4800 N-CHANNEL MOSFET Search Results

Contextual Info: MOSFET MODULE SF150AA50 UL;E76102 M SF1 5 0 A A 5 0 is an isolated MOSFET module designed for fast switching applications of low voltage/high current. S F 1 5 0 A A 5 0 enable you to control high power with compact p a c k a g e .^ ^ 150A, VDSS= 500V Compact Package

Contextual Info: Preliminary Data PROFET BTS 840S2 Smart High-Side Power Switch Two Channels: 2 x 3 0 mo Current Sense Product Summary Operating Voltage Package Vbb on Active channels: one On-state Resistance Ron Load Current (ISO) Current Limitation 5.0. ,34V two parallel

Contextual Info: PROFET BTS 740S2 Smart High-Side Power Switch Two Channels: 2 x 30mo Current Sense Product Summary Operating Voltage Vbb on Active channels one 30mi2 On-state Resistance R on 5.5A Nominal load current Il(NOM) Current limitation 24A IL(SCr) Package 5.0. ,34V

NTTFS4800N

Abstract: NTTFS4800NTAG NTTFS4800NTWG
Contextual Info: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

NTTFS4800N

Abstract: NTTFS4800NTAG NTTFS4800NTWG
Contextual Info: NTTFS4800N Power MOSFET 30 V, 32 A, Single N−Channel, m8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Contextual Info: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

SJ 76 A DIODE EMI

Contextual Info: DIGITAL AUDIO MOSFET IRF6643TRPbF Key Parameters Features • Latest MOSFET silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

Contextual Info: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S G S N - CHANNEL ENHANCEMENT MODE 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

Contextual Info: DIGITAL AUDIO MOSFET IRF6641TRPbF Key Parameters Features • Latest MOSFET silicon technology  Key parameters optimized for Class-D audio amplifier applications  Low RDS on for improved efficiency  Low Qg for better THD and improved efficiency

2sj403

Abstract: 2sk2532 2SJ406 2SJ28 mosfet 4800 2sk2680 2SK2161 2SK1427 2SK1428 2SK1430
Contextual Info: Large-signal Power M0SFETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

AMPLIFIER 1500w

Contextual Info: S D ARF1500 S D ARF1500 BeO RF POWER MOSFET 135-05 G S S N - CHANNEL ENHANCEMENT MODE G S 125V 900W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.

840S2

Abstract: P-DSO-20-12
Contextual Info: Preliminary Data PROFET BTS 840S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ

CMOS Process Family

Abstract: 0.6 um cmos process
Contextual Info: 3 Micron CMOS Process Family Features Process parameters 3µm • LOVMOS Process [3Volts 2.7~3.6 Low Voltage Option] Units • Double Poly / Double Metal 10 & 5 & 3volts • 6 µm Poly Pitch; 7 µm Metal Pitch Metal I pitch (line/space) 3/4 µm • 7 Volts Maximum Operating Voltage

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

siemens functional description profet

Abstract: P-DSO-20-12
Contextual Info: PROFET BTS 840 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ 12A 24A 5.0.34V

0.6 um cmos process

Abstract: CMOS Process Family micron resistor TCR 1.2 Micron CMOS Process Family
Contextual Info: 3 Micron CMOS Process Family  February 1996 Features • • • • • • Process Parameters LOVMOS Process 2.7~3.6 Volts Low Voltage Option Double Poly / Double Metal 6 µm Poly Pitch; 7 µm Metal Pitch 7 Volts Maximum Operating Voltage 10 Volts High Voltage Option

4800 BB

Abstract: P-DSO-20-12 BTS840S2 Q67060S701 hl24l
Contextual Info: PROFET BTS 840 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ 12A 24A 5.0.34V

BTS840S2

Abstract: P-DSO-20-12
Contextual Info: PROFET BTS 840 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Ω Current Sense Product Summary Vbb on Active channels: On-state Resistance RON Load Current (ISO) IL(ISO) Current Limitation IL(SCr) Package Operating Voltage one 30mΩ 12A 24A

BTS 740 s2

Abstract: BTS 740 S5 BTS 740 profet Q67060-S7012 Q67060-S7012-A2
Contextual Info: PROFET BTS 740 S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Package Operating Voltage one 30mΩ 5.5A 24A 5.0.34V

740S2

Abstract: BTS 740 L2
Contextual Info: PROFET BTS 740S2 Smart High-Side Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Vbb on Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Package Operating Voltage one 30mΩ 5.5A 24A 5.0.34V

IRF7665S2

Abstract: IRF7665S2TR1PBF AN1035 IRF7665S2TR
Contextual Info: DIGITAL AUDIO MOSFET PD - 96239 IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

Contextual Info: PD - 96239 DIGITAL AUDIO MOSFET IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 Features • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI

ARF1500

Abstract: AMPLIFIER 1500w MAX3920 "27 mhz" amp 700B
Contextual Info: S D S S D S ARF1500 D ARF1500 BeO RF POWER MOSFET 1525-xx G S N - CHANNEL ENHANCEMENT MODE S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.