BC847CDXV6T1 BC847CDXV6T1G BC847CDXV6T5G BC848 BC848CDXV6T1 BC848CDXV6T1G
Contextual Info: BC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications.

Contextual Info: EMD4DXV6T1, EMD4DXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base

earth leakage circuit

Abstract: 15.927 Breaker FI 15.932 15.930
Contextual Info: FI EARTH LEAKAGE CIRCUIT BREAKERS FI compact Earth Leakage Circuit Breakers detect and interrupt earth ground faults. They are VDE approved for the European system of protecting people, animals, equipment and property from dangerous line-to-ground and shock

Contextual Info: MUN5316DW1, NSBC143TPDXV6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

Contextual Info: MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

NTZD3152PT1G

Abstract: NTZD3152P NTZD3152PT5G
Contextual Info: NTZD3152P Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 Features • • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices

Contextual Info: NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices

resistor

Abstract: PEMD4 PEMD13 Cross Reference resistor cross reference EMA8 PEMB10 PEMD6 NL17SZ02XV5T2 NL17SZ07XV5T2
Contextual Info: SOT5xx Cross Reference LOGIC MiniG LCX OVT Logic MiniGates ON ~ ~ ~ ~ NL17SZ00XV5T2 2 Input NAND 463B TC7SZ00AFE ~ ~ ~ ~ NL17SZ02XV5T2 2 Input NOR 463B TC7SZ02AFE ~ ~ ~ ~ NL17SZ04XV5T2 Single Inverter 463B TC7SZ04AFE ~ ~ ~ ~ NL17SZU04XV5T2 Unbuffered Inverter

Contextual Info: RP - Series RCCB Earth Leakage Circuit Breakers RCCb Series compact Earth Leakage Circuit Breakers detect and interrupt earth ground faults. They are VDE approved for the European system of protecting people, animals, equipment and proper ty from dangerous

NSBA113EDXV6T1

Abstract: NSBA114EDXV6T1 NSBA114EDXV6T5 NSBA114TDXV6T1 NSBA114YDXV6T1 NSBA124EDXV6T1 NSBA143TDXV6T1 NSBA144EDXV6T1
Contextual Info: NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

NUF2230XV6

Abstract: NUF2230XV6T1 NUF2230XV6T1G
Contextual Info: NUF2230XV6 2 Line EMI Filter with ESD Protection This device is a 2 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 900 MHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all

SL64G4B4M2E-A60

Contextual Info: 144-PIN SO-DIMMS SL64G4B4M2E-A60 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 15ns 104ns The SiliconTech SL64G4B4M2E-A60 is a 4M x 64 bits Dynamic RAM high density memory module. The SiliconTech

Contextual Info: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

Contextual Info: NSR0320XV6T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features http://onsemi.com • Low Forward Voltage − 0.35 V Typ @ IF = 10 mAdc • High Current Capability