4MX9 DRAM 30-PIN SIMM Search Results

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C

Contextual Info: SMART SM536084002P3UU Modular Technologies December 13, 1996 32MByte 8M x 36 DRAM Module - 4Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM

Contextual Info: SMART SM57204400UPUGU Modular Technologies September 23, 1997 32MByte 4M x 72 DRAM Module - 4Mx4 based 168-pin DIMM, Buffered, Parity Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 50/60/70ns

Contextual Info: SMART SM536044002PUUU Modular Technologies March 17, 1998 16MByte 4M x 36 DRAM Module - 4Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM Operating Voltage :

FPM DRAM 30-pin SIMM

Abstract: 4MX9 4Mx9 DRAM 30-pin SIMM
Contextual Info: CELESTICA,. 4M x 9 PTY FPM SIMM 4MB FPM ORAM SIMM FEATURES 30-pin industry standard 1-byte single-in-line memory module JEDEC compliant: No 95: M0-064, No 21 -C: 4.2-1 Supports 22.5°, 40° and 90° connector High performance, CMOS Single 5.0 ± 10% power supply

LG 2MX32 EDO simm module

Abstract: GMM732201 GMM732411OCNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32

m7401

Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6

GMM732411

Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6

41C4000CJ

Contextual Info: DRAM MODULE KMM594100AKN Fast Page Mode 4 Mega Byte Preliminary \ 4Mx9 DRAM SIMM , 2K Refresh , 5 V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AKN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AKN consists of two CMOS

KMM594100AN

Abstract: 44C4100 KMM5941 O1040 4Mx1 44C4100AJ
Contextual Info: DRAM MODULE / 4 Mega Byte KMM594100AN Fast Page Mode 4Mx9 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM594100AN is a 4M bit x 9 Dynamic RAM high density memory module. The Samsung KMM594100AN consists of two CMOS

km41c4000cj

Abstract: ka5 capacitor
Contextual Info: DRAM MODULE 4 Mega Byte KMM594000C1 Fast Page Mode 4Mx9 DRAM SIMM , 1K Refresh , 5V G E N E R A L DESCRIPTIO N FEATURES The Samsung KMM594000C1 is a 4M bit x 9 Dynamic RAM high density memory module. The • Performance Range: Samsung KMM594000C1 consists of nine CMOS

MB811

Contextual Info: July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B supports 2K refresh.

Contextual Info: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet FSA4UN364 2/4 B-60J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)B-60J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644B supports 4K refresh. FSA4UN3642B sup­

Contextual Info: November 1996 Revision 1.1 FUJITSU DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642

Contextual Info: June1996 Revision 1.0 FUJITSU DATA S H E E T FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

MB811

Contextual Info: May1996 Revision 1.0 DATA SHEET DM4M 4/2 N360-(60/70)JG-IS 16MByte (4M x 36) CMOS DRAM Module General Description The DM4M(4/2)N360-(60/70)JG-IS is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360 supports

pj 996

Abstract: Fujitsu IR c code
Contextual Info: <p Jun e l 996 Revision 1.0 HATA fíH F F T - FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. DM4M4N360 supports 4K refresh. DM4M2N360

MB811

Abstract: TPC 8608
Contextual Info: November 1996 Revision 1.1 DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642

MCM91430

Abstract: Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 1mx1 DRAM DIP MCM511000A mcm511000 1K x4 static ram application note Motorola CMOS Dynamic RAM 16m x 32 TSOP 400 86 MCM69F536B
Contextual Info: Memory Products In Brief . . . Motorola’s memory product portfolio has been expanded to support a broad range of engineering applications. Included in this portfolio are asynchronous devices with access times of 6 ns at 256K–bit density, 6 ns at 5 V 1

Contextual Info: SM5364400 August 1994 Rev 1 SMART Modular Technologies SM5364400 16MByte 4M x 36 CMOS DRAM Module General Description Features The SM5364400 is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36 bits, in a 72-pin, leadless, single-in-line memory module

Contextual Info: SM5364000 June 1994 Rev 2 SMART Modular Technologies SM5364000 16MByte 4M x 36 CMOS DRAM Module (2K Refresh) General Description Features The SM5364000 is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36 bits, in a 72-pin, leadless, single-in-line memory module

MCM94000AS70

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA MCM94000A MCM9L4000A Advance Information 4Mx9 Bit Dynamic Random Access Memory Module The MCM94000AS is a 36M, dynamic random access memory DRAM module organized as 4,194,304 x 9 bits. The module is a 30-lead single-in-line memory

MCM94000AS70

Contextual Info: MOTOROLA SC MEMORY/ASIC SIE » b3tj72Sl aafl3t,31 4 7 T M O TO R O LA •ü SEM ICO NDUCTO R v(g TEC H N IC A L DATA MCM94000A MCM9L4000A Advance Information 4Mx9 Bit Dynamic Random Access Memory Module The MCM94000AS is a 36M, dynam ic random access memory (DRAM) module