48F512IS Search Results

Contextual Info: seeQ 48F512 5 1 2 K F L A S H E E P R O M PRELIMINARY DATA SHEET M y 1989 Description Features • 64K Byte Flash Erasable Non-Volatile M em ory ■ Lo w Power CMOS P rocess ■ E le ctrica l B yte W rite a n d C hip/Sector Erase The 48F512is a 512Kbit CMOS FLASH EEPROM organ¡zed as 6 4 K x8 b its. SEEQ's48F512 brings together the

48F512

Contextual Info: seeQ 48F512 512K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Features Description • 64K Byte Flash Erasable Non-Volatile Memory ■ Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ Input Latches for Writing and Erasing The 48F512is a 512Kbit CMOS FLASH EEPROM organ­

Contextual Info: S E E <3 TECHNOLOGY INC l^E D • f l i n a i 3 G G 05425 Ü 48F512 512K FLASH EEPROM July 1989 PRELIMINARY DATASHEET Description Features ■ ■ ■ ■ ■ ■ m ■ U ■ n 64K Byte Flash Erasable Non-Volatile Memory Low Power CMOS Process Electrical Byte Write and Chip/Sector Erase