4MBIT EPROM Search Results

MSM6650

Contextual Info: O K I Semiconductor E2D5087-17-50 MSM6650 4MegOTP l/F BOARD 4MegOTP Conversion Board 1. BOARD APPEARANCE 2. BOARD SETTING D 4Mbit EPROM Socket Insert a 4Mbit EPROM, which is programmed with the voice data through voice analysis. XT/W Z Select jumpers These jumpers are used to select ceramic oscillation or RC oscillation.

UV-eprom programmer schematic

Abstract: 27 eprom programmer schematic EPROM 30 pin programmer schematic xc9536 cpld xilinx xc9536 Schematic XAPP079 4mbit prom ADR14 XC9536 HW-130
Contextual Info:  XAPP079 September, 1997 Version 1.2 4Mbit Virtual SPROM Application Note Summary This application note describes the design of a very low cost, CPLD-based virtual SPROM for downloading programming information to the Xilinx high density XC4000-Series FPGAs.

Contextual Info: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification

Contextual Info: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)

Contextual Info: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)

39LV010

Abstract: 39lv512 PM39LV010-70VCE 39LV020 pm39lv512-70vce PM39LV512-70JCE PM39LV040-70JCE PM39LV040-70VC S5580 PM39LV010-70JCE
Contextual Info: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification

MSM6650

Contextual Info: E2D0087-39-21 This version: I/F Feb. 1999 MSM6650 4MegOTP BOARD Previous version: May 1997 ¡ Semiconductor MSM6650 4MegOTP I/F BOARD ¡ Semiconductor 4MegOTP Conversion Board 1. BOARD APPEARANCE t MSM6650/EPROM EVA ON OFF w STD CPU PARA SIRI r XT CR e 4Mbit EPROM

PMC 39LV040

Abstract: 39lv512 39lv040 PM39LV512 PM39LV010-70VCE PM39LV040 39LV010 Programmable Microelectronics 11000H 70Vce
Contextual Info: PMC Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification

Contextual Info: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)

Contextual Info: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification

MR27V401D

Abstract: MR27V401DMA MR27V401DRA MR27V401DTA
Contextual Info: ¡ Semiconductor 1A MR27V401D 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V401D is a 4Mbit electrically Programmable Read-Only Memory organized as 524,288 word x 8bit. The MR27V401D operates on a single +3V-3.3V power supply and is TTL compatible.

MR27V401D

Contextual Info: ¡ Semiconductor 1A MR27V401D 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V401D is a 4Mbit electrically Programmable Read-Only Memory organized as 524,288 word x 8bit. The MR27V401D operates on a single +3V-3.3V power supply and is TTL compatible.

IS39LV010

Abstract: A114 ESD IS39LV040
Contextual Info: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)

Contextual Info: ¡ Semiconductor MR27V401D 1A Preliminary 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V401D is a 4Mbit electrically Programmable Read-Only Memory organized as 524,288 word x 8bit. The MR27V401D operates on a single +3V-3.3V power supply and is TTL compatible.

MR27V402D

Contextual Info: ¡ Semiconductor 1A MR27V402D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V402D is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MR27V402D

MR27V402D

Abstract: MR27V402DMP MR27V402DRP MR27V402DTP
Contextual Info: ¡ Semiconductor 1A MR27V402D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V402D is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MR27V402D

W39L040

Contextual Info: Preliminary W39L040 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are

ES29LV400EB-70TGI

Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations

Contextual Info: W29D040C 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29D040C is an 4Mbit, 5-volt only CMOS flash memory organized as 512K x 8 bits. For flexible erase capability, the 4 Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The byte-wide × 8

ES29LV400D

Abstract: ES29LV400DT-70RTG ES29LV400DB-70RTG
Contextual Info: EE SS II Excel Semiconductor inc. ES29LV400D 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations

32kx8 sram

Abstract: 2kx8 sram comet cmt BS9450 CE5 chip mme eprom
Contextual Info: C T S CORP MME D 17ñlS O b 00030^7 S icm Series CqMqT memory hr- ' 33 > H C a B B igELj, J U MHUJ. CoMeT™ memory • Up to 4Mbit capacity in EEPROM, EPROM, Flash EPROM or SRAM • Can be configured as 8 ,1 6 or 32 bit words by the user • Technologies can be mixed on a

4mbit eprom

Abstract: MSM6650 4NC16
Contextual Info: J2D0087-38-Z1 作成：1998年12月 前回作成：1997年 3月 ¡ 電子デバイス MSM6650 4MegOTP 変換ボード l MSM6650 4MegOTP I/F BOARD 4MegOTP 変換ボード 1. 外観図 t MSM6650/EPROM EVA ON OFF w XT CPU STD PARA SIRI r CR e 4Mbit EPROM MSM6650

MR27V452D

Abstract: SOP40 prom 4mbit eprom MR27V452DMP MR27V452DRP MR27V452DTP
Contextual Info: ¡ Semiconductor 1A MR27V452D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V452D is a 4Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit.

00FF

Abstract: MR27V452D
Contextual Info: ¡ Semiconductor 1A MR27V452D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V452D is a 4Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit.