SM81600E
Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42SM81600E
IS42SM16800E
IS42SM32400E
IS42RM81600E
IS42RM16800E
IS42RM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
SM81600E
IS42SM16800E-7TLI
IS42SM32400E-7T
IS42SM16800E-7BLI
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Untitled
Abstract: No abstract text available
Text: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1
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CMS4A32LAxâ
4Mx32)
160ns
350uA
400uA
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Untitled
Abstract: No abstract text available
Text: FMD4A32LCx–30Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft
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FMD4A32LCxâ
4Mx32)
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IS42VM81600E
Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Text: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42VM81600E
IS42VM16800E
IS42VM32400E
IS45VM81600E
IS45VM16800E
IS45VM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
IS42VM32400E-75TL
IS42VM16800E-75BLI
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NT5DS4M32EF-25
Abstract: NT5DS4M32EF-28 NT5DS4M32EF-33 NT5DS4M32EF-4
Text: NT5DS4M32EF 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.
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NT5DS4M32EF
4Mx32
128Mbit
32Bit
144-Ball
144-Balla
NT5DS4M32EF-25
NT5DS4M32EF-28
NT5DS4M32EF-33
NT5DS4M32EF-4
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K4S283234F-M
Abstract: No abstract text available
Text: K4S283234F-M CMOS SDRAM 4Mx32 SDRAM 90FBGA VDD 2.5V, VDDQ 2.5V Revision 0.1 November 2001 Rev. 0.1 Jan. 2002 K4S283234F-M CMOS SDRAM Revision History Revision 0.0 (Nov. 16. 2001, Final) • Final generation for 4Mx32 2.5V SDRAM FBGA. Revision 0.1 (Jan. 14. 2002, Final)
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K4S283234F-M
4Mx32
90FBGA
32Bit
K4S283234F-M
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HY6V22F-33
Abstract: No abstract text available
Text: HY6V22F 128M 4Mx32 DDR SDRAM HY6V22F Revision 0.5 June 2001 Rev. 0.5 / June. 01 This document is a general product description and is subject to change without notice. 128Mb (4Mx32) Double Data Rate SDRAM HY6V22F Revision History 1. Rev 0.4 ( May.01) - Part Number changed from HY5DV283222F to HY6V22F
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HY6V22F
4Mx32)
128Mb
HY5DV283222F
HY6V22F-33
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Untitled
Abstract: No abstract text available
Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with
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WED9LC6816V
256Kx32
SSRAM/4Mx32
TMS320C6000
WED9LC6816V
4Mx32
4Mx16
TMS320C6201
TMS320C6201
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4Mx32 dram simm
Abstract: HMD4M32M2VE
Text: HANBit HMD4M32M2VE 16Mbyte 4Mx32 DRAM SIMM EDO MODE, 4K Refresh, 3.3V Part No. HMD4M32M2VE, HMD4M32M2VEG GENERAL DESCRIPTION The HMD4M32M2VE is a 4M x 32 bit dynamic RAM high-density memory module. The module consists of two CMOS 4M x 16 bit DRAMs in 50-pin TSOP packages mounted on a 72-pin. A 0.1 or 0.22uF decoupling capacitor is mounted on
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HMD4M32M2VE
16Mbyte
4Mx32)
HMD4M32M2VE,
HMD4M32M2VEG
HMD4M32M2VE
50-pin
72-pin.
72-pin
HMD4M32M2VE----Lead
4Mx32 dram simm
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HY5DS283222BF
Abstract: HY5DS283222BFP-33
Text: HY5DS283222BF P 128M(4Mx32) GDDR SDRAM HY5DS283222BF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DS283222BF
4Mx32)
1HY5DS283222BF
350Mhz
HY5DS283222
728-bit
144ball
HY5DS283222BFP-33
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WF4M32-XXX5
Abstract: No abstract text available
Text: White Electronic Designs WF4M32-XXX5 PRELIMINARY* 4Mx32 5V FLASH MODULE FEATURES Access Times of 100, 120, 150ns Packaging: • 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP Package 402 . • 68 lead, 40mm Low Profile CQFP (Package 502), 3.5mm (0.140") height.
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WF4M32-XXX5
4Mx32
150ns
990CQFJ
64KBytes
4Mx32
2x4Mx16
WF4M32-XXX5
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SIMM FLASH MEMORY MODULE 72pin
Abstract: No abstract text available
Text: HANBit HMF4M32M8V Flash-ROM Module 16MByte 4Mx32Bit , 72Pin-SIMM, 3.3V Design Part No. HMF4M32M8V GENERAL DESCRIPTION The HMF4M32M8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x32bit configuration. The module consists of eight 2M x 8bit FROM mounted on a 72 -pin, double -sided, FR4-printed circuit
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HMF4M32M8V
16MByte
4Mx32Bit)
72Pin-SIMM,
HMF4M32M8V
x32bit
HMF4M32M8V-70
SIMM FLASH MEMORY MODULE 72pin
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HMD4M32M8EG
Abstract: No abstract text available
Text: HANBit HMD4M32M8EG/8EAG 16Mbyte 4Mx32 72-pin EDO MODE, 2K/4K Ref. SIMM Design 5V Part No. HMD4M32M8EG, HMD4M32M8EAG GENERAL DESCRIPTION The HMD4M32M8E is a 4M x 32 bit dynamic RAM high-density memory module. The module consists of eight CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board.
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HMD4M32M8EG/8EAG
16Mbyte
4Mx32)
72-pin
HMD4M32M8EG,
HMD4M32M8EAG
HMD4M32M8E
24-pin
72-pin,
HMD4M32M8EG
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IS42SM16800E-6BLI
Abstract: No abstract text available
Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM DECEMBER 2010 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42SM81600E
IS42SM16800E
IS42SM32400E
IS42RM81600E
IS42RM16800E
IS42RM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
IS42SM16800E-6BLI
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HY5DU283222Q
Abstract: HY5DU283222Q-4 HY5DU283222Q-45 HY5DU283222Q-5 HY5DU283222Q-55
Text: HY5DU283222Q 128M 4Mx32 GDDR SDRAM HY5DU283222Q This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Oct. 02
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HY5DU283222Q
4Mx32)
222MHz
200/183MHz
166MHz
250MHz
100pin
HY5DU283222Q
HY5DU283222Q-4
HY5DU283222Q-45
HY5DU283222Q-5
HY5DU283222Q-55
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IS42S16160B(D)-7TL
Abstract: No abstract text available
Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge
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IS42SM81600E
IS42SM16800E
IS42SM32400E
IS42RM81600E
IS42RM16800E
IS42RM32400E
16Mx8,
8Mx16,
4Mx32
128Mb
IS42S16160B(D)-7TL
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Untitled
Abstract: No abstract text available
Text: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.
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NT5DS4M32EG
4Mx32
128Mbit
32Bit
144-Ball
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Untitled
Abstract: No abstract text available
Text: NT5DS4M32EG 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA with Pb Free Nanya Technology Corp. NTC reserves the right to change products or specification without notice.
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128Mbit
32Bit
144-Ball
144-Balls
80x11
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Untitled
Abstract: No abstract text available
Text: NT5DS4M32EF 4Mx32 Double Data Rate SDRAM 128Mbit DDR SDRAM 1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM With Bi-directional Data Strobe and DLL 144-Ball FBGA Nanya Technology Corp. NTC reserves the right to change products or specification without notice.
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NT5DS4M32EF
4Mx32
128Mbit
32Bit
144-Ball
144-Balls
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Untitled
Abstract: No abstract text available
Text: a WPS4M 32-35MSC M/HITE /MICROELECTRONICS 4Mx32SRAM MODULE ADVANCED* FEATURES • ■ A ccess Tim e of 35ns ■ Packaging ■ B yte C ontrol Chip S elects Fully S ta tic O peration • No C lock or Refresh required • M o d u le is m a nufa cture d w ith eig h t 512Kx32 SRAM
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32-35MSC
4Mx32SRAM
512Kx32
72-PIN
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Untitled
Abstract: No abstract text available
Text: WHITE /MICROELECTRONICS V Z Ä WPF29161-120X7X1 16MBYTE 4Mx32 FLASH (5VSupply; 5V or 12V Program) SIM M MODULE P R E L IM IN A R Y * FEATURES GENERAL DESCRIPTION • A cce s s T im e of 120ns The W h i t e M ic r o e le c tro n ic s W P F 2 9 1 61-120X7X1 is a 4 M x 32 bits
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WPF29161-120X7X1
16MBYTE
4Mx32)
120ns
61-120X7X1
WPF291B1-120X7XI
80-pin
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Untitled
Abstract: No abstract text available
Text: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification
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KMM332F400CS-L
KMM332F41OCS-L
KMM332F410CS-L
KMM332F40
4Mx32bits
KMM332F400CS-L5/L6
24-pinTSOPII
72-pin
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Untitled
Abstract: No abstract text available
Text: WF4M32-XXX5 UVHITE /M IC R O E L E C T R O N IC S 4Mx325V FLASH MODULE ADVANCED* FEATURES • Access Tim es o f 1 0 0 ,1 2 0 ,150nS ■ Packaging: ■ User co n fig u ra b le as 8 M x1 6 or 16M x8 in HIP and G4T packages. ■ • 66-pin, PGA Type, 1.385 inch square, H erm etic C eram ic HIP
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WF4M32-XXX5
4Mx325V
150nS
66-pin,
64KBytes
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Untitled
Abstract: No abstract text available
Text: ça WHITE /MICROELECTRONICS WF4M32-XXX5 4MX32 5V FLASH MODULE, SMD 5962-97531 pending PRELIMINARY* FEATURES • Access Times of 1 0 0 ,1 2 0 ,150ns ■ User configurable as 8Mx16 or 16Mx8 in HIP and G4T packages. ■ Packaging: • 66-pin, PGA Type, 1.385 inch square, Hermetic Ceramic
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WF4M32-XXX5
4MX32
150ns
8Mx16
16Mx8
66-pin,
01HXX*
64KByte
120ns
02HXX*
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