480MJ Search Results

Contextual Info: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description

ZXMS66004SGTA

Abstract: zxms6004 design ideas TS16949 ZXMS6004SG zxms66004
Contextual Info: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description

Contextual Info: im iFFI im SEME IRF054SM LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 0.25 3.5 3.0 V Dss 60V I. *D(cont) 45A W -» i ^DS(on) 0.027Q A CD FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE TT • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: ZXMS6004SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Features and Benefits ADVANCE INFORMATION Product Summary •  Continuos drain source voltage On-state resistance 60V 500mΩ   Nominal load current VIN = 5V Clamping Energy

50n6s2d

Abstract: FGH50N6S2D 50n6s2 LD26 150a 400v diode bridge fgh50n6s
Contextual Info: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau

50N6S2

Abstract: 50N6 FGH50N6S2 FGH50N6S2D LD26 TA49392
Contextual Info: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices

t1ls

Contextual Info: mi É tti INI IRFM054 SEME LAB MECHANICAL DATA N-CHANNEL POWER MOSFET D im e nsio ns in mm inches 1 3 .5 9 ( 0 .5 3 5 ) 6 .3 2 ( 0 . 2 4 9 ) 1 3 .8 4 ( 0 .5 4 5 ) 6 .6 0 ( 0 . 2 6 0 ) 3 .5 3 ( 0 . 1 3 9 ) 3 .7 8 ( 0 . 1 4 9 ) " - *] 1 . 0 2 ( 0 .0 4 0 )

Contextual Info: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau

50N6S2D

Abstract: 50N6 FGH50N6S2D TA49344 TA49392 LD26
Contextual Info: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau

IRFM054

Contextual Info: IRFM054 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535)

Contextual Info: ZXMS6004SG Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • • On-State Resistance Nominal Load Current VIN = 5V

IRF054SMD

Contextual Info: SEME IRF054SMD LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

IRFN054SMD

Contextual Info: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

ZXMS6006SG

Contextual Info: A Product Line of Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • • Nominal load current VIN = 5V

Contextual Info: Mil W llll : SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET VDSS 11.5 2.0 3.5 60V 45A 0.027Q 0.25 3.5 I D(cont) 3.0 ^D S (on) iC FEATURES -1- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF

50N6S2

Abstract: FGH50N6S2 FGH50N6S2D LD26
Contextual Info: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices

Contextual Info: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices

Contextual Info: mi iFFi Nil SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 0.25 3.0 V DSS 60V I D(cont) 45A 0.027a ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o> L I 1'_ • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

NTE2923

Contextual Info: NTE2923 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID

Contextual Info: A Product Line of Diodes Incorporated ZXMS6006SG ADV AN CE I N FORM AT I ON 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits • • Continuos drain source voltage On-state resistance 60V 100mΩ • •

4600 mosfet

Abstract: MOSFET 20V 45A
Contextual Info: SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 45A Ω 0.027Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

50n6s2

Abstract: TA49392 FGH50N6S2 FGH50N6S2D LD26 igbt full h bridge 25A 0640
Contextual Info: FGH50N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices

Contextual Info: S EM E IRF054SMD LA B MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )

Contextual Info: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6