48F010 Search Results

Contextual Info: seeQ 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Description Features • ■ 128K Byte Flash Erasable Non-Volatile Memory Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ ■ ■ Input Latches tor Writing and Erasing

Contextual Info: Philips Components-Signetics 48F010 Document No. ECN No. Date of Issue A u g u s t 1990 Status P re lim ina ry Specification 1024K-bit FLASH memory 128K x 8 M em ory Products PIN CONFIGURATIONS DESCRIPTION FEATURES The 4 8 F 0 1 0 is a 10 24K bit C M OS

Contextual Info: eeeo 48F010 1024K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Features Description • ■ ■ ■ ■ ■ ■ ■ The 48F010 is a 1024K bit CMOS FLASH EEPROM organizedas 128Kx8bits. SEEQ‘48F010 brings together the high density and cost effectiveness of UVEPROMs,

AH11-00093A

Abstract: 48F010-20F 48F010-25F 48F010-30F 48F010K-25F
Contextual Info: Philips Components-Signetics 48F010 Document No. ECN No. Date of Issue A u g ust 1990 Status P re lim ina ry S pecification 1024K-bit FLASH memory 128K x 8 M em ory P roducts DESCRIPTION FEATURES The 4 8 F 0 1 0 is a 10 24 K bit C M O S FLASH M em ory o rg a n ize d as 128K x 8

Contextual Info: SEE<3 TECHNOLOGY INC HE D ainsaa q o q s 7ö 7 ? E/48F010 PRELIMINARY DATA SHEET T -4 6 -1 3 -2 7 Ordering Information D M 48F010 ~ r Pickag» Typ* ~ T Temperatur« Rang« 1 D*vlc* D » Ceramic Dip E - - 4 0 to +85°C 128KX8FLASH EEPROM L « Ceramic Leadess Chip

D28F512

Abstract: flash eeprom D28F010
Contextual Info: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 MC48F512 48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent

Contextual Info: 48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features m 128K Byte FLASH Erasable Non-Volatile Memory m FLASH EEPROM Cell Technology • ■ ■ ■ ■ ■ ■ Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing

A1HB

Abstract: 2764-16
Contextual Info: SEEcJ TECHNOLOGY INC 11E D a n ^ a 0DDS7?b 2 E/48F010 1024K CMOS FLASH EEPROM 'T - M PRELIMINARY DATA SHEET Block Diagram Features • t - il- z i October 1989 12SK Byte FLASH Erasable Non-Volatile Memory U FLASH EEPROM Cell Technology » Electrical Chip and 1024 Byte Sector Erase

75a5

Abstract: 48F010-200 47F010-200 47F010-250 47F010-300 48F010-250 48F010-300 AT29C010-12 AT29C010-20 AT29C010-25
Contextual Info: - 158 — 28 F O 1O ¥ 7. 'f 7 f* > VDD as -h /m %. % «i ns 0-71) 200 200 75 50 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 47F010-250 SEEQ 0-70 250 250 100 60 4. 5-5. 5 40/5 0.8 2.0 6 0. 45/2.1 2. 4/0. 4 12 (*C> TOD •ax (ns) 1 A SEEQ 45 TOH US 47F01Q-200

3XXXM

Contextual Info: 000Q E/48F010 1024K CMOS FLASH EEPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • ■ ■ ■ 128K Byte FLASH Erasable Non-Volatile Memory FLASH EEPROM Cell Technology Electrical Chip and 1024 Byte Sector Erase Input Latches for Writing and Erasing