46M IC Search Results

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30KMH-03 HIGH-SPEED SWITCHING USE FS30KMH-03 4 ' 2 .5 V D R IV E ' V d s s . .3 0 V ' rDS ON (MAX). .46m i2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30VSH-03 HIGH-SPEED SWITCHING USE OUTLINE DRAWING I q J w e Q w r 2.5V DRIVE rDS ON (MAX). 46m i2 IntegratedFast Recovery Diode (TYR) 45ns 6 +i CO oi q w e r V d s s . 3 0 V

Contextual Info: DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • N EW PRODU CT • • • • • • • • Low On-Resistance N-Channel: 32m @ 10V 46m @ 4.5V P-Channel: 39m @ 10V 53m @ 4.5V Low Input Capacitance Fast Switching Speed

FS30SM-03

Abstract: 324f
Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SM-03 HIGH-SPEED SWITCHING USE FS30SM-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX f 3.2 £ kr 5.45 0.6 o i 10V DRIVE V d s s . 3 0 V rDS ON (MAX). 46m i2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SMH-03 HIGH-SPEED SWITCHING USE FS30SMH-03 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. / 3.2 b/ 5.45 0.6 f= d J bd^ O l 2.5V DRIVE V d s s .30V rDS ON (MAX). 46m i2

mosfet 30V 18A TO 252

Abstract: 2SJ601 smd 18A equivalent smd mosfet IC 46M S-108
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SJ601 TO-252 +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 MAX. VGS = -4.0 V, ID =-18 A Low Ciss: Ciss = 3300 pF TYP. +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 46m

C3032LD

Contextual Info: DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V BR DSS Features RDS(on) max ID Max • Low On-Resistance TA = +25C  N-Channel: 32mΩ @ 10V 46mΩ @ 4.5V (Notes 5 & 7) NEW PRODUCT Q1 Q2  P-Channel: 39mΩ @ 10V 6.1A

DMC3032

Abstract: DMC3032LSD dmc30 C3032LD C30-32 DS32153
Contextual Info: DMC3032LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • NEW PRODUCT • • • • • • • • Low On-Resistance N-Channel: 32mΩ @ 10V 46mΩ @ 4.5V P-Channel: 39mΩ @ 10V 53mΩ @ 4.5V Low Input Capacitance Fast Switching Speed

2SJ238

Contextual Info: TOSHIBA 2SJ238 Field Effect Transistor U n it in m m Silicon P Channel MOS Type L2-jc-MOS IV 1 6 MAX. 46M AX. High Speed, High Current DC-DC Converter, 0.4±0.05 1.7 MAX, E3 - Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance

ELM14803AB

Contextual Info: 双 P 沟道 MOSFET ELM14803AB-N •概要 ■特点 ELM14803AB-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-5A Vgs=-10V ·Rds(on) < 46mΩ (Vgs=-10V) ·Rds(on) < 74mΩ (Vgs=-4.5V)

Contextual Info: 7 K B B B S Crystal Oscillator VCXO-105N N E iM fP *fl» B » /v c x o • ^ Jl/ F e a t u r e •2 . 0 c c < 7 ) ' • /■ ? ) V O xJU K • “ S m a ll J ( 2 0 . 8 x I 3 . 0 8 X 7 . 46m m ) S i z e ” a s s m a ll a s 2 . 0 c c . ( 2 0 . 8 x 1 3 . 0 8 x 7 . 4 6 m m )

NMC9346

Abstract: nmc93c46 M14A NMC9306 NMC93C26N NMC93C46N NMC93C56 NMC93C66 NMC93C06EM
Contextual Info: P RELIM INARY NMC93C06/C26/C46 256-Bit/512-Bit/1024-Bit Serial Electrically Erasable Programmable Memory G eneral Description C om patibility w ith O ther Devices The NMC93C06/NMC93C26/NMC93C46 are 256/512/ 1024 bits of CMOS electrically erasable memory divided

NMC93C46M8

Abstract: NMC93C06N nmc93c46 NMC9306 NMC9346 NMC93C56 NMC93C66 NMC93C06EN
Contextual Info: NATL S EMI COND MEMORY 3IE D b S O iiat. 001,3451 b National Semiconductor O <o CO o NMC93C06/C46 256-Bit/1024-Bit Serial Electrically Erasable Programmable Memory General Description Compatibility with Other Devices The NMC93C06/NMC93C46 are 256/1024 bits of CMOS

d879

Abstract: IC 46M NMC93C56 NMC93C06MM NMC93C46
Contextual Info: NATL SEdlCOND -CHEHORY} 3.QE D | bSDliab OOblbBE □ | " PRELIMINARY NMC93C06/C26/C46 256-Bit/512-Bit/ 1024-Bit Serial Electrically Erasable Programmable Memory General Description Compatibility with Other Devices The NMC93C06/NMC93C26/NMC93C46 are 256/512/

Contextual Info: PHOTOSWITCH Photoelectric Sensors ClearSight 7000 Miniature Rectangular Style Specifications \u n Typical Response Curve Field of View 3° Emitter LED F Object to be Sensed V isib le red 660nm QD Cordsets and Accessories D escription C atalog N um ber

2SK2437

Abstract: CPH3304 mosfet marking kf 78m marking 2SK2442 48M marking
Contextual Info: Medium Output Power M0SFETs 2 LD S r~ i e s (L owD rive)VDS S :1 2V — 200V(F.C.P:F 1 a t SAfÈYO Channe 1 P i-o c e s s) SANYO has realized low-threshold voltage by optimum design of impurity concentration of Si or Si surface by adopting the F.C. P. process

Contextual Info: Transistors IC SMD Type Product specification KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 0.127 max +0.28 1.50-0.1 +0.1

1b.1 smd transistor

Abstract: smd transistor nc 61 1B 4 SMD 1b smd transistor smd diode JC 7 SMD Transistor nc KDD3680
Contextual Info: Transistors IC SMD Type 100V N-Channel Power Trench MOSFET KDD3680 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Fast switching speed High performance trench technology for extremely low RDS ON 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15

AK93C46

Abstract: ER5911 ER59256 AK93C46M NCR59306 93c46 6 93C46 93c46f 93C46 national 93C46M
Contextual Info: A K93C46 Series 1 0 2 4 -B IT S E R IA L 5 V O N L Y C M O S E L E C T R IC A L Y E R A S A B L E PRO G RAM M A BLE MEMORY FEATURES •ADVANCED CMOS E2PROM TECHNOLOGY ■ READ/WRITE NON-VOLATILE MEMORY —Single 5V supply operation —1024 bits, 64 x 16 organization

TN6Q04

Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
Contextual Info: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use

TN6Q04

Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Contextual Info: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15

MTK MT3318

Abstract: GPS Receiver MT3318 Module sirf star III MT3318 gps Mediatek MT3318 chip AR1511 SIRF III mediatek mt3318 MC-1513 mtk gps
Contextual Info: C h ip G P S M od ulo Input Voltage SC-1513 AC-1513 ♦ EH U A R T /U S B O perating Temp °C S torag e Temp(°C) Dim ension(m m ) 3 .0 V ~ 4 .2 V 15 x 13 x 2 .2 m m 3 .0 V - 5 .0 V 15 x 13 x 2 .2 m m pin-to-pin compatible MC-1513 U A R T /U S B UC-1513 3 .0 V ~ 4 .2 V

Contextual Info: IC dependence of osc i11 at inq character ist ics uPDI7P246MIMC FCR6.0MC5 - S Room Temp. Udd [U] 3 itema~e uPDI7P246M1MC - 901 FCR6.0MC5 TcP 20 [deg] o a. U1H/U1L EU] b. U2H/U2L EU1 0 Typical *- » Uorst m c, Fosc EX] d, Trise 400 EuS] 300 200 100 60

1159m

Contextual Info: MAX3268 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic (PECL), and Low