4MX72 BIT SDRAM Search Results

72402ASEM4G19T

Contextual Info: 4M x 72 Bit PC-66 SDRAM DIMM PC-66 SYNCHRONOUS DRAM DIMM 72402ASEM4G19T 168 Pin 4Mx72 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72402ASEM4G19T is a 4Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 2Mx4x2

72403ASEM4G19T

Contextual Info: 4M x 72 Bit PC-66 SDRAM DIMM PC-66 SYNCHRONOUS DRAM DIMM 72403ASEM4G19T 168 Pin 4Mx72 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description Pin# The module is a 4Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 1Mx8x2 (TSOP)

PC-100

Abstract: PC100 1998
Contextual Info: 4M x 72 Bit PC-100 SDRAM DIMM PC-100 SYNCHRONOUS DRAM DIMM 72403sSEM4G19T 168 Pin 4Mx72 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72403sSEM4G19T is a 4Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 1Mx8x2

Contextual Info: 4M x 72 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 72408sEGM2G19TD 168 Pin 4Mx72 EDO DIMM Unbuffered, 2k Refresh, 3.3V with SPD Pin Assignment General Description The 72408sEGM2G19TD is a 4Mx72 bit, 19 chip, 3.3V, 168 Pin DIMM module consisting of (18) 2Mx8

72 pin dimm

Contextual Info: 4M x 72 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 72405sEGM2G19TD 168 Pin 4Mx72 EDO DIMM Unbuffered, 2k Refresh, 3.3V with SPD Pin Assignment General Description The 72405sEGM2G19TD is a 4Mx72 bit, 19 chip, 3.3V, 168 Pin DIMM module consisting of (18) 4Mx4

Contextual Info: 4M x 72 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 72405sEGM4G07TB 168 Pin 4Mx72 EDO DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72405sEGM4G07TB is a 4Mx72 bit, 7 chip, 3.3V, 168 Pin DIMM module consisting of (4) 4Mx16

Contextual Info: HYM7V72A400D F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V72A400D is high speed 3.3Volt synchronous dynamic RAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

Contextual Info: HYM7V72A400C F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V72A400C is high speed 3.3Volt synchronous dynamic RAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

Contextual Info: HYM7V72A400B F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V72A400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

4MX72 BIT SDRAM

Contextual Info: HYM7V72A400B K-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V72A400B is high speed 3.3Volt synchronous dynamic RAM module consisting of eighteen 4Mx4 bit Synchronous DRAMs in 44-pin SOJ or TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin

Contextual Info: • « Y U H D A I • HYM7V72A400B F-SERIES Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SORAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V72A400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPI1 and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

4MX72 BIT SDRAM

Abstract: VS47217801BTGE VS2721
Contextual Info: VS27217801BTGE,VS47217801BTGE 2M,4MX72-Bit SDRAM Module VIS Description The VS27217801BTGE and VS47217801BTGE are 2M x 72 - bit and 4M x 72 - bit dual - in - line synchronous dynamic RAM module DIMM . It is mounted with 9/18 pieces of 2M x 8 synchronous DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS27217801BTGE and

Contextual Info: » f l Y U H D A I • HYM7V72A400B K-SERIES Unbuffered 4Mx72 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V72A400B is high speed 3.3Volt synchronous dynamic RAM module consisting of eighteen 4Mx4 bit Synchronous DRAMs in 44-pin SOJ o r TSOPII and 8-pin TSSO P 2K bit EEPROM on a 168-pin

Contextual Info: KMM374S403CT PC100 SDRAM MODULE KMM374S403CT SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

hy57v16801

Contextual Info: HYM7V75A400C F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.

KMM374S403BTN-G0

Abstract: KMM374S403BTN-G2
Contextual Info: KMM374S403BTN NEW JEDEC SDRAM MODULE KMM374S403BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

samsung power module

Abstract: KMM374S400BTN-G2 ADQ37 71b4
Contextual Info: KMM374S400BTN NEW JEDEC SDRAM MODULE KMM374S400BTN SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 4Mx4, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S400BTN is a 4M bit x 72 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung

Contextual Info: - H Y U N D A I ♦ HYM7V75AR400C N-SERIES > Registered 4Mx72 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75AR400C is a high speed 3.3Volt Synchronous Dynamic RAM module consisting of eighteen 4Mx4 bit Synchronous DRAMs in TSO PII and one 8-pin T S S O P 2K bit EEPRO M on a 168-pin glass-epoxy

hy57v168010D

Abstract: 4MX72 BIT SDRAM hy57v168010
Contextual Info: HYM7V75A400D F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400D is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.

Contextual Info: 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64 72 V4200GU HYS64(72)V8220GU PC66 & PC100 168 pin unbuffered DIMM Modules • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications • One bank 4M x 64, 4Mx72 and two bank 8M x 64, 8M x 72 organisation

HY57V168

Contextual Info: »fl Y U M 0 A I * H YM 7V 75A 400C F-SER IES Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSO P 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33fiF and one 0.1 nF decoupling capacitors are mounted for each SDRAM.

CDC2509

Contextual Info: Prelim inary SDRAM MODULE KM M375S400CT KMM375S400CT SDRAM DIMM 4Mx72 SDRAM DIMM with PLL & Register based on 4Mx4, 4K Ref., 3.3V Synchronous DRAMs with SPD G E N E R A L DESCRIPTION FEATURE The Samsung KMM375S400CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

4Mx64

Abstract: 4Mx72
Contextual Info: IBM13N4649CC4M x 6411/10/1, 3.3V, Au. IBM13N4739CC4M x 7211/10/1, 3.3V, Au. IBM13N4649CC IBM13N4739CC 4M x 64/72 1 Bank Unbuffered SDRAM Module Preliminary Features • 168 Pin emerging JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 4Mx64/72 Synchronous DRAM DIMM

FW82443LX

Abstract: intel chip set agp set fw82443lx 440LX 8111G 82443LX 82433LX 4MX72 BIT SDRAM SL2KK FW82443LX
Contextual Info: R Intel 440LX AGPset: 82443LX PAC Specification Update January 2001 Notice: Intel® 440LX AGPset may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.