4MX8 Search Results

WS1M32V-XG3X

Contextual Info: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins

Contextual Info: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8

SAMSUNG MCP

Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Contextual Info: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary

WS1M32V-XG3X

Contextual Info: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins

WEDF1M32B-XXX5

Abstract: WEDF1M32B-XG2TX5 WEDF1M32B-XHX5 1m 0880
Contextual Info: White Electronic Designs WEDF1M32B-XXX5 ADVANCED* 1Mx32 5V Flash Module FEATURES Access Times of 70, 90, 120ns Packaging: Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. • 66 pin, PGA Type, 1.185” square, Hermetic Ceramic HIP Package 401 Commercial, Industrial and Military Temperature

mask rom

Contextual Info: KM23V32005D E TY/KM23S32005D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V/3.0V Operation : 100/30ns(Max.)

Contextual Info: KM23V32000D E TY/KM23S32000D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)

Contextual Info: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption

Contextual Info: K3N6V U 1000D-YC(E)/K3N6S1000D-YC(E) CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)

Contextual Info: K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1

Contextual Info: K3P6V1000B-GC CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time : 100ns(Max.) Page Access Time : 30ns(Max.) • 8 words / 16 bytes page access

K7R323682M-FC20

Abstract: K7R320982M-FC20
Contextual Info: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001

Contextual Info: KM23C32005BT CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 8 words/ 16 bytes page access

MCM84000AS60

Contextual Info: MOTOROLA SC M E H O R Y / A S I C M OTOROLA h S 1E ]> b3b7251 0003571 175 SEM ICO ND U C TO R • ■ TECHNICAL DATA MCM84000A MCM8L4000A Advance Information 4Mx8 Bit Dynamic Random A ccess Memory Module The M C M 8 4 0 0 0 A S is a 32M, dynam ic random a cc e ss memory (DRAM )

9CTI

Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Contextual Info: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: K7J323682M K7J321882M K7J320882M Preliminary 1Mx36 & 2Mx18 & 4Mx8 DDR II SIO b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. July, 15 200 1 Advance 0.1 1. 2. 3. 4.

Contextual Info: m i EDI784MSV-RP 4Megx8 Ruggedized Plastic NAND Flash ELECT R O N IC DESlÊN S. IN C 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304)x8 bit Ruggedized Plastic NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high

23C32000

Abstract: 23C32000CT 23c3200
Contextual Info: KM23C32000C E T_ CMOS MASK ROM 32M-Bit (4Mx8 2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V

Contextual Info: KM23V32005B E T CMOS MASK ROM 32M-Bit (4Mx8 2Mx16) CMOS MASK ROM FEATURES G E N E R A L D E S C R I P T IO N • Switchable organization 4,194,304 x 8(byte mode) 2,097,152 x 16(word mode) • Fast access time Random Access Tim e : 100ns(M ax.) Page Access Tim e

i2101

Contextual Info: KM23C32101C CMOS MASK ROM 32M-Bit 4Mx8 CMOS MASK ROM FEATURES G E N E R A L D E S C R IP T IO N • 4,194,304 x 8 bit organization • Fast a c c e ss time : 1Q0ns(Max.) • Supply voltage : single + 5 V • Current consumption The K M 2 3 C 3 2 1 01 C is a fully static m ask programmable R O M

4Mx8 dram simm

Contextual Info: DRAM MODULE 4 Mega Byte KMM5841OOAKN Fast Page Mode 4Mx8 DRAM SIMM , 2K Refresh ,5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KMM5841 OOAKN is a 4M bit x 8 I P r e lim in â r y FEATURES • Performance Range: Dynam ic RAM high density m em ory module. The

Contextual Info: Preliminary KM23V32000B E TY/KM23S32000B(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch ab le organ izatio n 4 ,1 9 4 ,3 0 4 x 8(b yte m ode) 2,0 97,152 x 16(w ord m ode) Fast access tim e Random A ccess T im e

Contextual Info: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time ; 100ns(Max.) • Supply voltage : single +5V • Current consumption

Contextual Info: KM23C32120C CMOS MASK ROM 32M-Bit (4Mx8 CM OS M ASK ROM FEATURES G E N E R A L DESC R IPT IO N • • • • The KM23C32120C is a lully static mask programmable R O M organized 4,194,304 x 8 bit. It is fabricated using slllcon-gate C M O S process technology.