4FL5545E Search Results

DL 4770

Abstract: D0205AB International Rectifier SSC
Contextual Info: 4855452 INTERNATIONAL RECTIFIER IQ R "□s 02E 07900 D 7“ -¿>.3-«2/ Data Sheet NO. PU-2.104 in t e r n a t io n a l r e c t if ie r DE I 4fl5545E □□D7ÌG0 1 | R23DF AND R23DFR SERIES 2400-2200 VOLTS RANGE REVERSE RECOVERY TIME 2.75//S 135 AMP AVG STUD MOUNTED

Contextual Info: 4fl5545E DD1457b T7E • INR International s ] Rectifier IRC740 INTERNATIONAL RECTIFIER HEXFET® P ow er M O S FE T • • • • • • PD-9.570B Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

transistor C239

Abstract: transistor C238
Contextual Info: International HH Rectifier PD - 9.776A IRGBF20F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

BTI ML-1 94V-0

Abstract: 94V-0 BTI ML-1 BTI ML-2 94V-0
Contextual Info: I . I Bulletin 127093 rev. A 09/97 International ir k .f i 52. s e r ie s iQRRectifier FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features 150 A • F a st tu rn -o ff th y ris to r ■ Fa st re c o v e ry dio d e ■ H ig h su rge c a p a b ility

Contextual Info: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en ­ sities than com parable bipolar transistors, while

Contextual Info: INTE RNATIONAL RECTIFIER 4855452 "SS INTERNATIONAL Ì>Ì~jMfl554SE 0005157 55C RECTIFIER 05127 Data Sheet No. PD-2.040B INTERNATIONAL- R EC T IFIER I O R 75HQ, 85HQ SERIES 75 and 85 Amp Schottky Power Rectifiers Major Ratings and Characteristics Rating Characteristic

Contextual Info: International H»HRectifier P D -9 .9 3 0 IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR Fast-Speed IGBT • • • • • • Hermetically sealed Isolated Latch-proof Simple gate drive High operating frequency Switching-loss rating includes all “tail” losses

Contextual Info: S^E 405 5 4 5 2 GG13373 SOM » International S R ectifier I INR SERIES IRK.170, .230, .250 SCR I SCR and SCR / DIODE NEW MAGN-A-pak Power Modules INTERNATIONAL R E CT IF IE R Features • High voltage. ■ Electrically isolated base plate ■ 3 000 V RMS isolating voltage

1N4822

Abstract: 1N4820 1N5054 IR 20D2 1N4816 10d05 IR 10D4 IR 10D 7 7510D1 1N4817
Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL DE~| 4ÖSS4S5 DDD4clDt. 55C RECTIFIER 04906 D Data Sheet No. PD-2.004C IN T E R N A T IO N A L R E C T IF IE R IÖR <11X14816,1IM5052S10IDSSOD SERIES 1.5 and 8 .0 Amp Molded Silicon R ectifier Diodes Description/Features

scr tic 2060

Abstract: IRKT THYRISTOR THYRISTOR MODULE irkt 40 diode lt 436 TIC 2060 d291 fire angle of scr circuit irkt 350 IRKT D295
Contextual Info: m MÖSSMS2 0ülb7b3 TbO • INR International [TORJRectifier INTERNATIONAL RECTIFIER bSE » SERIES IRK.F112 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

Contextual Info: I NTERNATI ONAL R E C T I F I E R bSE D • 4Ö554S2 0 0 1 7 4 5 4 1T2 B I N R PD-2.296 International Rectifier 245NQ015 SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Characteristics ' f av Rectangular waveform V RRM Description/Features 245NQ015 Units

Contextual Info: International i» r Rectifier MÛSS4S2 GD1S01G 4b2 • INR PD-9.699A IRFD024 INTERNATIONAL RECTIFIER HEXFET Power M O S FE T Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4fi554S2 O O I Q I C H 2 ■ Schottky Rectifiers International Schottky Die @¡*1Rectifier Part Number Die A mm in. Size B mm (In.) Anode Metal Tj Max °C SC090H035A SC090H045A 2.29 (0.090) 2.29 (0.090) 2.03 (0.080) 2.03 (0.080)

74c74

Abstract: PD-2021
Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS DeTJ 4 Ö S S 4 SS D O O S 111 fl 55C 05 1 1 1 INTERNATIONAL RECTIFIER Data Sheet No. PD-2.021B INTERNATIONAL RECTIFIER I O R S 1H Q , S D 5 1 & 5 S H Q S E R IE S 6 0 Amp Schottky Power Rectifiers Major Ratings and Characteristics

irfp150

Abstract: mosfet ir 250p
Contextual Info: International ioR Rectifier HEXFET Power MOSFET “ l,8SS,S5 0D1SMtb D3T PD-9.441D IIN R IRFP150 INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling

FULL WAVE RECTIFIER and waveforms

Abstract: s70hf 85hf120 70HF 70HFI 41HF120 86HFR10 70hf120 40HF 40HF10
Contextual Info: SS INTERNATIONAL RECTIFIER 4 8 55 ^ 52 DE | 4ÖS545E 0004c14b □ | 55C INTERNATIONAL R E C T I F I E R 0*t946 Data Sheet No. PD-2.014D INTERNATIONAL RECTIFIER IÖR 40HF, 70HF, 85HF SERIES 4 0 , 7 0 and 85 Amp Power Silicon Rectifier Diodes Major Ratings and Characteristics

s34b 4d

Abstract: S34B16B International Rectifier S34B
Contextual Info: I N T E R N A T ^ W A L R ^ ^ ^ E ^ 0 ^ » ^ ,4flSS4SE D 0 D 7 7 S 7 |IQ R j in ter n a tio n a l 4855452 o uata Sheet No. PD-3.102 r e c t if ie r IN T E R N A T IO N A L D R E C T IF IE R 02E 07757 D S34B SERIES 2000-1400 VOLTS RANGE 985 AMP RMS, RING AMPLIFYING GATE

Contextual Info: 4ÛSS4SS G 0 m ti5 0 b47 H I N R PD-9.896 International @sæ]Rectifier IRF520S HEXFET Power MOSFET • • • • • • • INTERNATIONAL RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature

Contextual Info: 4 0 5 5 4 5 2 0015GB2 1Ô4 » I N R International SËr]Rectifier IRFD120 HEXFET Power MOSFET • • • • • • • PD-9.385H INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable 175°C Operating Temperature

Contextual Info: International S Rectifier PD - 2.477A 20CJQ030 SCHOTTKY RECTIFIER 2 Amp Major Ratings and Characteristics Characteristics I f a v > 20CJQ030 Units 2.0 A 30 V 400 A 0.42 V Rectangular waveform V rrm Description / Features The 20CJQ030 surface-mount Schottky rectifier has been

Contextual Info: '«! PD -9.1598 International IQR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short

Contextual Info: ~73 INTERNATIONAL RECTIFIER IO R Ì T | 4ÖSSMSS □ D D 7 1 7 CJ fi Data Sheet No. PD-2.135 in t e r n a t io n a l r e c t if ie r R23D & R23DR SERIES 1000 - 400 VOLTS RANGE 335 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS VOLTAGE

Contextual Info: 4655452 OOlSTlb O n International H ji Rectifier m i HR PD-9.846 IR L IZ 1 4 G INTERNATIO N AL R E C T IF IE R HEXFET Power MOSFET bSE » • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive