4MX32 DRAM SIMM Search Results

Contextual Info: HYM532410C M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410C M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling

HY5117404C

Abstract: HYM532414C HYM532414CM HYM532414CMG DEC-97
Contextual Info: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

HYM532414BM

Abstract: HY5117404B
Contextual Info: HYM532414B M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

HYM532410BM

Abstract: HY5117400B HYM532410B HYM532410BMG HYM532410
Contextual Info: HYM532410B M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410B M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling

HYM532410CM

Abstract: HY5117400C HYM532410C HYM532410CMG
Contextual Info: HYM532410C M-Series 4Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532410C M-Series is a 4Mx32-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling

HYM532414CM

Abstract: HY5117404C HYM532414C HYM532414CMG HYM532414
Contextual Info: HYM532414C M-Series 4Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

KMM5324004CSW

Abstract: KMM5324004CSWG
Contextual Info: DRAM MODULE KMM5324004CSW/CSWG 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5324004CSW/CSWG DRAM MODULE KMM5324004CSW/CSWG

Contextual Info: DRAM MODULE KMM5324000CSW/CSWG 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5324000CSW/CSWG DRAM MODULE KMM5324000CSW/CSWG

Contextual Info: DRAM MODULE M53230404CY0/CT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230404CY0/CT0-C DRAM MODULE M53230404CY0/CT0-C

Contextual Info: DRAM MODULE M53210404CY0/CT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210404CY0/CT0-C DRAM MODULE M53210404CY0/CT0-C

KM44C4100AJ

Abstract: KM44C4100A KMM5324100AV
Contextual Info: DRAM MODULE_ j _ 16 Mega Byte KMM53241OOAV/AVG Fast Page Mode / 4Mx32 DRAM SIMM , 2K Refresh , 5V / Using 16M DRAM with 400 mil Package . GENERAL DESCRIPTION FEATURES The Samsung KMM53241OOAV is a 4M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: -H YU N D AI > • H Y M 5 3 2 4 1 4 B M - S e r ie s 4MX32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414B M-Series is a 4Mx32-bit Extended Data Out mode CMOS DRAM module consisting of eight HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 h F and 0.01 nF

Contextual Info: DRAM MODULE 16 Mega Byte KMM5324000AK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324000AK is a 4M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: KM M5324000B K/B KG KMM53241OOBK/BKG DRAM MODULE KMM5324000B K/B KG & KMM53241 OOBK/BKG Fast Page Mode 4Mx32 DRAM SIMM, 4K & 2K Refresh, using 16M DRAM with 300 mil Package FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM53240 1 00BK is a 4M bit x 32

Contextual Info: DRAM MODULE / 16 Mega Byte KM M5324000CV/CVG Fast Page Mode 4Mx32 DRAM SIMM Using 4Mx1 DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324000CV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000CV consists of thirty two CMOS 4Mx1bit DRAMs in 20-pin SOJ packages

Contextual Info: DRAM MODULE M53210404BY0/BT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53210404BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: DRAM MODULE M53230404BY0/BT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.1 June 1998 DRAM MODULE M53230404BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

Contextual Info: KMM5324004BK/BKG KMM5324104BK/BKG DRAM MODULE KMM5324004BK/BKG & KMM5324104BK/BKG Fast Page with EDO Mode 4Mx32 DRAM SIMM, 4K & 2K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM53240 1 04BK is a 4M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE 16 Mega Byte KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package . G EN E R A L D ES C R IPTIO N FEATURES • Performance Range: The Sam sung KMM5324000AV is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns

M53241

Contextual Info: DRAM MODULE 16 Mega Byte X KMM53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE 16 Mega Byte KM M5324000AV/AVG Fast Page Mode 4Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package . G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5324000AV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000AV consists of eight CMOS

44C4104

Abstract: KMM5324004BK kmm5324104 44C4104BK EZ 720
Contextual Info: KMM5324004BK/BKG KMM5324104BK/BKG DRAM MODULE KMM5324004BK/BKG & KMM5324104BK/BKG Fast Page with EDO Mode 4Mx32 DRAM SIMM, 4K & 2K Refresh GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM53240 1 04BK is a 4M bit x 32 Dynam ic RAM h gh density m em ory module. The

1CE13-10-DEC94

Abstract: HY5117400A
Contextual Info: HYM532410A M-Series 4Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532410A is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þdecoupling are mounted

Contextual Info: - « T U H D A I • HYM532414C M-Series 4MX32 bit EOO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532414C M-Series is a 4M x32-bit Extended Data Out mode CMOS DRAM m odule consisting of eight HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01uF