4MX64BITS Search Results

HYM76V4M655HGLT6-8

Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
Contextual Info: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4655HGT6 Series DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

Contextual Info: HYM76V4655HGT6 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM76V4655HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4x16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

BSS960A

Abstract: VDEBC2304
Contextual Info: V-Data VDEBC2304 PC-133 SDRAM Unbuffered SO-DIMM 4Mx64bits SDRAM DIMM based on 4Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDEBC2304 is 4Mx64 bits Synchronous DRAM Modules, The modules are composed of four 4Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil

Contextual Info: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin

Contextual Info: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits

Contextual Info: KMM366F400CK KMM366F410CK DRAM MODULE KMM366F400CK & KMM366F410CK EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40 1 0CK is a 4Mx64bits Dynamic RAM high density memory module. The Samsung

HYM7V65401BTRG

Contextual Info: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B R-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B R-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. Two 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.

capacitor taa

Contextual Info: DRAM MODULE M466F0404BT2-L 8Byte 4Mx64 SODIMM 4Mx16 base Revision 0.2 June 1998 DRAM MODULE M466F0404BT2-L M466F0404BT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404BT2-L is a 4Mx64bits Dynamic

HMD4M64D16EV

Abstract: HMD4M64D16V
Contextual Info: HANBiT HMD4M64D16V 32Mbyte 4Mx64 Fast Page Mode 4K Ref. 3.3V, DIMM 168 pin Part No. HMD4M64D16V GENERAL DESCRIPTION The HMD4M64D16V is a 4Mx64bits Dynamic RAM high density memory module. The HMD4M64D16V consists of sixteen CMOS 4Mx4bits DRAMs in SOJ/TSOP 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or

HYM7V65401B

Contextual Info: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package

HYM7V63401BTRG-75

Contextual Info: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V63401B R-Series DESCRIPTION The Hynix HYM7V63401B R-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package

Contextual Info: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4635HGT6 Series DESCRIPTION The Hynix HYM76V4635AT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

Contextual Info: HYM76V4M655HG L T6 4Mx64, 4M x 16 based, PC100 DESCRIPTION The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin

Contextual Info: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package

HMD4M64D16E

Contextual Info: HANBiT HMD4M64D16E 32Mbyte 4Mx64 EDO Mode 4K Ref. 5V, DIMM 168 pin Part No. HMD4M64D16E GENERAL DESCRIPTION The HMD4M64D16E is a 4Mx64bits Dynamic RAM high density memory module. The HMD4M64D16E consists of sixteen CMOS 4Mx4bits DRAMs in SOJ/TSOPІІ 400mil packages mounted on a 168-pin glass-epoxy substrate. A 0.1 or

Contextual Info: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series DESCRIPTION The Hynix HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

Contextual Info: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V63401B R-Series DESCRIPTION The Hyundai’ s HYM7V63401B R-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP

HYM7V65401

Contextual Info: HYM7V65401B L TQG 4Mx64, 4Mx16 based, PC100 DESCRIPTION The Hynix HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bit CMOS Synchronous DRAMs In 400mll 54pln TSOP-II package and 2Kbit EEPROM in 8pln TSSOP package

MXAQ

Contextual Info: HYM76V4M635HG L T6 4Mx64, 4Mx16 based, PC133 DESCRIPTION The Hyntx HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed o f four4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

Contextual Info: KM M 3 66 F 4 0 0C K KM M 366F41 OCK DR A M M O D U L E KM M 3 6 6 F 4 0 0 C K & K M M 3 6 6 F 4 1 0 C K E D O M o d e wi t h ou t buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V F E A TU R ES G E N E R A L DESCRIPTION The Samsung KMM366F40 1 0CK is a 4Mx64bits Dynamic

Contextual Info: DRAM MODULE KMM364E40 8 4BS KMM364E40(8)4BS EDO Mode 4M x 64 DRAM DIMM Using 4M x16, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E40(8)4B is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E40(8)4B consists of four CMOS 4Mx16bits DRAMs

Contextual Info: DRAM MODULE M466F0404DT2-L M466F0404DT2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung M466F0404DT2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification

Contextual Info: DRAM MODULE KMM466F404BS2-L KMM466F404BS2-L EDO Mode 4M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404BS2-L is a 4Mx64bits Dynamic RAM high density memory module. The • Part Identification