4CP 44 Search Results

Brad Harrison

Abstract: dn60947
Contextual Info: CATALOGUE SMA LIMI Honeywell LISTING 9 I4 CE S E R I E S PRECISION SWITCH ISSUP SWITCH TYPP OPTIONS RPLPASP NUMBPR CHART MTC-CE-52 MAX- G M AX LO LU m CJ . 8 MAX — PRETRAVEC 2 HOLES 5.1 DIA C/BORE 0.2 DIA X 6 DEEP — 3 MI N OVERTRAVEC , ° ^ CC < — I

SOT89 MARKING CODE 3D

Abstract: sot89 mark code AE sot23 mark code AE 3D sot23 SOT89 marking cec SOT89 MARKING CODE 43 marking 1p sot23 sot23 p04 marking marking P1R SOT89 MARKING 5G
Contextual Info: Philips Sem iconductors Small-signal Transistors Marking MARKING LIST Types in SC59, SC70, SOT23, SOT89, SOT143, SOT223 and SOT323 packages are marked with a code as listed in the following tables. The actual type number and data code are on the packing. MARK

Contextual Info: UM142XX 300mA, Low Consumption, Wide Input Voltage Linear Regulator UM142XXS SOT23-3 UM142XXY SOT89-3 UM142XXB SOT89-3 General Description The UM142XX series are a group of positive voltage output, high precise, high PSRR and low power consumption voltage regulator. The output voltages are selectable in 100mV steps within a

2D2 SMD

Abstract: Transistor SMD 3d0 74LVCH32374A 74LVCH32374AEC SMD 3d0
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74LVCH32374A 32-bit edge-triggered D-type flip-flop with 5 V tolerant inputs/outputs; 3-state Product specification File under Integrated Circuits, IC24 1999 Nov 24 Philips Semiconductors Product specification 32-bit edge-triggered D-type flip-flop with

tape head preamp circuit

Contextual Info: XR-505/505R 5V R/W Preamplifier for 3 Terminal Recording Heads, 2 or 4 Channels GENERAL DESCRIPTION PIN ASSIGNMENT The XR-505 is a monolithic disk drive integrated circuit providing read mode preamplification, write current control, and head selection. It requires a single +5V

BC860

Abstract: BC859B 215 BC859A BC860C BC849 BC850 BC859 BC859B BC859C BC860A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC859; BC860 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 26 Philips Semiconductors Product specification

Contextual Info: O K I Semiconductor MSC23436B-XXBS36/DS36 4,194,304-Word by 36-Bit DRam Module: Fast Page Mode DESCRIPTION The OKI M SC 23436B-xxBS36/D S36 is a fully decoded 4,194,304-word x 36-bit CM OS Dynamic Random Access Memory M odule composed of thirty-six 4-M b DRAM s in SOJ MSM514100B packages mounted

Contextual Info: O K I Semiconductor MSC23836-XXBS24/DS24 í!'T C ítóíi® ¡rf 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23836-xxBS24/D S24 is a fully decoded 8,388,608-w ord x 36-bit CM OS Dynamic Random Access Memory Module com posed of sixteen 16-Mb DRAMs in SOJ M SM 5117400 packages and eight 4Mb DRAMs in SOJ (M SM 514100B) packages mounted with tw enty-four 0.2|j,F decoupling capacitors on a

Contextual Info: cO IITSU April 1997 Revision 1.2 data sh e e t ESA8UN324 2/4 (A)-(60/70)(J/T)(G/S)-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN324(2/4)(A)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM

ESA4UN3242A

Contextual Info: cO IITSU April 1997 Revision 1.1 data sh e e t ESA4UN324 2/4 (A)-(60/70)(J/T)(G/S)-S 16MByte (4M x 32) CMOS EDO DRAM Module General Description The ESA4UN324(2/4)(A)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM

rs tube

Abstract: AK 3060 ScansU9X22
Contextual Info: rm orpoH R e ctify in g d isc h a rg e tube G a sg e fü llte G le ich rich te rrö h re UA025A - nPHM EHEHHE JIaMna TECJIA UA025A »BjiaeTcs ra 30ra 30Tp0H0M c o ä h k m aHoaoM, HanoJiHeHHBiM aproHOM h paSoTaioinHM B ÄHana30He TeMnepaTypu OKpy*aK meä cpeaH o t + 7 0

UA025A

Abstract: DCG4-1000 LA 4100 bkjl DCG611000
Contextual Info: rm orpoH R e ctify in g d isc h a rg e tube G a sg e fü llte G le ich rich te rrö h re UA025A - nPHM EHEHHE JIaMna TECJIA UA025A »BjiaeTcs ra 30ra 30Tp0H0M c o ä h k m aHoaoM, HanoJiHeHHBiM aproHOM h paSoTaioinHM B ÄHana30He TeMnepaTypu OKpy*aK meä cpeaH o t + 7 0

Contextual Info: IITSU February 1997 Revision 1.0 data she e t ESA2UN321 1/4 -(60/70)(J/T)(G/S)-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA 2U N 321(1/4)-(60/70)(J/T)(G /S )-S is a high performance, EDO (Extended Data Out) 8-m egabyte dynamic RAM module

MSC23V23258D-70BS4

Abstract: MSC23V23258D-XXBS4
Contextual Info: MSC23V23258D-xxBS4 98.3.12 OKI semiconductor MSC23V23258D-XXBS4 2,097,152 Word X 32 Bit DYNAMIC RAM MODULE DE S C R IP TIO N The Oki MSC23V23258D-xxBS4 is a fully decoded, 2,097,152-word X 32 bit CMOS dynamic random access memory composed of four 16-Mb (1 Mx16) DRAMs in TSOP packages. The mounting of four DRAMs together

Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23409B/BL-xxDS9 is a fully decoded 4,194,304-word x 9-bit CMOS Dynamic Random Access Memory Module composed of nine 4-Mb DRAMs in SOJ MSM514100B/BL packages, mounted

cd74ac191

Contextual Info: Technical D a ta _ CD54/74AC191 CD54/74ÄCTT91 PO PI ASYN. P A R A L L E L 1 Presettable Synchronous 4-Bit Binary Up/Down Counter P2 P3 15 1 10 9 LO AD ENABLE Type Features: • Buffered inputs m Typical propagation delay: 12.8ns@ Vcc = 5V, TA = 25°C, CL = 50pF

M5M44500

Abstract: M5M44500CJ 9D01 M5M418160D M5M418160DJ
Contextual Info: MITSUBISHI LSIs Some of contents are subject to change without notice. > M a i i ^ m n ¿ M <• ^ ^ # o b U A • i p v p. « j / U N X > p ^ _ J - o 5- o , - 7 FAST PAGE MODE 75510432-BIT 2097512-WORD BY 36-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW)

Contextual Info: 1 PRELIMINARY a Am79468 Advanced Micro Devices Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant resistance ■ Programmable loop current detector threshold ■ On-hook transmission with -50 V to -58 V battery ■ On-chip ring relay driver

74ABT16244

Abstract: Hitachi DSA0088 Nippon capacitors
Contextual Info: HB56U172E-6C/7C/8C Preliminary 1,048,576-Word x 72-Bit High Density Dynamic RAM Module Rev. 00 May. 12, 1995 The HB56U172E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

MSM5116400

Contextual Info: O K I Semiconductor MSC23441 -xxBS10/0S10 [PreloraHDuDSF/ 4,194,304-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23441-xxBS10/D S10 is a fully decoded 4,194,304-word x 40-bit CM OS Dynamic Random Access Memory Module composed of ten 16-Mb DRAMs in SOJ MSM5116400 packages mounted with

Hitachi ED 101

Abstract: Hitachi DSA0088 74ABT16244ADGG 5151L
Contextual Info: HB56U164EJ-6C/7C/8C 1,048,576-Word x 64-Bit High Density Dynamic RAM Module Rev. 0.0 May. 22, 1995 The HB56U164EJ belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications.

PCR 406 J

Abstract: transistor pcr 406 PE2D p781 JCOP bootloader fprog II TST 9007 pcr 406 f p531
Contextual Info: WARNING: THIS DIGITAL REPRODUCTION DOES NOT MEET WITH MOTOROLA’S STANDARD FOR QUALITY While we regret the electronic source for the following document does not comply with Motorola’s standard for quality, it currently represents the best reproduction available. Improving the quality of substandard digital reproductions is a key goal. To improve the standard,

Contextual Info: <8 > MOTOROLA M C33363 A dvance Information High Voltage Switching Regulator The MC33363 is a monolithic high voltage switching regulator that is specifically designed to operate from a rectified 240 Vac line source. This integrated circuit features an on-chip 700 V/1.0 A SenseFET power switch,

V53C181608-1024

Contextual Info: MOSEL VITELIC V53C181608 1M X 16 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAc 50 ns 60 ns 70 ns Max. Column Address Access Time, (Iqaa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)