gl ultrasonic sensor
Abstract: 95080 gl ultrasonic obstacle sensor ED-95 at 95080 IR Sensor obstacle detection schematic ultrasonic sensor IR Sensor transmitter and receiver project 1U20 GL550
Text: PREPARED BY: DATE: SPEC. No. , ED—,95080 I s~ R NaQ4k ;L. Z?, 19: IssuE / ;.<’ ~ .<., . ~-4J~e 21, 1995 ,. ., ,/’ APPROVED BY: 9 P~ges~,. ~. >-, -\, REPRESENTA*f&}ON PAGE DATE: ELECTROMC COMPONENTS GROUP SW CORPORATION } @u Q f<& ., “ ‘“d # ,’”
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IS1U20
gl ultrasonic sensor
95080
gl ultrasonic obstacle sensor
ED-95
at 95080
IR Sensor obstacle detection
schematic ultrasonic sensor
IR Sensor transmitter and receiver project
1U20
GL550
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9926C
Abstract: IPI037N06L3 s4si IPP037N06L3 G
Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K +&, Z" 1(
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IPB034N06L3
IPI037N06L3
IPP037N06L3
76BF6?
766substances.
9926C
s4si
IPP037N06L3 G
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IPB230N06L3
Abstract: IPP230N06L3 G s4si
Text: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB230N06L3
IPP230N06L3
76BF6?
IPP230N06L3 G
s4si
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380 volt 50 hz
Abstract: PMC-981070 PTR80 PM5357 LF 306-S PMC-1950820 06F04 RELAY EH-12 6222S 6308s
Text: 06 AM S/UNI-622-POS ASSP Telecom Standard Product Data Sheet Released un e, 20 04 02 :5 2: PM5357 ur sd ay ,2 4J S/UNI-622-POS Data Sheet Proprietary and Confidential Released Issue No. 6: June 2002 Do wn lo ad ed by k ha led sh eh ab of sil ico ne xp er to
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S/UNI-622-POS
PM5357
S/UNI-622-POS
PMC-1980911,
380 volt 50 hz
PMC-981070
PTR80
PM5357
LF 306-S
PMC-1950820
06F04
RELAY EH-12
6222S
6308s
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Untitled
Abstract: No abstract text available
Text: IPB081N06L3 G IPP084N06L3 G Jf]R 3 Power-Transistor Product Summary Features R#562=7@C9:897C6BF6?4JDH:E49:?82?5DJ?4 C64 R AE:>:K65E649?@=@8J7@C 4@?G6CE6CD V 9I . K R -@?>2I-' 0&) Z I9 -( 6
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IPB081N06L3
IPP084N06L3
492C86à
E6DE65
E2C86Eà
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IPP037N06L3 G
Abstract: No abstract text available
Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G 3 Power-Transistor Product Summary Features V 9I . K R#562=7@C9:897C6BF6?4JDH:E49:?82?5DJ?4 C64 R -@?>2I-' +&, Z R AE:>:K65E649?@=@8J7@C 4@?G6CE6CD
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IPB034N06L3
IPI037N06L3
IPP037N06L3
492C86à
E6DE65
E2C86Eà
IPP037N06L3 G
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Untitled
Abstract: No abstract text available
Text: IPB049N06L3 G IPP052N06L3 G Jf]R 3 Power-Transistor Product Summary Features R#562=7@C9:897C6BF6?4JDH:E49:?82?5DJ?4 C64 R AE:>:K65E649?@=@8J7@C 4@?G6CE6CD V 9I . K R -@?>2I-' ,&/ Z I9 0( 6
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IPB049N06L3
IPP052N06L3
492C86à
E6DE65
E2C86Eà
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marking xd diode
Abstract: e866 marking 8fc marking J6c s4si
Text: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K 0&) Z" -( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB081N06L3
IPP084N06L3
76BF6?
marking xd diode
e866
marking 8fc
marking J6c
s4si
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AF41
Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
Text: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C 4@? G6CE6CD I9 . K ,&/ Z" 0( 6 R I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '
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IPB049N06L3
IPP052N06L3
AF41
diode 6e
marking 8FC
diode 6d 50
56E MARKING
s4si
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E6 DIODE
Abstract: kl2 diode diode e6 4j diode
Text: DB 25-005 . DB 25-16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module 45 Square bridge Three-Phase Si-Bridge Rectifiers DB 25-005 . DB 25-16 Forward Current: 25 A
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3516 bridge rectifier
Abstract: E6 DIODE A three-phase diode bridge rectifier
Text: DB 35-005 . DB 35-16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module 45 Square bridge Three-Phase Si-Bridge Rectifiers DB 35-005 . DB 35-16 Forward Current: 35 A
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diode 1 E6
Abstract: diode 4j
Text: DB 15-005 . DB 15-16 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module 45 Square bridge Three-Phase Si-Bridge Rectifiers DB 15-005 . DB 15-16 Forward Current: 15 A
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29AHB08V1
Abstract: No abstract text available
Text: SKiiP 29AHB08V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper - %2 : -%2 0 1 . # 0 )( 56+7 1 # ; 8 4 = Values Units &+ 8)( 59'7 '+ < 8( - > ?+ $$$ @ 8(+ 1 8)+ 5A97 '+ > ?+ $$$ @ 8(+ 1 Diode - Chopper
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29AHB08V1
29AHB08V1
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semikron skiip
Abstract: 29AHB08V1
Text: SKiiP 29AHB08V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper - %2 : -%2 0 1 . # 0 )( 56+7 1 # ; 8 4 = Values Units &+ 8)( 59'7 '+ < 8( - > ?+ $$$ @ 8(+ 1 8)+ 5A97 '+ > ?+ $$$ @ 8(+ 1 Diode - Chopper
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29AHB08V1
semikron skiip
29AHB08V1
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29AHB08V1
Abstract: No abstract text available
Text: SKiiP 29AHB08V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper - %2 : -%2 0 1 . # 0 )( 56+7 1 # ; 8 4 = Values Units &+ 8)( 59'7 '+ < 8( - > ?+ $$$ @ 8(+ 1 8)+ 5A97 '+ > ?+ $$$ @ 8(+ 1 Diode - Chopper
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29AHB08V1
29AHB08V1
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4j diode
Abstract: diode 4j
Text: SKiiP 29AHB08V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Chopper - %2 : -%2 0 1 . #
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29AHB08V1
4j diode
diode 4j
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FZ2400R12HP4_B9
Abstract: FZ2400R12HP4 WO10 2sd88
Text: Technische Information / technical information FZ2400R12HP4_B9 IGBT-Module IGBT-modules IHM-B Modul mit soft schaltendem Trench-IGBT4 IHM-B module with soft-switching trench-IGBT4 +,-. / ! + , 012 / 3 4 ,56 / 3" 4 Typical Applications • • • 7 = 8 9 %
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FZ2400R12HP4
FZ2400R12HP4_B9
WO10
2sd88
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DIN 16901 130
Abstract: DIN 16901 140 DIN 16901 ISO 2768 fK FS225R12KE4 DIN ISO 2768-M
Text: Technische Information / technical information FS225R12KE4 IGBT-Module IGBT-modules EconoPACK + B-Serie Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode EconoPACK™+ B-series module with trench/fieldstop IGBT4 and optimized EmCon diode IGBT-Wechselrichter / IGBT-inverter
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FS225R12KE4
DIN 16901 130
DIN 16901 140
DIN 16901
ISO 2768 fK
FS225R12KE4
DIN ISO 2768-M
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GW45HF60WD
Abstract: 45hf60 gw45hf60 STGW45HF60WDI 45HF60WD 45HF60WDI STGWA45HF60WDI STGW45HF60WD schematic diagram for welding induction gw45hf60wdi
Text: STGW45HF60WDI 45 A, 600 V ultra fast IGBT with low drop diode Features • Improved Eoff at elevated temperature ■ Low VF soft recovery antiparallel diode Applications ■ Welding ■ Induction heating ■ Resonant converters 2 3 1 TO-247 Description The STGW45HF60WDI is based on a new
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STGW45HF60WDI
O-247
STGW45HF60WDI
GW45HF60WDI
STGWA45HF60WDI
45HF60WDI
GW45HF60WD
45hf60
gw45hf60
45HF60WD
45HF60WDI
STGWA45HF60WDI
STGW45HF60WD
schematic diagram for welding induction
gw45hf60wdi
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BUZ100
Abstract: No abstract text available
Text: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A
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O-220
BUZ100L
C67078-S1354-A2
BUZ100
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MARKING CODE dipped polyester capacitors
Abstract: MAG45 VX CAPACITOR YELLOW RK Tyco
Text: m s aumnQ is i*#4j*jsrco. <£ Ctt*mKr - _ I t ! * * | m nrtfm ^ Mi. Q4T IAA 22 TOT 05JUN2008I QL REV PER E C Q -O a -Q 1 5 * 6 * MECHANICAL: / 1 \ MATERIALS: - H O U S I N G - T H E R M O P L A S T I C P E T P O L Y E S T E R F L A M M A B I L I T Y R A T I N G UL 9 4 V - 0
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iag45tmÃ
C26800
10QOpF,
1/16W
MARKING CODE dipped polyester capacitors
MAG45
VX CAPACITOR YELLOW
RK Tyco
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BRY46
Abstract: fxs 100 10 trigger diode Tetrode pnpn
Text: Silicon 4-Layer Diodes, Trigger Diodes, Tetrode Thyristor S ilicon PN PN 4 - Layer Diodes for flip-flops, com puterand switching circuits A ll ty p e s are a v a ila b le to m ilita ry s p e c ific a tio n : in s e rt 'M ' in th e ty p e n u m b e r, e.g. 4 E 2 0 M - 8
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BRY46
fxs 100 10
trigger diode
Tetrode pnpn
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DIODE MOTOROLA 2101
Abstract: marking 4p sot23 MMBV2104 Diode marking 4R MMBV2102 MMBV2100 MMBV diode marking 4p MMBV2106 diode marking 4K
Text: 34 MOTOROLA SC {DIODE S/ OP T O} 6367255 MOTOROLA SC DE"|b3b7255 003Û3S3 5 <D I O D E S / O P T O 3<tC 3 8 3 5 3 D SOT23 continued) d e v ic e no. MMBV2097 thru MMBV2109 SMALL-SIGNAL TUNING DIODES T 0 P VIEW | i • D esigned for general-frequency control and tuning applications.
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b3b7255
MMBV2097
MMBV2109
MMBV-2097
MMBV-2098
MMBV-2099
MMBV-2100
MMBV-2101
MMBV-2102
MMBV-2103
DIODE MOTOROLA 2101
marking 4p sot23
MMBV2104
Diode marking 4R
MMBV2102
MMBV2100
MMBV
diode marking 4p
MMBV2106
diode marking 4K
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OL-700
Abstract: Optoisolator L7559
Text: H A M A M A T S U HAMAMATSU PHOTONICS K.K. SOLID STATE DIVISION 1126-1 ICHINO-CHO, HAMAMATSU CITY 435, JAPAN TELEPHONE : 053-434-3311 FAX : 053-434-5184 Aug. 1998 Preliminary Datasheet Hamamatsu IR-LED Array Type no. L7559 L7559 consists of 6 LED chip specially designed for
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L7559
L7559
100mA
KLED600I7JA
Tl-25
KLEDA002UA
OL-700
Optoisolator
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