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    4814 MOSFET Search Results

    4814 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4814 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PHILIPS MOSFET MARKING

    Abstract: passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107
    Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BF1107 Silicon N-channel single gate MOSFET Preliminary specification File under Discrete Semiconductors, SC07 1998 Apr 07 Philips Semiconductors Preliminary specification Silicon N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 SCA59 115102/00/01/pp8 PHILIPS MOSFET MARKING passive loopthrough n channel depletion MOSFET mosfet 5130 Q 817 mosfet K 2865 115102 4466 8 pin mosfet pin voltage marking code 10 sot23 BF1107

    mosfet K 2865

    Abstract: BF1107 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF1107 N-channel single gate MOSFET Product specification Supersedes data of 1998 Apr 07 File under Discrete Semiconductors, SC07 1998 Jun 22 Philips Semiconductors Product specification N-channel single gate MOSFET


    Original     		PDF M3D088 BF1107 BF1107 SCA60 115102/00/02/pp8 mosfet K 2865 PHILIPS RF MOSFET depletion MARKING PHILIPS MOSFET MARKING

    FDQ7698S

    Abstract: FDS6676 22 diode
    Text: FDQ7698S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package General Description Features The FDQ7698S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies The high-side switch Q1 is designed with specific emphasis on


    Original     		PDF FDQ7698S SO-14 FDQ7698S SO-14 FDS6676 22 diode

    Untitled

    Abstract: No abstract text available
    Text: FDQ7698S Dual Notebook Power Supply N-Channel PowerTrench in SO-14 Package General Description Features The FDQ7698S is designed to replace two single SO-8 MOSFETs in DC to DC power supplies The high-side switch Q1 is designed with specific emphasis on


    Original     		PDF FDQ7698S SO-14 FDQ7698S SO-14

    BF989

    Abstract: MOSFET 4466 BP317 SCA52 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF989 OT143 SCA52 117061/00/02/pp8 BF989 MOSFET 4466 BP317 SCA52 dual-gate

    BF990A

    Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF990A OT143 SCA52 117061/00/02/pp8 BF990A PHILIPS MOSFET MARKING 4814 mosfet dual-gate

    Dual-Gate Mosfet

    Abstract: PHILIPS MOSFET MARKING 2.F 1 marking dual-gate fet dual gate sot143 FET marking code fet MARKING g2 n channel depletion MOSFET 4466 8 pin mosfet pin voltage philips mosfet
    Text: Datum 971203 PRODUKTINFORMATION FRÅN HÄMTFAX +46 8 735 35 33 FAX ON DEMAND +46 8 735 35 29 INTERNET http://www.elfa.se TEKNISK INFORMATION +46 8 735 35 15 ORDERTEL +46 8 735 35 35 ORDERFAX +46 8 730 30 88 Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande


    Original     		PDF BF990A OT143 BF990A SCA52 117061/00/02/pp8 Dual-Gate Mosfet PHILIPS MOSFET MARKING 2.F 1 marking dual-gate fet dual gate sot143 FET marking code fet MARKING g2 n channel depletion MOSFET 4466 8 pin mosfet pin voltage philips mosfet

    AM/FM tuning capacitor

    Abstract: fm radio printed circuit board RADIO RECEIVER IC FM stereo FM stereo MPX Decoder varicon toko HU-22124 FM radio CIRcuit DIAGRAM philips ic fm am receiver murata ceramic fm filter 10.7 toko ift coil sfe 10,7 murata
    Text: Philips Semiconductors Product specification AM/FM stereo radio circuit TEA5711; TEA5711T • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • High impedance MOSFET input on AM. • Low current consumption: 15 mA at AM, 16 mA at FM


    Original     		PDF TEA5711; TEA5711T TEA5711lips SCD35 AM/FM tuning capacitor fm radio printed circuit board RADIO RECEIVER IC FM stereo FM stereo MPX Decoder varicon toko HU-22124 FM radio CIRcuit DIAGRAM philips ic fm am receiver murata ceramic fm filter 10.7 toko ift coil sfe 10,7 murata

    philips resistor 2322-195

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY916 UHF amplifier module Product specification Supersedes data of 1997 Jul 11 1998 May 27 Philips Semiconductors Product specification UHF amplifier module BGY916 FEATURES PINNING - SOT365A • 26 V nominal supply voltage


    Original     		PDF M3D167 BGY916 OT365A BGY916 OT365A SCA60 125108/00/04/pp12 philips resistor 2322-195

    BP317

    Abstract: BYC8-600
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC8-600 Rectifier diode Freewheeling and power factor correction Product specification File under Discrete Semiconductors, SC02 October 1997 Philips Semiconductors Product specification Rectifier diode Freewheeling and power factor correction


    Original     		PDF BYC8-600 SCA56 137027/600/01/pp7 BP317 BYC8-600

    BP317

    Abstract: BYC8-600 BYC8B-600
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC8B-600 Rectifier diode Freewheeling and power factor correction Product specification File under Discrete Semiconductors, SC02 October 1997 Philips Semiconductors Product specification Rectifier diode Freewheeling and power factor correction


    Original     		PDF BYC8B-600 SCA56 137027/600/01/pp7 BP317 BYC8-600 BYC8B-600

    bridge rectifier 8341

    Abstract: BP317 BYC5-600 BYC5B-600
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC5B-600 Rectifier diode Freewheeling and power factor correction Product specification File under Discrete Semiconductors, SC02 October 1997 Philips Semiconductors Product specification Rectifier diode Freewheeling and power factor correction


    Original     		PDF BYC5B-600 SCA56 137027/600/01/pp7 bridge rectifier 8341 BP317 BYC5-600 BYC5B-600

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY916/5 UHF amplifier module Product specification Supersedes data of 1997 Jul 11 1998 May 27 Philips Semiconductors Product specification UHF amplifier module BGY916/5 FEATURES PINNING SOT365A


    Original     		PDF M3D167 BGY916/5 OT365A BGY916/5 OT365A SCA60 125108/00/02/pp12

    bridge rectifier 8341

    Abstract: BP317 BYC10-600 BYC10B-600
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC10B-600 Rectifier diode Freewheeling and power factor correction Product specification File under Discrete Semiconductors, SC02 October 1997 Philips Semiconductors Product specification Rectifier diode Freewheeling and power factor correction


    Original     		PDF BYC10B-600 SCA56 137027/600/01/pp7 bridge rectifier 8341 BP317 BYC10-600 BYC10B-600

    BP317

    Abstract: BYC10-600
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BYC10-600 Rectifier diode Freewheeling and power factor correction Product specification File under Discrete Semiconductors, SC02 October 1997 Philips Semiconductors Product specification Rectifier diode Freewheeling and power factor correction


    Original     		PDF BYC10-600 SCA56 137027/600/01/pp7 BP317 BYC10-600

    BB405

    Abstract: BF998WR 4814 mosfet dual-gate MGC480
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR


    Original     		PDF BF998WR SCA55 117067/00/02/pp12 BB405 BF998WR 4814 mosfet dual-gate MGC480

    TRANSISTOR ww1

    Abstract: mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 BLF548 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350
    Text: APPLICATION NOTE 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET AN98021 Philips Semiconductors 100 − 450 MHz 250 W Power Amplifier with the BLF548 MOSFET CONTENTS 1 INTRODUCTION 2 DESIGN CONSIDERATIONS 3 AMPLIFIER CONCEPT 4 INPUT CIRCUITRY


    Original     		PDF BLF548 AN98021 BLF548 SCA57 TRANSISTOR ww1 mosfet handbook trimmer 2-18 pf ww1 45 transistor trafo toroidal AN98021 KDI-PPT820-75-3 4814 mosfet chip philips catalog potentiometer 2322 350

    BUK107-50GL

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50GL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50GL SC13a SCA54 137087/1200/01/pp11 BUK107-50GL

    BC337

    Abstract: BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50DS SC13a SCA54 137087/1200/02/pp12 BC337 BC337-10 mosfet 5130 BUK107-50DS bc337 texas 4466 8 pin mosfet pin voltage

    4466 8 pin mosfet pin voltage

    Abstract: 501 mosfet transistor BUK107-50DL
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUK107-50DL PowerMOS transistor Logic level TOPFET Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a March 1997 Philips Semiconductors Product specification PowerMOS transistor


    Original     		PDF BUK107-50DL SC13a SCA54 137087/1200/02/pp12 4466 8 pin mosfet pin voltage 501 mosfet transistor BUK107-50DL

    mosfet K 2865

    Abstract: 4814 mosfet BF909WR dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR


    Original     		PDF BF909WR SCA55 117067/00/02/pp12 mosfet K 2865 4814 mosfet BF909WR dual-gate

    transistor marking NEP ghz

    Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs


    Original     		PDF BF1105; BF1105R; BF1105WR SCA56 117067/00/03/pp16 transistor marking NEP ghz dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate

    transistor BC 575

    Abstract: 4814 mosfet mosfet 4813 CD 4814 4814 4814 transistor 221A-06 AN569 MTP12P10 diode P06A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP12P10 Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for medium voltage, high speed power switching applications such as switching regulators,


    OCR Scan     		PDF MTP12P10 21A-06, O-220AB transistor BC 575 4814 mosfet mosfet 4813 CD 4814 4814 4814 transistor 221A-06 AN569 diode P06A

    EL 817 c337

    Abstract: transistor c337 c337 transistor C337 W 61 DS4005
    Text: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BUK107-50DS SC13a BUK107-50 SCA54 137087/1200/02/pp12 EL 817 c337 transistor c337 c337 transistor C337 W 61 DS4005