46A TRANSISTOR SMD Search Results

TO-247 65c7045

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R045C7 1Description TO-247

Contextual Info: FSYC260D, FSYC260R H A R R IS X S em iconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, Tqs ^o N = 0.050£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

65c7045

Abstract: IPZ65R045C7 SMD qf
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R045C7 1Description PG-TO247-4

TO-247 65c7045

Abstract: IPW65R045C7 65C7045
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPW65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPW65R045C7 1Description TO-247

65C7045

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab

65C7045

Abstract: TO-247 65c7045
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPP65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R045C7 1Description TO-220 tab

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK

65C7045

Abstract: DT80A
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPB65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPB65R045C7 1Description D²PAK

smd diode 46A

Abstract: 1E14 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 46a transistor smd
Contextual Info: FSYC260D, FSYC260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 46A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSYC260D, FSYC260R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 46A, 200V, rDS ON = 0.050Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.

1E14

Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FSYC260R1 FSYC260R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 46A, 200V, rDS ON = 0.050Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: FSYC260D, FSYC260R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title The Discrete Products Operation of Intersil has developed a FSYC series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

smd code 46n

Abstract: SPB46N03L smd diode 46A 46n03l
Contextual Info: SIEMENS SPP46N03L SPB46N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP46N03L Vfes 30 V b f lDS on @ VGS 46 A SPB46N03L 0.018 Q

smd transistor 46B

Abstract: SMD TRANSISTOR MARKING 46B smd transistor marking 47B 46B smd smd transistor 1g SMD TRANSISTOR MARKING 1B sot23 marking 47C BC849C BC846A BC847A
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number BC847B product family SOT-23 Plastic-Encapsulate Biploar Transistors

smd transistor marking 47B

Abstract: smd transistor 46B SMD TRANSISTOR MARKING 1B BC847C SMD TRANSISTOR MARKING 46B TRANSISTOR SMD catalog BC846A BC846B SMD TRANSISTOR br-37 BC847B
Contextual Info: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Transistors > Small Signal Bipolar Transistors > Part Number BC847C product family SOT-23 Plastic-Encapsulate Biploar Transistors

1E14

Abstract: 2E12 FSPYC164D1 FSPYC164R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically TM developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

1E14

Abstract: 2E12 FSPYC164D1 FSPYC164R3 relay 12V, 70A
Contextual Info: FSPYC164R, FSPYC164F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

1E14

Abstract: 2E12 FSPYC164D1 FSPYC164R3
Contextual Info: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

Contextual Info: FSPYC164R, FSPYC164F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space