465S4S2 Search Results

Contextual Info: International I@ R Rectifier Provisional Data Sheet No. PD-9.1223B REPETITIVE AVALANCHE AND dv/dt RATED IRHM7450SE HEXFET TRAN SISTO R N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D Product Summary 500 Volt, 0.51», (SEE) RAD HARD HEXFET

Contextual Info: International 4655455 0015476 651 • • • • • • PD-9 588B IRFP244 Rectifier HEXFET P o w e r M O S F E T H I NR INTERNATIONAL REC TIFIER Dynam ic dv/dt Rating Repetitive Avalanche Rated Isolated Central M ounting Hole Fast Switching Ease of Paralleling

Contextual Info: International !“R Rectifier 4Û5SM5S QQlSlflM 302 • INR PD’9835 IRFI9520G HEXFET Power MOSFET • • • • • • • INTERNATIONAL RECTIFIER bSE D Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel

Contextual Info: International IOR Rectifier Data Sheet No. 1.036C PV0402P Microelectronic HEXFET POW ER M OSFET PHOTOVOLTAIC RELAY Power IC Relay Single Pole, Normally Open + Ring Detector 0-400V, 120mA AC/DC Applications General Description On/Off Hook switch • The PV0402P Photovoltaic Relay is a single-pole,

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Contextual Info: PD-9.1003 International k R ectifier IRF614S HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 250V

Contextual Info: International PD9800 Rectifier_IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT Vces = 6 0 0 V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Contextual Info: ; PD-9.1007 International Rectifier IRF710S HEXFEf Power M OSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 400 V

Contextual Info: P D - 9.1130 International ^R ectifier IRGBC20K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c r • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

Contextual Info: PD-9.1002 international io r Rectifier IRFI744G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V qss - 4 5 0 V ^DS on = 0.63£2