4MX36 Search Results

HY5117404B

Contextual Info: HYM536A814B M-Series 8Mx36 bit EDO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A814B M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of eighteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

ic 74142

Contextual Info: Preliminary KMM5364003ASW/ASWG DRAM MODULE KMM5364003ASW/ASWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003A is a 4Mx36bits Dynamic RAM ~ Part Identification high density memory module. The Samsung KMM5364003A

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5364103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364000AH Fast Page Mode 4Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364000AH is a 4M bit x 36 Dynamic RAM high density memory module. The • Performance Range:

KM416C4104AS

Abstract: KM416C4104a KM44C4005BS
Contextual Info: Preliminary KMM5364005ASW/ASWG DRAM MODULE KMM5364005ASW/ASWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005A is a 4Mx36bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5364005A

4Mx4 dram simm

Abstract: 4MX36 simm 72 pin edo
Contextual Info: 4M x 36 Bit ECC 5V EDO SIMM Extended Data Out EDO DRAM SIMM 364056ES52m09JB 72 Pin 4Mx36 EDO SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12 A0 13 A1

4Mx4 dram simm

Contextual Info: 4M x 36 Bit ECC 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 364056-S52m09JB 72 Pin 4Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description Pin # Symbol 1 Vss 2 DQ0 3 DQ18 4 DQ1 5 DQ19 6 DQ2 7 DQ20 8 DQ3 9 DQ21 10 Vcc 11 NC 12 A0 13 A1 14

KMM5364003CSW

Abstract: KMM5364003CSWG
Contextual Info: DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364003CSW/CSWG DRAM MODULE

KMM5364003BSW

Contextual Info: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B

KMM5364005BSW

Abstract: KMM5364005BSWG
Contextual Info: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS

Contextual Info: KMM5364003BK/BKG DRAM MODULE_KMM5364103BK/BKG KMM5364003BK/BKG & KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG G EN ER AL DESC RIPTIO N The Samsung KMM53640 1 03BK is a 4M bit x 36

Contextual Info: Preliminary M53640400DW0/DB0 M53640410DW0/DB0 DRAM MODULE M53640400DW0/DB0 & M53640410DW0/DB0 with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5364040 1 0D is a 4Mx36bits Dynamic RAM

Contextual Info: Preliminary M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM

HY5117400B

Abstract: HY514100A
Contextual Info: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L DES C R IPTIO N FEATURES The Samsung KMM5364100AH is a 4M bit x 36 Dynamic HAM high density memory module. The Samsung KMM5364100AH consists of nine CMOS

samsung pram

Contextual Info: PRAM MODULE / _16 Mega Byte 77 KMM5364000C/CG Fast Page Mode 4Mx36 DRAM SIMM Using 4Mx1 DRAM, 5V ^ GENERAL DESCRIPTION FEATURES The Samsung KMM5364000C is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364000C consists of thirty six CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364000AH Fast Page Mode 4Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 5364000AH is a 4M bit x 36 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The

364006EQS4G04TF

Contextual Info: 4M x 36 Bit 3.3V EDO DIMM Extended Data Out EDO DRAM DIMM 364006EQS4G04TF 100 Pin 4Mx36 EDO DIMM Unbuffered, 4k Refresh, 3.3V Pin Assignment Pin# Pin# 1 Vcc 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60 11 CAS0* 61

Contextual Info: ^ H Y U N D A I • HYM536A414C M-Series > 4Mx36 bit EOO DRAM MODULE based on 4Mx4 DRAM, with ECC, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536A414C M-Series is a 4Mx36-bit Extended Data Out mode CMOS DRAM module consisting of nine HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module The Samsung KMM53641 OOAKH consists of nine CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364100A/AG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L D ESC RIPTIO N FEATURES • Performance Range' The Sam sung K M M 5364100A is a 4M bit x 36 D ynam ic RAM high density m em ory module. The

bas 33 equivalent

Abstract: km44c4105bk EZ 720 kmm5364105bk
Contextual Info: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 53640 1 05BK is a 4M bit x 36

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364000AKH Fast Page Mode P r e lim in a r v n R a m SIMM c i m m , 4K a \c n o f r o c h c:\/ 4Mx36 DRAM Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION p r e lim in a r y FEATURES • Performance Range: The Sam sung KM M 5364000AKH is a 4M bit x 36

KM41C4000CJ

Contextual Info: DRAM MODULE 16 Mega Byte KMM5364100A1 /A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5364100A1 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100A1 consists of eight CMOS