4FL554S5 Search Results

sd55a

Contextual Info: International leg Rectifier PD - 9.1092A IRLI2203G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Logic-Level Gate Drive PDS on Specified at VGs = 5 0 V & 10V

DI 944

Abstract: 942 rectifier diode
Contextual Info: Mi 4ÛS54S2 0 0 1 5 MbO b l l M I N R Rectifier IRFP140 HEXFET Power MOSFET • • • • • • • PD-9.442C INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature

Contextual Info: Provisional Data Sheet No. PD - 9.1224B international I@R Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7360SE R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET

Contextual Info: P D - 9.681 A bitemational KgLRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

s1bc

Abstract: EC120 ELNE FS18C
Contextual Info: INTERNATIONAL RECTIFIER 05 DE~| 4ÛSS45E DODTbDT 7 | I IÇ?K 1i n t e r n a t i o n a l , r e c t i f i e r T-25-19 Data Sheet No. PD-3.121 S18C & S18CH SERIES 1200-600 VOLTS RANGE 165 AMP RMS, CENTER AMPLIFYING GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS