4A MARKING TRANSISTOR Search Results

marking 4a sot-89

Abstract: sot89 MARKING 4A SOT89 transistor marking 4A 4A marking transistor MARK 4A KIA7419F transistor 4a marking MARKING 4a 4A SOT89
Contextual Info: SEMICONDUCTOR KIA7419F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 4A KIA7419F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

BC859 smd

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BC859
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E

bc860

Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Contextual Info: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F

Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors Marking BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 i Pin configuration

transistor B 560

Abstract: HFG TRANSISTOR 2SD2098 SOT89 transistor marking 4A rohm surface mounted transistor series
Contextual Info: 2SD2098 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2098; D J ^ , where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.3 V for lC/lB - 4A/0.1 A •

Contextual Info: CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor Marking PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN m m CSC2712Y*1E CSC2712GR G =*1F CSC2712BL(L)=1 G 3.0_ 2.8 “ Û.09 o3a Pin configuration 1 » BASE 2 = EM ITTER 3 = COLLECTOR 0.14 o.4a L

power transistor Ic 4A NPN smd

Abstract: transistor Ic 4A datasheet NPN smd smd 4A transistor power transistor Ic 4A datasheet NPN smd smd 4A data npn switching transistor Ic 5A transistor Ic 4A datasheet NPN FCX1047A 230NS rce marking
Contextual Info: Transistors SMD Type NPN Silicon Power Switching Transistor FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance.

Contextual Info: Transistors IC SMD Type Product specification FCX1047A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE sat 40mÙ at 4A.

TRANSISTOR BC 208

Abstract: DMN3410 J-STD-020A marking xy
Contextual Info: DMN3410 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3410 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW

TRANSISTOR BC 545

Contextual Info: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·

TRANSISTOR BC 545

Abstract: 23N40
Contextual Info: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·

TRANSISTOR BC 545

Abstract: 25C03
Contextual Info: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·

ST2300

Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23
Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

TRANSISTOR BC 545

Contextual Info: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data

ST2300

Abstract: MARKING CODE mosfet marking code 4A n channel power trench MOSFET
Contextual Info: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices

TRANSISTOR BC 545

Contextual Info: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data

Contextual Info: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data

DMN3210

Abstract: J-STD-020A
Contextual Info: DMN3210 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3210 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B

Contextual Info: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S

Contextual Info: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD X1049A NPN SILICON TRANSISTOR HIGH GAIN TRANSISTOR  FEATURES 1 * VCEV = 80V * High Gain * 20 Amps pulse current TO-220F 1 TO-92  ORDERING INFORMATION Ordering Number Lead Free Halogen Free X1049AL-TF3-T X1049AG-TF3-T X1049AL-T92-B

DZT953

Abstract: marking code IC 4A DZT853 DZT953-13 marking codes IC sot-223
Contextual Info: SPICE MODELS: DZT953 DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications

4A SOT223 MARKING CODE

Abstract: DZT953 NPN 1A 100V SOT-223
Contextual Info: DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications