464D Search Results
464D Price and Stock
Vishay Siliconix SI3464DV-T1-GE3MOSFET N-CH 20V 8A 6TSOP |
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SI3464DV-T1-GE3 | Digi-Reel | 2,773 | 1 |
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SI3464DV-T1-GE3 | Bulk | 20 |
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TDK Electronics B82464D6682M000FIXED IND 6.8UH 4.47A 0.04OHM SM |
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B82464D6682M000 | Digi-Reel | 835 | 1 |
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B82464D6682M000 | Cut Tape | 180 | 1 |
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TDK Electronics B82464D6302M000FIXED IND 3UH 5.77A 0.024OHM SMD |
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B82464D6302M000 | Cut Tape | 598 | 1 |
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TDK Electronics B82464D6472M000FIXED IND 4.7UH 5.08A 0.031OHM |
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B82464D6472M000 | Digi-Reel | 595 | 1 |
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B82464D6472M000 | Cut Tape | 595 | 1 |
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TDK Electronics B82464D6222M000FIXED IND 2.2UH 6.17A 0.021OHM |
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B82464D6222M000 | Digi-Reel | 550 | 1 |
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B82464D6222M000 | Cut Tape | 515 | 1 |
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464D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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hitachi sr uo
Abstract: csr bc7
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304-word 64-bit ADE-203-583 HB56SW 464DB 16-Mbit HM51W16405B) 24C02) HB56SW464DB hitachi sr uo csr bc7 | |
Contextual Info: Filename: tfs 464d.doc Version 1.0 VI TELEFILTER 09.11.2005 Filter specification TFS 464D 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: * Input: Output: 23 °C dBm 430 Ω | -4,4 pF 490 Ω | -3,8 pF Characteristics |
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Contextual Info: H B 5 6 S W 4 6 4 D B -6 B L /7 B L 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-651 Z Preliminary Rev. 0.0 Sep. 12,1996 Description The HB56SW 464DB is a 4M x 64 dynam ic RAM Sm all O utline D ual In-line M em ory M odule (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W16405B) sealed in TCP package and 1 piece |
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304-word 64-bit ADE-203-651 HB56SW 464DB 16-Mbit HM51W16405B) 24C02) HB56SW464DB | |
BAV99LT1
Abstract: MBRS130T3 MC33153 MHPM7A10S120DC3 PHPM7A10S120DC3 3 phase induction motor
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MHPM7A10S120DC3/D MHPM7A10S120DC3 BAV99LT1 MBRS130T3 MC33153 MHPM7A10S120DC3 PHPM7A10S120DC3 3 phase induction motor | |
BAV99LT1
Abstract: MBRS130T3 MC33153 MHPM7A25S120DC3 VF 3 phase converter IGBT General Purpose Fast Rectifier T/IRF 4648 hp
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MHPM7A25S120DC3/D MHPM7A25S120DC3 BAV99LT1 MBRS130T3 MC33153 MHPM7A25S120DC3 VF 3 phase converter IGBT General Purpose Fast Rectifier T/IRF 4648 hp | |
NIPPON CAPACITORSContextual Info: 464DBK Series 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI Description The H 464D BK is a lM x 64 X 4 banks Synchronous Dynamic RAM Small Outline Dual In-line M emory M odule S.O.DIM M , m ounted 8 pieces of 16-Mbit SDRAM (HM5216805TB) sealed in TCP |
OCR Scan |
HB526R464DBK 576-word 64-bit B526R464D 16-Mbit HM5216805TB) 24C02) 144-pin NIPPON CAPACITORS | |
Nippon capacitorsContextual Info: 464DB Series 32 MB EDO DRAM S.O.DIMM 4-Mword x 64-bit, 4 k Refresh, 1-Bank Module 16 pcs of 4 M x 4 Components HITACHI ADE-203-758C (Z) Rev. 3.0 Nov. 1997 Description The 464DB is a 4M x 64 dynamic RAM Small Outline Dual In-line Memory Module |
OCR Scan |
HB56SW464DB 64-bit, ADE-203-758C 16-Mbit HM51W16405) 24C02) 144-pin Nippon capacitors | |
Contextual Info: 464DB-6BLS/7BLS 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-652 Z Preliminary Rev. 0.0 Sep. 12, 1996 Description The 464DB is a 4M X 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W16405B) sealed in TCP package and 1 piece |
OCR Scan |
HB56SW464DB-6BLS/7BLS 304-word 64-bit ADE-203-652 HB56SW464DB 16-Mbit HM51W16405B) 24C02) | |
Contextual Info: HB56U264EJN Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Under development Description The HB56U264EJN belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. |
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HB56U264EJN 152-word 64-bit 16-Mbit HM5117805BJ) 24C02) | |
Contextual Info: 464DBK-10H/10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674A Z Rev. 1.0 Jun. 3, 1997 Description The 464DBK is a lM x 64 x 4 banks Synchronous Dynamic RAM Small Outline Dual in-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit SDRAM (HM5216805) sealed in TCP |
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HB526R464DBK-10H/10/12 576-word 64-bit ADE-203-674A HB526R464DBK 16-Mbit HM5216805) 24C02) 144-pin | |
MHPM7A20E60DC3
Abstract: BAV99LT1 MBRS130LT3 MC33153 XHPM7A20E60DC3
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MHPM7A20E60DC3/D MHPM7A20E60DC3 MHPM7A20E60DC3 BAV99LT1 MBRS130LT3 MC33153 XHPM7A20E60DC3 | |
BJE 80 diodeContextual Info: MOTOROLA Order this document by MHPM7A15S120DC3/D SEMICONDUCTOR TECHNICAL DATA Advance Information M HPM 7A15S120DC3 Hybrid Pow er Module Integrated Power Stage for 3.0 hp 460 VAC Motor Drive Motorola Preferred Device This VersaPower module integrates a 3 -p h a se inverter, 3 -p h a se |
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MHPM7A15S120DC3/D BJE 80 diode | |
8C710
Abstract: 7111-C
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1234516789ABC82DEFC81E 84AECD ABCDE9759F7 11111111111111111111111111111111111149AB1 436BD9F EC1B717B7 7107CE 14E91EC1E B17F8 E99701 8C710 7111-C | |
TTK SG 2368
Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
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AP-55A PR00UCT. MCS-48 /TP-11/1179/5K TTK SG 2368 BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf | |
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
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512kx8512k 28512A 674100H 671400H 8128B 1664H 9127H 8127H 27C256AG 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A | |
sony 7977
Abstract: diode 39b2 39b2 bd-9b sony ta - f220 A17A sony ta f220 philips sq10 B538 philips sq10 amplifier
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CXD2720Q-2 CXD2720Q-2 008dB 100PIN QFP100-P-1420-A QFP-100P-L01 sony 7977 diode 39b2 39b2 bd-9b sony ta - f220 A17A sony ta f220 philips sq10 B538 philips sq10 amplifier | |
Contextual Info: PEEL 22CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • High Speed, Low Power — 5, 7 ,1 0 , 15, 25ns tpd speed grades — Less power than quarter-power PALs and GALs ■ CMOS Electrically Erasable Technology — Superior factory testing |
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22CV8 24-pin PEEL18CV8 EL22CV8S-10* EEL22CV8P-15 PEEL22CV8J-15 PEEL22CV8S-15 PEEL22CV8P-25 PEEL22CV8J-25 EL22CV8S-25 | |
HM51W16405Contextual Info: 464DB Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-758B Z Rev. 2.0 Jun. 6, 1997 Description The 464DB is a 4M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W16405) sealed in TCP package and 1 piece |
OCR Scan |
HB56SW464DB 304-word 64-bit ADE-203-758B 16-Mbit HM51W16405) 24C02) HM51W16405 | |
3TF6
Abstract: 5611A B siemens softstarter wiring diagram 3RW40 3RP15 05-1AP30 1KB4
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H-1/187, 3TF6 5611A B siemens softstarter wiring diagram 3RW40 3RP15 05-1AP30 1KB4 | |
SSD1606Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1606 Advanced information 4GS Active Matrix EPD 128 x 180 Display Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. |
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SSD1606 SSD1606 11-May-11 17-Oct-11 2002/95/EC | |
Contextual Info: 464DBJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-688 Z Preliminary Rev. 0.0 Nov. 29, 1996 Description The 464DBJ Series is a 4M x 64 dynamic RAM Small Outline Dual In-line Memory Module (SODIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W17805) sealed in TCP package and 1 piece of |
OCR Scan |
HB56SW464DBJ 304-word 64-bit ADE-203-688 16-Mbit HM51W17805) 24C02) | |
Nippon capacitorsContextual Info: 464DBJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-688A Z Rev. 1.0 May. 30, 1997 Description The H B56 SW 46 4D BJ is a 4M x 64 dynamic R A M Sm all Outline Dual In-line Memory Module (S.O .D IM M ), mounted 16 pieces of 16-Mbit D R A M (HM51W17805) sealed in TC P package and 1 piece |
OCR Scan |
HB56SW464DBJ 304-word 64-bit ADE-203-688A 16-Mbit HM51W17805) 24C02) B56SW 144-pin Nippon capacitors | |
Contextual Info: 123456789ABCA2DE7FC44A97 !"#"$7 81#%!4 •1BC7! 4A9-.97/049.23/62C74 )+6978,4$76C*4#A9-.97/041.239A414 ·1D73.24A9-.97/04AC9443!13341=844 $# |
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123456789ABCA2DE7FC4 AC944 46A942 67/9D46 62CA74 7D699726 9467D4@ 229A4 97242C4 | |
L9D364M64SBG2Contextual Info: L9D364M64SBG2 4.0 Gb, DDR3, 64 M x 64 Integrated Module IMOD Benefits FEATURES DDR3 Integrated Module [iMOD]: x9DD 9DD4 99 x9FHQWHUWHUPLQDWHGSXVKSXOO ,2 x3DFNDJHPP[PP[PP [PDWUL[ZEDOOV x0DWUL[EDOOSLWFKPP |
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L9D364M64SBG2 DDR3-1866 DDR3-1600 DDR3-1333 DDR3-1066 DDR3-800 LDS-L9D364M64SBG2-G 933MHz L9D364M64SBG2 |