465545E Search Results
465545E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: International la g R ectifier • HEXFET Power MOSFET INTERNATIO NAL R E C T IF IE R • • • • • 465545E 0Q14RflO DE7 « I N R PD-9.607A IRFBF20 Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements |
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465545E 0Q14RflO IRFBF20 O-220 | |
Contextual Info: International iQR R ectifier HEXFET P o w e r M O S F E T • • • • • 465545E DD151E4 =136 * I N R PD-9.652A IRFI630G IN T E R N A T IO N A L R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRM S Sink to Lead Creepage Dist - 4.8mm |
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465545E DD151E4 IRFI630G O-220 | |
Contextual Info: S^E 405 5 4 5 2 GG13373 SOM » International S R ectifier I INR SERIES IRK.170, .230, .250 SCR I SCR and SCR / DIODE NEW MAGN-A-pak Power Modules INTERNATIONAL R E CT IF IE R Features • High voltage. ■ Electrically isolated base plate ■ 3 000 V RMS isolating voltage |
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GG13373 34-Thermal | |
Contextual Info: Bulletin 125183/B International S R e c tifie r ST103S SERIES Stud Version INVERTER GRADE THYRISTORS Features • A ll d iffu s e d d e s ig n ■ C e n te r a m p lify in g g a te ■ G u a ra n te e d hig h d v /d t ■ G u a ra n te e d h ig h d i/d t ■ H ig h s u rg e c u rre n t c a p a b ility |
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125183/B ST103S ST103S D-448 D-449 | |
irkv 300
Abstract: d337 diode current source inverter D345 irkt 350 IRKH 180 base triggering circuit of 3 phase inverters
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5S452 0D133Ã 10ohm: 20ahms; 34-Thermal irkv 300 d337 diode current source inverter D345 irkt 350 IRKH 180 base triggering circuit of 3 phase inverters | |
Contextual Info: Bulletin 12035/A International S R ectifier S D 6000C .R SER IES STANDARD RECOVERY DIODES Hockey Puk Version Features • W id e cu rrent rang e ■ H igh vo ltag e ratings up to 2 4 0 0 V ■ H igh su rg e cu rrent ca p ab ilitie s ■ D iffu sed junction |
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12035/A 6000C D-199 SD6000C. 10-Thermal 27Q00 D-200 | |
Contextual Info: Bulletin 125181 IB International Rectifier sn 73s s e r ie s INVERTER GRADE THYRISTORS Stud Version Features 175A • All diffused design ■ C enter am plifying gate ■ G uaranteed high dv/dt ■ G uaranteed high di/dt ■ High surge current ca p a bility |
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ST173S 13-Frequency D-458 ST173S 002723b D-459 | |
Contextual Info: PD 9.860A International U S R ectifier IRFL014 HEXFET Pow er M O S F E T • S u rfa c e M o u n t • A v a ila b le in T a p e & R e el • VDSs = 60V D y n a m ic d v/d t R ating • F a s t S w itchin g • E a s e of P arallelin g ^ D S o n = 0 - 2 0 Q |
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IRFL014 OT-223 465545E Q0Eb43b 0D2b437 | |
IR2100
Abstract: tba 2003 IR2101 dc motor 10Kf6 diode IR2101 Application note t03 package mosfet pin configuration 10KF6 10kf6 diode rectifier ir21013 1R2100
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1R2100 th220 OI35l IM02I K10BTI 040SI IR2100 tba 2003 IR2101 dc motor 10Kf6 diode IR2101 Application note t03 package mosfet pin configuration 10KF6 10kf6 diode rectifier ir21013 | |
Contextual Info: International j “R Rectifier HEXFET Power MOSFET • • • • • • • " MÔSS4S5 üül4ô3b 03T • INR ru-s.»io IRF9520S INTERNATIONAL RECTIFIER LSE D Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel |
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IRF9520S SMD-220 | |
TDA 5760
Abstract: TDA 5500
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12071/A SD263C. 55very D-676 00E7433 465545E D-677 TDA 5760 TDA 5500 | |
Contextual Info: PD - 9.1562A International IQR Rectifier IRF9410 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Vqss = 30 V ^DS on = Description |
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IRF9410 IRF7403 IRF7413 QQ2T32b | |
Contextual Info: 4655452 GQlb51Q =lb4 • INR International H ]Rectifier INTERNATIONAL RECTIFIER b5E s e r ie s m t-k THREE PHASE BRIDGE Power Modules Features ■ Package fully compatible with the industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically |
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GQlb51Q 60KAT 130MT. 160MT. | |
10JTF10
Abstract: 10CTF40 10JTF40 10CTF10 3304N 10JTF20
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DD17bfl7 10CTF 10JTF 10CTF10 10CTF20 10JTF10 10JTF20 10CTF30 10CTF40 10JTF30 10JTF40 3304N 10JTF20 | |
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Contextual Info: International fcj« Rectifier " 't ò s s " s s HEXFET Power MOSFET • • • • • • 0D1Sb2ï b7T m PDa621A IRFPG30 i m INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling |
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IRFPG30 | |
Contextual Info: International [rögRectifier Data Sheet No. PD-1.023C Series PVD10 Microelectronic Power IC Relay Single Pole, 160 mA 0-100V DC BOSFET PHOTOVOLTAIC RELAY BOSFET Power IC I 101° Operations I 25 iiSec Operation Time i 3 milliwatts Pick-Up Power I 1000 V/|isec dv/dt i |
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PVD10 PVD10 465545E 0GE4174 | |
irfip240
Abstract: DIODE PN junction diode
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Q01S3D4 IRFIP240 O-247 DIODE PN junction diode |