468MW Search Results

raytheon xr2207

Abstract: exar 2207 XR-2207 XR-2207C XR-2207M H75r xr2207
Contextual Info: - 49 2 - XR-2207 T i / '- s . veo EXAR f i « V '* E E * l í 0 5 S í a t s ( V C O ) T-, H £ ¡ * . mì&itmmit o . o i h z — i m h z t- , aííí?¡ ( T „ = 2 5 “C ) - & t -= y ? t Fs : 26V i V : 468mW( T-? y í> ) 1042mW ( -fe 7 5; -y ^ )

58AK

Abstract: XR-2207 XR-2207C XR-2207M 0H75
Contextual Info: - 49 2 - XR- 2 2 0 7 T i / '- s . veo EXAR f i « V '* E E * l í 0 5 S í a t s ( V C O ) T-, H £ ¡ * . mì&itmmit o . o i h z — i m h z t- , aííí?¡ ( T „ = 2 5 “C ) - & t -= y ? t Fs : 26V i V : 468mW( T-? y í> ) 1042mW ( -fe 7 5; -y ^ )

4A04I

Abstract: tc514100a
Contextual Info: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

Contextual Info: TOSHIBA TC5164 5 805AJ/AFT/AJS/AFTS-40,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8,388,6O8-WORD X8-BIT EDO (HYPER PAGE) DYNAMIC RAM DESCRIPTION The TC5164(5)805AJ/AFT/AJS/AFTS is an EDO (hyper page) dynamic RAM organized as 8,388,608

tc51100ap

Abstract: DIP18-P-300E TC514100
Contextual Info: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

TC514100

Abstract: 514100A
Contextual Info: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced

Contextual Info: •HYUNDAI H Y 5 1 V 1 8 1 6 4 B ,H Y 5 1 V 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process

Contextual Info: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

max630

Contextual Info: y n y j x i y H CMOS M icropow er S tep-U p S w itch in g R egulator Features General Description Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum size DC-DC converter circuits in the 5 milliwatt to 5 watt range. The MAX630 and MAX4193 provide all

RC3403ADB

Abstract: MAX 7910 RV3403ADB RM3503ADC RC3403ADC RC3403 LM324 as wein bridge oscillator RAYTHEON SEMICONDUCTOR RC-350 RAYTHEON
Contextual Info: RAYTHEON^ SEMICONDUCTOR 57 De J 75T73fc>0 □DQ4bO]i 1 | ^ 57C 04 60 1 7 5 9 7 3 6 0 “ RAYTHEON“ CO* P R O D U C T S PEC IFIC ATIO N S Raytheon LINEAR INTEGRATED CIRCUITS Ground Sensing Quad Operational Amplifier Features RC3403A, RC3503A Mask Pattern

msm51v17800b

Abstract: MSM51V17800 SOJ28 bsl 100
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: TOSHIBA LOGIC/MEMORY 4,194,304 W O R D X 42E » ^ 7 2 4 0 0 Q 2 0 ci7b T B 1 T 0 S 2 PRELIMINARY 1 "BIT D Y N A M IC R A M 7 - ji. - 2 3 - lS r DESCRIPTION The TC514100AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: FEB 16 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117100-60/-70/-80 „ CMOS 16Mx 1 BIT FAST PAGE MODE DYNAMIC RA CMOS 16,777,216 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB8117100 is a fully decoded CMOS Dynamic RAM DRAM that contains a total of

Contextual Info: 4,194,304 WORD X 1 BIT'DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100JL/ZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as

TC51440ASJ

Contextual Info: TOSHIBA TC514410ASJ-60/70/80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514410ASJ is the new generation dynamic RAM organized 1,048,576 word by 4 bit. The TC514410ASJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques

Contextual Info: FÉB i 6 1993 November 1992 Edition 1.0 FUJITSU DATA SHEET MB8117400-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400 is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216

Contextual Info: RC4195 RAYTHEON/ H E D | 75^73ba QDObBTT 3 | Voltage Regulators T -& -U -0 3 S EM I CO N D UC TO R RC4195 Fixed ±15V Dual Trackhg Voltage Regulator associated with single point regulation. The regulator is intended for ease of application. Only two external components are required for

AZL-70

Contextual Info: PRELIMINARY 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400APL/AJL/ASJL/AZL utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the

RC3302DB

Abstract: ic lm 339 RC3302 LM339AJ av 339 pin for lm 339 ic lm339n Linear Integrated Circuit LM2901 LM 339 application note LM339AM raytheon
Contextual Info: RAYTHEON-, SEMICONDU CTOR S7 57C 0 4 6 9 8 7 5 9 7 3 6 0 RAYTHEON CO» D LINEAR INTEGRATED CIRCUITS PRO D U CT SPECIFIC A TIO N S Raytheon DËj| 7ST7 3bO OOGMbTfl Single-Supply Quad Comparators Features • Input common mode voltage range includes ground ■ Wide single supply voltage range — 2V to 36V

msm514256c

Abstract: DIP20 MSM514256 ZIP20
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

Contextual Info: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal

MAX643

Abstract: MAX630/MAX4193 MAX8212 equivalent max630 inverter /S69 2LF
Contextual Info: 19-0915; Rev 1; 12/03 CMOS Micropower Step-Up Switching Regulator Maxim’s MAX630 and MAX4193 CMOS DC-DC regulators are designed for simple, efficient, minimum-size DC-DC converter circuits in the 5mW to 5W range. The MAX630 and MAX4193 provide all control and power