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    47 10V Search Results

    47 10V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    47 10V Price and Stock

    VPG Transducers Y174956R4710V9L

    RES 56.471 OHM .3W .005% AXIAL
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    DigiKey Y174956R4710V9L Bulk 25
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    Avnet Americas Y174956R4710V9L Bulk 25
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    Sensata Circuit Breakers LELB1-39247-10-V

    CIR BRKR MAG-HYDR LEVER
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    DigiKey LELB1-39247-10-V Bulk 3
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    RS LELB1-39247-10-V Bulk 7 Weeks 3
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    Master Electronics LELB1-39247-10-V
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    Sager LELB1-39247-10-V 1
    • 1 $84.12
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    Sensata Circuit Breakers LELK1-1REC4-33247-10-V

    CIR BRKR MAG-HYDR LEVER
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    Axiomtek Co Ltd SBC84710VEA-1GE-B

    BOARD ONLY (MINUS CABLES AND CD) - Bulk (Alt: SBC84710VEA-1GE-B)
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    TDK Corporation VLS3015CX-470M-H

    Power Inductors - SMD 47uH 20% 1.392ohm 0.29A AEC-Q200
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    Mouser Electronics VLS3015CX-470M-H 123,016
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    Find more 47 10V price and stock on Findchips.com

    47 10V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    eee-hba471uap

    Abstract: PCE3361CT-ND EEEHBE221UAP
    Text: HA Series Rated W.V. VDC 35 50 63 100 Nom. Cap. (µF) 10 22 22 33 33 47 47 100 100 220 220 330 0.1 0.22 0.33 0.47 1.0 2.2 3.3 4.7 10 22 33 33 33 47 47 100 100 220 10 22 22 33 47 47 3.3 4.7 4.7 10 22 22 33 tan δ ≤ Spec. Values (120Hz, +20°C) 0.12 0.16


    Original     		PDF 120Hz, EEE-HB0G470R EEE-HB0G101R EEE-HB0G221P EEE-HB0J220R EEE-HB0J330R EEE-HB0J470R EEE-HB0J101P EEE-HB1A330R EEE-HB1C100R eee-hba471uap PCE3361CT-ND EEEHBE221UAP

    PCE3474CT-ND

    Abstract: PCE3410TR-ND EEV-FK1H221GP EEE-FP1V101AP PCE4445TR-ND PCE3472TR-ND pce3418ct EEVFK1E101XP PCE3469CT-ND EEVFK1H470XP
    Text: FK Series Rated Nom. W.V. Cap. VDC (µF) 10 22 33 33 47 68 100 25 100 150 220 220 330 330 470 470 4.7 10 10 22 33 47 68 35 100 100 100 150 220 220 330 330 4.7 10 10 22 33 33 50 47 47 100 100 150 220 220 4.7 10 22 22 63 33 47 68 100 3.3 4.7 10 80 10 22 33


    Original     		PDF 120Hz, E4434TR-ND PCE4435TR-ND PCE4436TR-ND PCE4437TR-ND PCE4438TR-ND PCE4439TR-ND PCE4440TR-ND PCE4441TR-ND PCE4442TR-ND PCE3474CT-ND PCE3410TR-ND EEV-FK1H221GP EEE-FP1V101AP PCE4445TR-ND PCE3472TR-ND pce3418ct EEVFK1E101XP PCE3469CT-ND EEVFK1H470XP

    5k 100 16v

    Abstract: 8X14 capacitor 1000 uf 25v k 46
    Text: - E. CAP ISO9002 CERTIFIED MANUFACTURER STANDARD SIZE, SM SERIES, 85°C Cap uF Voltage Tolerance Size 0.1 0.22 0.33 0.47 1 2.2 3.3 4.7 10 10 22 22 22 33 33 47 47 47 47 100 100 100 100 220 220 220 220 1000 1000 1000 2200 2200 2200 50V 50V 50V 50V 50V 50V 50V


    Original     		PDF ISO9002 100/K 120/K 200/K 114/K 200/K 132/K 350/K 221/K 5k 100 16v 8X14 capacitor 1000 uf 25v k 46

    5k 100 16v

    Abstract: capacitor 2200 uf 25v _ 20% 10v capacitor 2200 uf 2,2 UF 100V capacitor 2200 uF 10v Mobicon
    Text: - E. CAP ISO9002 CERTIFIED MANUFACTURER STANDARD SIZE, SM SERIES, 85°C Cap uF Voltage Tolerance Size 0.1 0.22 0.33 0.47 1 2.2 3.3 4.7 10 10 22 22 22 33 33 47 47 47 47 100 100 100 100 220 220 220 220 1000 1000 1000 2200 2200 2200 50V 50V 50V 50V 50V 50V 50V


    Original     		PDF ISO9002 5k 100 16v capacitor 2200 uf 25v _ 20% 10v capacitor 2200 uf 2,2 UF 100V capacitor 2200 uF 10v Mobicon

    capacitor 22uF 250V SMD

    Abstract: 0.22uf 250v capacitor 33uf smd CKG57D
    Text: 481_CKG 1/1 Ceramic Capacitors CKG Series Mega Cap SMD CKG57D 150µF(68µF x2) 100µF(47µF ×2) 47µF(22µF ×2) 22µF(10µF ×2) CKG57D 6max. 7max. W max. CKG45D 68µF(33µF ×2) 47µF(22µF ×2) – 10µF(4.7µF ×2) CKG45D 5.5max. Rated voltage DC.10V


    Original     		PDF CKG45D CKG57D capacitor 22uF 250V SMD 0.22uf 250v capacitor 33uf smd

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: C0402C470J8GACTU C0402C470J8GAC7867 Capacitor, ceramic, 47 pF, +/-5% Tol, 10V, C0G, 0402 General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 pF Chip Size: 0402 Voltage: 10V Temperature Coefficient: C0G Tolerance:


    Original     		PDF C0402C470J8GACTU C0402C470J8GAC7867) 7cc9dc2c-61a4-4248-ad0e-ca3475353f61

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: T520B476M010ATE035 Capacitor, tantalum, 47 uF, 3528, +/-20% Tol, 10V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 uF Voltage DC @ 85C: 10V Voltage DC @ 105C: 10V Tolerance: Application: Temperature Range:


    Original     		PDF T520B476M010ATE035 6e6e4ce4-7d03-4e74-83e0-5f2d06f9a256

    Untitled

    Abstract: No abstract text available
    Text: KEMET Part Number: T520B476M010ATE070 Capacitor, tantalum, 47 uF, 3528, +/-20% Tol, 10V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 uF Voltage DC @ 85C: 10V Voltage DC @ 105C: 10V Tolerance: Application: Temperature Range:


    Original     		PDF T520B476M010ATE070

    Untitled

    Abstract: No abstract text available
    Text: OPA547 OPA 5 47 OPA 5 47 OPA 5 47 SBOS056F – JANUARY 2002 – JULY 2005 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● WIDE SUPPLY RANGE Single Supply: +8V to +60V Dual Supply: ±4V to ±30V ● HIGH OUTPUT CURRENT: 500mA Continuous


    Original     		PDF OPA547 SBOS056F 500mA O-220, OPA547

    1000uf, 16v electrolytic capacitor

    Abstract: 1000uf, 10v electrolytic capacitor low esr TANTALUM capacitor ESR vs frequency 10UF 10V -20 fig56
    Text: 5. CONSTRUCTION AND CHARACTERISTICS OF 3. OS-CON Electrical Characteristics 3-1. Frequency Characteristic Fig.5-1 at 25°C 100 A : OS-CON 47µF/16WV (φ6.3X9.8L:306I) B : AI-E (Low Impedance) 47µF/16WV (φ6.3X7L:218I) C : Ta-cap 47µF/16WV (φ6.3X11L:311I)


    Original     		PDF F/16WV 3X11L 3X25L 5024I) F/25WV F/10WV 120Hz) 1000uf, 16v electrolytic capacitor 1000uf, 10v electrolytic capacitor low esr TANTALUM capacitor ESR vs frequency 10UF 10V -20 fig56

    BD79

    Abstract: No abstract text available
    Text: KEMET Part Number: C0805C476M7PACTU C0805C476M7PAC7800 Capacitor, ceramic, 47 uF, +/-20% Tol, 4V, X5R, 0805 General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 uF Chip Size: 0805 Voltage: Temperature Coefficient: Tolerance:


    Original     		PDF C0805C476M7PACTU C0805C476M7PAC7800) fddfbc21-e21f-4eda-bd79-7d646afc3f85 BD79

    TANTALUM capacitor ESR vs frequency

    Abstract: 2TPE470M6 2TPLF470M4E sanyo tplf 6TPC47MB 2TPSF270M9G 6TPB100MA Electrolytic Capacitor 25V 470uf poscap WAVE Soldering guidelines ELECTROLYTIC
    Text: Ｃharacteristics 1. POSCAP Electrical characteristics 1-1. Frequency characteristics Fig.A Impedance frequency characteristics POSCAP vs other type at 25℃ A：POSCAP 6.3V/47 F (3.5x2.8x1.1mm) B：Tantalum capacitor 6.3V/47μF (3.5x2.8x1.9mm)


    Original     		PDF V/47F 5V/47F 2TPE470M6 2TPSF270M9G 2TPLF470M4E RC-2002 TANTALUM capacitor ESR vs frequency 2TPE470M6 2TPLF470M4E sanyo tplf 6TPC47MB 2TPSF270M9G 6TPB100MA Electrolytic Capacitor 25V 470uf poscap WAVE Soldering guidelines ELECTROLYTIC

    converter circuit dc dc 100V

    Abstract: 47uF 25V SMD 68uf 250v capacitor capacitor variable CAP SMD 0.47uF "switching power supply" 100uf 16v capacitor variable ceramic dc to dc converter DC-to-DC
    Text: 481_CKG 1/1 Ceramic Capacitors CKG Series Mega Cap SMD CKG57D 150µF 100µF 47µF 22µF CKG57D 6max. 7max. 5.5 max. (X5R: 6.0max.) CKG45D 68µF 47µF – 10µF CKG45D 5.5max. Rated voltage DC.10V DC.16V DC.25V DC.50V CASE SIZE 4.0 max. (X5R: 4.5max.) CAPACITANCE RANGES


    Original     		PDF CKG45D CKG57D converter circuit dc dc 100V 47uF 25V SMD 68uf 250v capacitor capacitor variable CAP SMD 0.47uF "switching power supply" 100uf 16v capacitor variable ceramic dc to dc converter DC-to-DC

    oscon sa

    Abstract: 10SL10M 20CR
    Text: ５． の構造及び特性 ３．OS-CONの電気特性 ３−１ 周波数特性 図5−1 図5-1 （25℃） 100 A：OS-CON 47 F/16WV（φ6.3x9.8L：306I） B：AI-E（Low Impedance） 47μF/16WV（φ6.3×7L：218I） C：Ta-cap 47μF/16WV（φ6.3×11L：311I）


    Original     		PDF 47F/16WV6 1000F/16WV 5024I 7F/25WV B22F/6 C220F/10WV D820F/4WV OS-CON100kHzOS-CON47F oscon sa 10SL10M 20CR

    KSR2004

    Abstract: KSR1004
    Text: KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47 , R2=47 ) • Complement to KSR1004 Ï Ï TO-92 Î) ABSOLUTE MAXIMUM RATINGS (TA=25


    Original     		PDF KSR2004 KSR1004 -10mA, KSR2004 KSR1004

    KSR1204

    Abstract: KSR2204
    Text: KSR1204 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47 , R2=47 ) • Complement to KSR2204 Ï TO-92S Ï Î) ABSOLUTE MAXIMUM RATINGS (TA=25


    Original     		PDF KSR1204 KSR2204 O-92S KSR1204 KSR2204

    KSR1004

    Abstract: ksr1004 transistor KSR2004
    Text: KSR1004 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor (R1=47 , R2=47 ) • Complement to KSR2004 Ï TO-92 Ï Î) ABSOLUTE MAXIMUM RATINGS (TA=25


    Original     		PDF KSR1004 KSR2004 KSR1004 ksr1004 transistor KSR2004

    Untitled

    Abstract: No abstract text available
    Text: 100 V, 47 A, 13.2 mΩ Low RDS ON N ch Trench Power MOSFET EKI10198 Features Package  V(BR)DSS - 100 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 18.4 mΩ max. (VGS = 10 V, ID = 23.4 A)


    Original     		PDF EKI10198 O-220 EKI10198-DS

    sanyo OS-CON sepc

    Abstract: SANYO sepc series electrolytic capacitors TANTALUM capacitor ESR vs frequency sanyo svp series 10K 471 10SVP10M 16SVPA82MAA 2SEPC2700M 35SVPD8R2M 4SEPC560MX
    Text: 1. OS-CON Electrical characteristics 1-1. Frequency characteristics Fig.A Impedance frequency characteristics OS-CON vs other types 100 A : OS-CON 16V/56 F (φ8X6.9L:347 ) B : AI-E (Low impedance) 16V/47μF (φ6.3X7L:218 ) C : Ta-cap 16V/47μF (φ6.3X11L:311 )


    Original     		PDF 6V/56F 6V/47F 3X11L 16X25L RC-2003 sanyo OS-CON sepc SANYO sepc series electrolytic capacitors TANTALUM capacitor ESR vs frequency sanyo svp series 10K 471 10SVP10M 16SVPA82MAA 2SEPC2700M 35SVPD8R2M 4SEPC560MX

    Untitled

    Abstract: No abstract text available
    Text: 60 V, 47 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI06108 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 23.6 A)


    Original     		PDF DKI06108 O-252 DKI06108-DS

    CD860

    Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
    Text: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation


    Original     		PDF IFN5911, IFN5912 IFN5911 CD860 IFN860 NJ3600L IF3602 IFN5911 IFN5912

    HG62G

    Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
    Text: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2


    OCR Scan     		PDF PF0025 PF0026 NMT900, PF0027 PF0030 PF0031 NMT900 PF0032 PF0040 PF0042 HG62G HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035

    OP-47

    Abstract: raytheon OP47 op47 OP47BD OP47G OP47GM op47gt OP-47BT OP-47CT OP47AD
    Text: Operational Amplifiers OP-47 OP-47 Low Noise, High Slew Rate Operational Amplifier Description The OP-47 is designed for instrumentation grade signal conditioning where low noise both spectral density and burst , wide bandwidth, and high slew rate are required along with low


    OCR Scan     		PDF OP-47 OP-47 600i2 OP-47_ raytheon OP47 op47 OP47BD OP47G OP47GM op47gt OP-47BT OP-47CT OP47AD

    transistor BUX 83

    Abstract: bux c st bux bux 47 MARKING BUX bc 201 transistor st bux c Marking 47 transistor BUX transistor k 2718
    Text: 17E D TELEFUNKEN ELECTRONIC • â^SQQ^b OOCHSÔ1 BUX 47 • BÜX 47 A TTiiLSiPIUlMKIiM electronic CrMin*üKhnotoö*«* Silicon NPN Power Transistors ^ ^ Applications: Switching mode power supply, inverters, motor control, and relay driver Features: • In triple diffusion technique


    OCR Scan     		PDF 15A3DIN transistor BUX 83 bux c st bux bux 47 MARKING BUX bc 201 transistor st bux c Marking 47 transistor BUX transistor k 2718