4LC4M Search Results

j13000

Abstract: dram 4mx4 DD01B J1-30004-A LM 327 CN til 702 datasheet 4lc4m4e0 4c4m4 29SF
Contextual Info: H igh P erform an ce 4M x4 CMOS DRAM « II Features • Organization: 4,194,304 words x 4 bits • High speed A S4C 4M 4E0 A 4LC4M 4E0 4M X 4 CMOS EDO DRAM Advance information JEDEC standard package - 400 mil, 24/26-pin SOJ 5V power supply 4C4M4E0 3V power supply (4LC4M4E0)

Contextual Info: Advance information Features • O rganization: 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits • H ig h speed - 50/6 0 ns RAS access time - 2 5/ 3 0 ns column address access time - 10/12 ns CAS access time • Low p o w er consum ption - Active: 908 mW max - Standby: S.S mW max, CMOS I/O

4lc4m4e0

Contextual Info: H i ” li P e r l o m i a i H r •■ \S4 4M 4H II AS4I C 4 M 4 I 0 Jl A 4M X4 CMOSDRAM t M x 4 C M O S I.IH) DRAM Advance information Features • TTL-compatible, three-state I/O • JEDEC standard package • Organization: 4,194,304 words x 4 bits • High speed

Contextual Info: MICRON 4M E Gx4 . FPM DRAM DRAM 4LC4M4B1, 4LC4M4A1 For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html

Contextual Info: A H i” li Pi r t o r n i a i K e 4M X4 CMOS DRAM « II AS4I C 4 M 4 S 0 4 M x 4 C M O S Synchronous DR/IM Advance information Features • • • • O rganization: 2 ,0 9 7 ,1 5 2 w ords x 4 bits x 2 banks All signals reference to positive edge o f d o c k

Contextual Info: 4 MEG X 4 FPM DRAM MICRON I TECHNOLOGY. INC. 4LC4M4B1, MT4C4M4B1 4LC4M4A1, MT4C4M4A1 DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-perform ance, low pow er CMOS silicon-gate process • Single pow er supply +3.3V +0.3V or +5V +10%

2MX4

Contextual Info: H ig h p e r fo r m a n c e 4M x4 CMOS DRAM H 4LC4M 4S0 A 4 M x 4 C M O S sy n c h ro n o u s D RA M Advance inform ation Features • • • • • • • • • Burst re a d /w rite , single w rite • Can assert ran d o m colum n address in every cycle

Contextual Info: H igh Pi'rfn rm .iiK c 4 M X-J CM O S DRAM a| \S4I 4 M 4 S 0 A 4.VIX4 CMOS Synchronous UK,AM Advance inform ation Features O rganization: 2 ,0 9 7 ,1 5 2 w ords x 4 bits x 2 banks All signals reference to positive edge o f clock Dual internal banks (controlled by BA

Contextual Info: II. H igh perform ance 4M x4 CMOS DRAM •■ 4LC4M4S0 II 4 M x 4 CMOS synchronous DRAM Advance information Features • • • • • • • • • Burst re a d /w rite , single w rite • Can assert ran d o m colum n address in every cycle • LVTTL com patible I / O

Contextual Info: H ig h P e r f o r m a n c e 4M X 4 CM OS DRAM » H A S4C 4M 4E0 A S4L C 4M 4E 0 4 M X 4 CMOS EDO DRAM Advance information Features • O r g a n iz a t io n : 4 , 1 9 4 , 3 0 4 w o r d s x 4 b its JED EC s ta n d a r d p a c k a g e • H ig h s p e e d - 4 0 0 m il, 2 4 /2 6 - p i n SOJ

MT4LC4

Contextual Info: PRELIMINARY MICRON I SEMICONDUCTOR, 4LC4M4A1/B1 S 4 MEG X 4 DRAM INC DRAM 4 MEG x 4 DRAM 3.3V FAST-PAGE-MODE, OPTIONAL SELF REFRESH FEATURES • JEDEC and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process

MT4LC4M4G6

Contextual Info: PRELIMINARY MT4LC4IW4GS 4 M EG x4 BURSTEDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V

Contextual Info: Advance information Features • • • • • • • • Organization: 2 ,0 9 7 ,1 5 2 w ords x 4 bits x 2 banks All signals referenced to positive edge o f clock Dual internal banks controlled by BA H igh speed - 100/83 MHz bus speeds - 8/10 ns dock access time

4lc4m16

Abstract: sdram 4 bank 4096 16 AS4LC4M16S0 4m16
Contextual Info: Advance information AS4LC8M8S0 4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Features • PC100/133 compliant • Organization - 2,097,152 words x 8 bits × 4 banks 8M×8 - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous