48 TSOP1 1220F Search Results

K9W4G08U1M

Abstract: K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G16U1M samsung 2GB X16 Nand flash 256Mx
Contextual Info: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.

K9K8G08U0D

Abstract: K9F4G08U0D-SCB0 K9K8G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9K8G08U1D K9F4G08U0D K9XXG08XXD-XCB0 SAMSUNG 4gb NAND Flash Qualification Report K9WAG08U1D-SCB
Contextual Info: Rev.1.0, Jun. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K9K8G08U0D

Abstract: K9K8G08U1D K9K8G08U0D-SCB0 K9F4G08U0D-SCB0 K9WAG08U1D K9WAG08U1D-SCB0 K9F4G08u0d K9F4G08U0D-S K9WAG08U1D-SCB K9f* 2010
Contextual Info: Rev.0.2, May. 2010 K9F4G08U0D K9K8G08U0D K9K8G08U1D K9WAG08U1D Advance 4Gb D-die NAND Flash Single-Level-Cell 1bit/cell datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K9K2G08Q0M

Abstract: K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G08U1M K9W4G16U1M samsung 2GB X16 Nand flash K9K2G16X0M
Contextual Info: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.

K9K2G08Q0M

Abstract: K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-FCB0 K9K2G16Q0M K9K2G16U0M K9W4G08U1M K9W4G16U1M samsung 2GB X16 Nand flash
Contextual Info: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.

SAMSUNG moviNAND

Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002

samsung K9 flash

Abstract: K9 samsung samsung K9 256Mx tsop 4036 K9K2G08Q0M K9K2G08Q0M-PCB0 K9K2G08U0M K9K2G08U0M-F K9K2G16Q0M
Contextual Info: K9W4G08U1M K9K2G08Q0M K9K2G08U0M K9W4G16U1M K9K2G16Q0M K9K2G16U0M FLASH MEMORY Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001 Advance 0.1 1. IOL R/B of 1.8V device is changed.

K9XXG08XXM

Abstract: k9w8g16u1m K9K4G08Q0M-Y SAMSUNG 4gb NAND Flash Qualification Report Samsung K9W8G08U1M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16Q0M
Contextual Info: K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package

SAMSUNG 4gb NAND Flash Qualification Report

Abstract: K9K4G08U0M K9K4G08Q0M K9K4G08Q0M-PCB0 K9K4G08U0M-PCB0 K9K4G16Q0M K9K4G16U0M K9W8G08U1M nand hamming code 2k bytes k9xxg16xxm
Contextual Info: K9W8G08U1M K9K4G08Q0M K9K4G08U0M Advance FLASH MEMORY K9K4G16Q0M K9K4G16U0M Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package

K9WBG08U1M

Abstract: K9KAG08U0M K9WBG08U1M-PCB0 K9NCG08U5M-PCB0 K9NCG08U5M Samsung K9NCG08U5M K9F8G08U0M K9KAG08U0M-PCB0 k9wbg08 K9KAG08U0M-P
Contextual Info: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Samsung Flash K9WAG08U1A

Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
Contextual Info: K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

63 ball fbga

Contextual Info: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.

K9F5608U0C-PCB0

Contextual Info: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.

K9F5608U0C-PCB0

Abstract: K9F5608D0C lockpre K9F5608U0C K9F5608Q0C K9F5608Q0C-HCB0 K9F5608U0C-FCB0 K9F5616D0C K9F5616Q0C K9F5616U0C
Contextual Info: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.

Contextual Info: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.

Contextual Info: K9F2808U0C K9F2816U0C FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm

Contextual Info: K9F5608Q0B K9F5608U0B K9F5616Q0B K9F5616U0B FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May. 15th 2001 0.1 At Read2 operation in X16 device : A3 ~ A7 are Don’t care => A3 ~ A7 are "L"

K9F1G08D0M

Abstract: K9F1G08 K9F1G08Q0M K9F1G08Q0M-PCB0 K9F1G08U0M K9F1G08U0M-FCB0 K9F1G08U0M-PCB0 K9F1G16D0M K9F1G16Q0M K9F1G16U0M
Contextual Info: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.

K9F1G08U0

Abstract: K9F1G08U0M-FCB0 K9F1G08Q0M-Y K9F1G08 K9F1G08X0M K9F1G08U0M-Y 27X16 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G08U
Contextual Info: K9F1G08Q0M K9F1G16Q0M K9F1G08D0M K9F1G16D0M K9F1G08U0M K9F1G16U0M FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue July. 5. 2001 Advance 0.1 1. Iol R/B of 1.8V is changed.

K9F2808Q0C-HCB0

Abstract: K9F2808U0C K9F2808U0C-FCB0 K9F2808U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2808U0C-YCB0
Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002

Contextual Info: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 1Gb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table

K9F5608U0C

Abstract: K9F5608D0C K9F5608Q0C K9F5608Q0C-HCB0 K9F5608U0C-FCB0 K9F5616D0C K9F5616Q0C K9F5616U0C K9F5616U0C-HCB0 K9F5616U0C-PCB0
Contextual Info: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.

Contextual Info: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.

Contextual Info: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table