4746 DIODE Search Results

L177 E

Abstract: 2SJ264 4746 diode
Contextual Info: — Ordering number: EN 4746 '•»' 2SJ264 No.4746 P-Channel MOS Silicon FET SAWOi Very High-Speed Switching Applications Features ■Low ON resistance. • Very high-speed switching. ■Low-voltage drive. • Micaless package facilitating easy mounting.

Contextual Info: SHD126012 SHD126012P SHD126012N SHD126012D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4746, REV. B SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175C Operating Temperature Applications: • Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode

Contextual Info: SHD126012 SHD126012P SHD126012N SHD126012D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4746, REV. B SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

SHD126012

Abstract: SHD126012D SHD126012N SHD126012P
Contextual Info: SHD126012 SHD126012P SHD126012N SHD126012D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4746, REV. A SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 150°C Operating Temperature Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Contextual Info: 19-4746; Rev 4; 4/11 TION KIT EVALUA BLE AVAILA High-Voltage, Linear High-Brightness LED Driver with Open-LED Fault Detect The MAX16839 programmable current regulator operates from a 5V to 40V input voltage range and features an open-drain, constant-current-sink output capable of sinking up to 100mA. The MAX16839 is well suited for automotive applications and other applications that require a

MAX16839

Abstract: 200FS
Contextual Info: 19-4746; Rev 4; 4/11 TION KIT EVALUA BLE AVAILA High-Voltage, Linear High-Brightness LED Driver with Open-LED Fault Detect Features The MAX16839 programmable current regulator operates from a 5V to 40V input voltage range and features an open-drain, constant-current-sink output capable of sinking up to 100mA. The MAX16839 is well suited for automotive applications and other applications that require a

max16839

Abstract: TRANSISTOR FS 2025 current sinking circuit providing 100ma output current
Contextual Info: 19-4746; Rev 3; 1/11 TION KIT EVALUA BLE AVAILA High-Voltage, Linear High-Brightness LED Driver with Open-LED Fault Detect The MAX16839 programmable current regulator operates from a 5V to 40V input voltage range and features an open-drain, constant-current sink output capable of sinking up to 100mA. The MAX16839 is well suited for automotive applications and other applications that require a

MAX16839

Abstract: max16839asa led tail light pwm dimming TRANSISTOR FS 2025
Contextual Info: 19-4746; Rev 1; 5/10 TION KIT EVALUA BLE AVAILA High-Voltage, Linear High-Brightness LED Driver with Open-LED Fault Detect The MAX16839 programmable current regulator operates from a 5V to 40V input voltage range and features an open-drain, constant-current sink output capable of sinking up to 100mA. The MAX16839 is well suited for automotive applications and other applications that require a

EN4746

Abstract: 2SJ264
Contextual Info: Ordering number:EN4746 P-Channel Silicon MOSFET 2SJ264 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A

2sj264

Contextual Info: Ordering number:EN4746 P-Channel Silicon MOSFET 2SJ264 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating easy mounting. unit:mm 2063A

of zener diode 4744

Abstract: zener diode 4742 zener 4733 4735 zener zener 4744 Zener Diode 4734 ALL4731 ALL4730 ALL4728 B10 zener diode
Contextual Info: AMERICAN POWER DEVICES 53E D • D73713S OGDOGB1 T ■ ZENER DIODES MELF PACKAGED T -U -/3 R, ; [j|r _ I Voltage Regulator 1W LL41 ELECTRICAL CHARACTERISTICS T y p et i N om inal Z ener V oltage Tact ICol PurrAnt vUI 1v i 11 Maximum^ D ynam ic Im pedance

zener 4745

Abstract: ne on8
Contextual Info: DATA SHEET 1SMA4741~1SMA4754 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 11 to 39 Volts POWER 1.0 Watts SMA/DO-214AC Unit: inch mm FEATURES • For surface mounted applications in order to optimize board space. .114(2.90) .098(2.50) • Low profile package

Contextual Info: DATA SHEET 1SMA4741~1SMA4754 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 11 to 39 Volts POWER 1.0 Watts SMA/DO-214AC Unit: inch mm FEATURES • For surface mounted applications in order to optimize board space. .114(2.90) .098(2.50) • Low profile package

4744

Abstract: 4743a 4736A
Contextual Info: rzrj SGS-THOMSON * 7# SURFACE MOUNT DEVICES iÄ C Ä L t ie r a « ! GENERAL PURPOSE & INDUSTRIAL ZENER DIODES Type V Z T /'Z T * rZ T /'Z T * 'Z T * 'ZK ^Z K “ VZ Ir /V r VR ^am b 25°C 1 w / T am b = P TM 4728 A TM 4729 A P TM 4730 A TM 4731 A P TM 4732 A

4742A

Abstract: 4735 zener zener 4733 4732A 4739A 4749A 4731A 1N4187
Contextual Info: o zener diodes diodes zener THOMSON-CSF Types Vzr/IZT* rZT/l2T* nom V max A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A A B B B B B B B 3,3 3,6 3,9 4,3 4,7 5,1 5,6 6,2 6,8 7,5 8,2 9,1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39

1N4739

Abstract: zener 4733 1N4189 4742A SGS-THOMSON ZENER DIODES
Contextual Info: n Z Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# M Q » [i[L [E g ? [M « S ZENER DIODES STANDARD ZENER DIODES Type 1 W VZT ' 'ZT* rZ T 'IZ T * nom max (V) (0) 'ZT* rZK 1 'ZK max (mA) (O) typ (10«/°C) 1 Tamb = 50°C Tj max = 200°C P 1N 4728 A 1N 4729 A

DO-41

Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D 02blb4fl OOOOODÖ b D S E L I T -O l-O l J SILICON DIODES S E M IC O N D U C T O R S e One-watt silicon zener diodes Vz TYPE /IN /IN ✓IN /IN /IN /IN ✓ IN ''IN ✓IN V4N ,1N /IN /IN /IN ✓ IN / IN ✓ IN ' IN /IN / IN

4746 diode

Abstract: sup85n15 SUP85N15-21 n-channel, 75v, 50a 70319
Contextual Info: SPICE Device Model SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

4746 diode

Abstract: SUP85N15-21 s7621
Contextual Info: SPICE Device Model SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

N4742A

Abstract: 1N4728 in 4742A 1N5135 1N4193B 1N47 MR1020 4745A 1N4193 1N5136
Contextual Info: SbE » eu • 7^237 D D M I SM I 1ÔM M S 6 T H SGS-THOMSON 1N 4728 A-> 1N 4764 A Rfl« gmigra(»ÛS 1N 4187 B~>1N 4193 B S G S-THOMSON ZENER DIODES ■ LARGE VOLTAGE RANGE : 3.3V TO 200V . DOUBLE SLUG TYPE CONSTRUCTION & DO 41 D E S C R IP T IO N (Glass

4728a

Abstract: 4738A N4746A N4754 1N4188 1N47
Contextual Info: SGS-THOMSON 1N 4728 A> 1N 4764 A 1N 4187 B~>1N 4193 B ZENER DIODES • LARGE VOLTAGE RANGE : 3.3V TO 200V ■ DOUBLE SLUG TYPE CONSTRUCTION 6 DO 41 D E S C R IP T IO N Glass 1W hermetically sealed glass silicon Zener diodes. A B S O L U T E R A T IN G S (limiting values)

SUP85N15-21

Contextual Info: SPICE Device Model SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

diode RA 225 R

Abstract: 45N05 rfk45n ld225 RFK45N05
Contextual Info: RFK45N05 RFK45N06 2 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Package Features T O -20 4 A E • 45A, 50V and 60V • r D S o n ) = 0 . 0 4 0 Î Î • SOA is Power-Dlssipation Limited DRAIN (FLANGE) f SOURCE

Contextual Info: SPICE Device Model SUP85N15-21 www.vishay.com Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C