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Vishay Intertechnologies


Vishay Intertechnologies RN55D1821FB14 Metal Film Resistors - Through Hole 1/8watt 1.82Kohms 1% 100ppm
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RN55D1821FB14	Box	2,700		100	1 - 10 - 100 $0.10 1000 $0.10 10000 $0.10	Buy Now
Vishay Intertechnologies 376D106X5050R2BRZ Tantalum Capacitors - Solid Leaded 10UF 50V 5% C R-FR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	376D106X5050R2BRZ	Tray			20	1 - 10 - 100 $15.50 1000 $15.50 10000 $15.50	Buy Now

490MIL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TSOP40 Flash Abstract: tsop32 DIL40 Contextual Info: Conv DIL40/TSOP40 - универсальный адаптер c ZIF колодкой для микросхем в корпусе TSOP в основном FLASH EPROM с количеством выводов до 40, параметры адаптера: ширина корпуса м/с — 490mil	Original	DIL40/TSOP40 490mil com/pics/convert/con0072b com/pics/sop-tsop/tsop32-488m com/pics/sop-tsop/tsop40-488m TSOP40 Flash tsop32 DIL40	PDF
QFJ022-P-R285-2 Contextual Info: PLASTIC LEADED CHIP CARRIER 22 PIN PLASTIC LCC-22P-M02 EIAJ code : ∗QFJ022-P-R285-2 Lead pitch 50mil Package width x package length 285 × 490mil Lead shape J bend Sealing method Plastic mold 22-pin plastic QFJ PLCC (LCC-22P-M02) 22-pin plastic QFJ (PLCC)	Original	LCC-22P-M02 QFJ022-P-R285-2 50mil 490mil 22-pin LCC-22P-M02) QFJ022-P-R285-2	PDF
QFJ018-P-R285-4 Contextual Info: PLASTIC LEADED CHIP CARRIER 18 PIN PLASTIC LCC-18P-M04 EIAJ code : ∗QFJ018-P-R285-4 Lead pitch 50mil Package width x package length 285 × 490mil Lead shape J bend Sealing method Plastic mold 18-pin plastic QFJ PLCC (LCC-18P-M04) 18-pin plastic QFJ (PLCC)	Original	LCC-18P-M04 QFJ018-P-R285-4 50mil 490mil 18-pin LCC-18P-M04) QFJ018-P-R285-4	PDF
Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power	Original	NPT35015 EAR99 NDS-005	PDF
NPT35015 Abstract: NPT35015D r04350 12061C103KAT2A EAR99 JESD22-A114 JESD22-A115 j146 NPT35015DT Contextual Info: NPT35015 Datasheet Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3000 - 6000MHz • 18W P3dB CW Power	Original	NPT35015 6000MHz EAR99 NDS-005 NPT35015D r04350 12061C103KAT2A JESD22-A114 JESD22-A115 j146 NPT35015DT	PDF
UPD4361 Abstract: PD4361K-40 Contextual Info: NEC /¿PD4361 6 5 ,5 3 6 x 1-B IT STATIC CMOS RAM NEC Electronics Inc. Description Pin Configurations The ;uPD4361 is a 65,536-word by 1-bit static random access memory fabricated with advanced silicon-gate technology. Its unique circuitry, using C M O S peri	OCR Scan	uPD4361 536-word the//PD4361 300-mil-wide, 22-pin 290-mil 490-mil, PD4361 PD4361K-40	PDF
Contextual Info: NPT35015 Gallium Nitride 28V, 18W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, Pulsed, WiMAX, and other applications from 3300 - 3800 MHz • 18W P3dB CW Power • 25W P3dB peak envelope power	Original	NPT35015 EAR99 NDS-005	PDF