4A SOT223 Search Results

ST C 236 DIODE

Abstract: N3NF06L
Contextual Info: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

STN4NE03

Contextual Info: STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

STN4NE03L

Contextual Info: STN4NE03L N - CHANNEL 30V - 0.037Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE STN4NE03L V DSS R DS on ID 30 V < 0.05 Ω 4A TYPICAL RDS(on) = 0.037 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

N3NF06L

Abstract: STN3NF06L
Contextual Info: STN3NF06L N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06L 60V <0.1Ω 4A • Exceptional dv/dt capability ■ Avalanche rugged technology ■ 100% avalanche tested ■ Low threshold drive

STN4NE03

Contextual Info: STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

N3NF06

Contextual Info: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description

N3NF06

Abstract: st MARKING E4 JESD97 STN3NF06 N-3-NF
Contextual Info: STN3NF06 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STN3NF06 60V <0.1Ω 4A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology 2 1 2 3 SOT-223 Description

Contextual Info: STN3NF06 N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 2 DESCRIPTION

STN4NE03L

Abstract: GS 669
Contextual Info: STN4NE03L N - CHANNEL 30V - 0.037Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE STN4NE03L • ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.05 Ω 4A TYPICAL RDS(on) = 0.037 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STN3NF06

Contextual Info: STN3NF06 N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 2 DESCRIPTION

P008B DIODE

Abstract: STN3NF06L
Contextual Info: STN3NF06L N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE

STN3NF06L

Contextual Info: STN3NF06L N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE

P008B DIODE

Abstract: STN4NF03L
Contextual Info: STN4NF03L N-CHANNEL 30V - 0.039Ω - 4A SOT-223 STripFET POWER MOSFET TYPE STN4NF03L • ■ VDSS RDS on ID 30V <0.05Ω 4A 2 TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,

X5T955

Contextual Info: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATOIN TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in

X5T955

Abstract: "PNP Transistor" ZX5T955G ZX5T955GTA ZX5T955GTC
Contextual Info: ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in

zxtP

Abstract: ZXTP2014G ZXTP2014GTA ZXTP2014GTC
Contextual Info: ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTP2014G

Abstract: ZXTP2014
Contextual Info: A Product Line of Diodes Incorporated ZXTP2014G Green 140V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -140V IC = -4A high Continuous Collector Current ICM = -10A Peak Pulse Current

X5T955

Contextual Info: A Product Line of Diodes Incorporated ZX5T955G Green 140V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -140V IC = -4A high Continuous Collector Current ICM = -10A Peak Pulse Current

MOS FET SOT-223 ON

Contextual Info: SSM9575 -4A, -60V,RDS ON 90mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-223 The SSM9575 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.

Contextual Info: ZX5T955G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in

Contextual Info: ZXTP2014G 140V PNP M EDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUM M ARY BV CEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

FZT705

Contextual Info: FZT705 SOT223 PIMP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FEATURES * 2W POWER DISSIPATION. * 2A C O N TIN U O U S lc. * 4A PEAK lc. * GUARANTEED H fe SPECIFIED UP TO 2A. * COMPLEM ENTARY T Y P E -F Z T 6 0 5 PARTMARKING DETAIL - FZT705 ABSOLUTE M A XIM U M RATINGS

GL9575

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/02/18 REVISED DATE : GL9575 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -60V 90m -4A Description The GL9575 provide the designer with the best combination of fast switching, ruggedized device design, low

9575 mosfet

Contextual Info: SSM9575 -4A , -60V , RDS ON 90 m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free DESCRIPTION SOT-223 The SSM9575 provide the designer with the best combination of fast switching, ruggedized device