4J SOT23 Search Results

IC103

Abstract: MT38A araa FMMT38A FMMT38B FMMT38C CJKL
Contextual Info: m SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON ISSUE 2- JANUARY TRANSISTORS 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS - ABSOLUTE MAXIMUM FMMT38A - 4J FMMT38B - 5J FM MT38C - 7.J RATINGS. PARAMETER Collector-Base Voltage

Contextual Info: FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp PARTMARKING DETAILS – E C FMMT38A – 4J

Contextual Info: FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 - JANUARY 1996_ FEATURES * * 60 Volt VCE0 Gain of 10K at lc=0.5 Amp PARTMARKING DETAILS - FMMT38A - 4J F M M T 3 8B -5 J F M M T 3 8 C -7 J

t38b

Abstract: MT38A
Contextual Info: FMMT38A FMMT38B FMMT38C 3 - 101 FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR M E D IU M POW ER DARLINGTON T R A N SIST O R S ISSUE 3 -AUG UST 1996 FEATURES * * 60 Volt V CE0 Gain of 10K at lc=0.5 A m p P A R T M A R K IN G D E T A IL S - F M M T 3 8 A - 4J

Contextual Info: FMMT38A FMMT38B FMMT38C SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JA N U A R Y 1996 FEA TU R ES * 6 0 V o lt V CE0 * G a in o f 1 0 K a t !c = 0 .5 A m p P A R T M A R K IN G D E T A IL S - F M M T 3 8 A - 4J F M M T 3 8 B - 5J

DIODE MOTOROLA 2101

Abstract: marking 4p sot23 MMBV2104 Diode marking 4R MMBV2102 MMBV2100 MMBV diode marking 4p MMBV2106 diode marking 4K
Contextual Info: 34 MOTOROLA SC {DIODE S/ OP T O} 6367255 MOTOROLA SC DE"|b3b7255 003Û3S3 5 <D I O D E S / O P T O 3<tC 3 8 3 5 3 D SOT23 continued) d e v ic e no. MMBV2097 thru MMBV2109 SMALL-SIGNAL TUNING DIODES T 0 P VIEW | i • D esigned for general-frequency control and tuning applications.

10 amp npn darlington power transistors

Abstract: FMMT38C FMMT38B 100 amp npn darlington power transistors FMMT38A DSA003692
Contextual Info: FMMT38A FMMT38B FMMT38C ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS I /I =100 C - Normalised Gain 1.6 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C h V - Volts 1.0 B 0.2 0.001 0.01 0.1 1 1.4 0.8 CE 0.4 -55°C

FMMT38A

Abstract: FMMT38B FMMT38C
Contextual Info: FMMT38A FMMT38B FMMT38C ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS 1.6 hFE - Normalised Gain 1.0 VCE sat - (Volts) VCE=5V IC/IB=100 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C 0.2 0.001 0.01 0.1 1 0.6

FMMT38A

Abstract: FMMT38B FMMT38C FE500
Contextual Info: FMMT38A /B Not Recommended for New Design Please Use FMMT38C FMMT38A FMMT38B FMMT38C ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS VCE=5V IC/IB=100 1.6 hFE - Normalised Gain VCE sat - (Volts) 1.0 -55°C

transistor marking hy

Abstract: PHV6 KDu TRANSISTOR 7L SOT23 MARKING QV sot23 7L Marking 990L marking hu sot23 STT3PF20V
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS 9 RDS on W # W # ID 9 9 $ TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE (2.7V) STANDARD OUTLINE FOR EASY

marking KAY SOT-23

Contextual Info: BAS40 . BAS40-06 Silicon Schottky Barrier Diodes These diodes feature very low tum-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as elec­ trostatic discharges. Top View m m | 0.95 0.95|

MBD352

Contextual Info: DUAL SILICON HOT-CARRIER DIODES SCHOTTKY BARRIER DIODES MMBD352LT1* CASE 318-07, STYLE 11 SOT-23 (TO-236AB) . designed prim arily for UHF mixer applications, but suitable also for use in detector and ultra-fast switching circuits. • The Rugged Schottky Barrier Construction Provides Stable Characteristics

MMBD501

Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2

Contextual Info: r 6 3 6 7 2 5 5 M O TO RO LA S C D IO D E S / O P T O Tfi 980 78628 DE|b3b7HS5 P _ T - 0 7-/9 DOTahEâ t T -fH l SOT-23 D IO D E S (continued) Zener Diodes (continued) Pinout: 1-Anode, 2-NC, 3-Cathode VZ i Volts Vz2 Volts V Z3 Volts «1 : iz mA <Z2 1 1

47 16S P6

Contextual Info: SEM ICONDUCTOR KRA116S-KRA122S TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A ND DRIVER CIRC U IT A PPLICATIO N L FEA T U RE S lì L DIM • With Built-in Bias Resistors. • Simplify Circuit Design.

101dbp

Contextual Info: EBAlpha Plastic Packaged Limiter Diodes SMP1330 Series Features O u t l i n e D ra w in g • Characterized Limiter Performance 500 MHz to 2 GHz SOT-23 -0.0 30 0.8 mm in ■ Low Insertion Loss s - m r ■ Low Distortion 0.035 (.9 mm) 3 PLCS. ■ Low Cost Plastic Packages

MV2107

Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
Contextual Info: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.

Contextual Info: DB3X313K Silicon epitaxial planar type Unit: mm For small current rectification DB2J313 in Mini3 type package • Features  Low forward voltage VF and small reverse current IR  Low terminal capacitance Ct  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant

MV2107

Abstract: BV2108 MV2113 BV-2108
Contextual Info: MOTOROLA SEMICONDUCTOR MMBV2101L thru MMBV2109L MV2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 MMBV2101L thru MMBV2109L C A SE 182-02

Contextual Info: Doc No. TT4-EA-14659 Revision. 1 Product Standards Schottky Barrier Diode DB3Y313KEL DB3Y313KEL Silicon epitaxial planar type Unit : mm For small current rectification DB3X313K in NMini3 type package 2.9 0.4 0.13 • Features 3 1.4 2.4  Low forward voltage and small reverse leakage current

marking code SS SOT23

Abstract: marking code SS SOT23 transistor
Contextual Info: 3STR1630 Low voltage high performance NPN power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package ECOPACK 2 grade for surface mounting circuits

SMBD2837

Abstract: 550 SOT143 br sot-143 SMBD2836
Contextual Info: Diodes For com plete package outlines, refer to pages PO-1 through PO-6 General Purpose, Switching and Rectifier Type BAL74 BAL99 BAR74 BAR99 BAS 16 BAS16W BAS 19 BAS20 BAS21 BAS28 BAS78A BAS78B BAS78C BAS78D BAS79A BAS79B BAS79C BAS79D BASI 16 BAV70 BAV70W

mark E4 SOT-23-5

Abstract: E4 SOT-23-5 marking code B2 SOT-23-5 sot-23-5 marking B2 SOT-89 marking E3 mark A E sot-89-3 404 sot SOT-23-5 MARKING b4 sot-23-5 Micropower Voltage Regulator SOT-23-5 MARKING b4 boost
Contextual Info: “ Semiconductor, Inc. TC46 Series VOLTAGE REGULATOR LOW DROPOUT, LOW CURRENT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TC46 Series are high accuracy 3-terminal CMOS voltage regulators. Output currents extend to 80mA, with quiescent currents around 1|xA. The design features very

marking u3j

Abstract: SOT223 6 pin smb marking U3j marking 0f sot143 244 u3d ae SMC MARKING motorola dpak top marking 360 u3j
Contextual Info: MOTOROLA h SEMICONDUCTOR TECHNICAL DATA MURS320T3 MURS360T3 Su rface M ou n t U ltrafast Pow er Rectifiers Motorola Pi«ferrad DevtcM . . . employing state-of-the-art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes,